公开(公告)号：US11923327B2

公开(公告)日：2024-03-05

申请号：US17596252

申请日：2020-06-05

申请人： ROCKLEY PHOTONICS LIMITED

发明人： Michael Lee ,  John Paul Drake ,  Ying Luo ,  Vivek Raghunathan ,  Brett Sawyer

IPC分类号： H01L23/00 ,  H01L25/16

CPC分类号： H01L24/06 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L25/167 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/02375 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/03462 ,  H01L2224/03614 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05015 ,  H01L2224/05018 ,  H01L2224/05024 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05172 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05548 ,  H01L2224/05555 ,  H01L2224/05558 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/06051 ,  H01L2224/061 ,  H01L2224/06102 ,  H01L2224/06505 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204

摘要： A silicon integrated circuit. In some embodiments, the silicon integrated circuit includes a first conductive trace, on a top surface of the silicon integrated circuit, a dielectric layer, on the first conductive trace, and a second conductive trace, on the dielectric layer, connected to the first conductive trace through a first via.