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    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220278072A1

    公开(公告)日：2022-09-01

    申请号：US17751239

    申请日：2022-05-23

    申请人： ROHM CO., LTD.

    发明人： Akihiro Kimura ,  Takeshi Sunaga

    IPC分类号： H01L23/00 ,  H01L21/56 ,  H01L23/495 ,  H01L23/31 ,  H01L25/065 ,  H01L23/29 ,  H01L21/52

    摘要： A semiconductor device is provided with a semiconductor element having a plurality of electrodes, a plurality of terminals electrically connected to the plurality of electrodes, and a sealing resin covering the semiconductor element. The sealing resin covers the plurality of terminals such that a bottom surface of the semiconductor element in a thickness direction is exposed. A first terminal, which is one of the plurality of terminals, is disposed in a position that overlaps a first electrode, which is one of the plurality of electrodes, when viewed in the thickness direction. The semiconductor device is provided with a conductive connection member that contacts both the first terminal and the first electrode.

    Semiconductor module
    2.
    外观设计
    Semiconductor module 有权

    公开(公告)号：USD1012048S1

    公开(公告)日：2024-01-23

    申请号：US29807874

    申请日：2021-09-15

    申请人： ROHM CO., LTD.

    设计人： Yoshihisa Tsukamoto ,  Akihiro Kimura ,  Masaaki Matsuo

    摘要： FIG. 1 is a front, top and right side perspective view of a semiconductor module showing our new design;
    FIG. 2 is a rear, bottom and left side perspective view thereof;
    FIG. 3 is a front view thereof, the rear view being a mirror image of FIG. 3;
    FIG. 4 is a top plan view thereof;
    FIG. 5 is a bottom plan view thereof;
    FIG. 6 is a right side view thereof;
    FIG. 7 is a left side view thereof;
    FIG. 8 is a cross-sectional view taken along line 8-8 in FIG. 5 thereof;
    FIG. 9 is a cross-sectional view taken along line 9-9 in FIG. 5 thereof;
    FIG. 10 is a cross-sectional view taken along line 10-10 in FIG. 5 thereof; and,
    FIG. 11 is a cross-sectional view taken along line 11-11 in FIG. 5 thereof.

    Semiconductor device and method for manufacturing semiconductor device
    3.
    发明授权
    Semiconductor device and method for manufacturing semiconductor device 有权

    公开(公告)号：US10707185B2

    公开(公告)日：2020-07-07

    申请号：US16669066

    申请日：2019-10-30

    申请人： ROHM CO., LTD.

    发明人： Akihiro Kimura ,  Takeshi Sunaga

    IPC分类号： H01L21/00 ,  H01L23/00 ,  H01L21/56 ,  H01L23/495 ,  H01L23/31 ,  H01L25/065 ,  H01L23/29 ,  H01L21/52

    摘要： A semiconductor device is provided with a semiconductor element having a plurality of electrodes, a plurality of terminals electrically connected to the plurality of electrodes, and a sealing resin covering the semiconductor element. The sealing resin covers the plurality of terminals such that a bottom surface of the semiconductor element in a thickness direction is exposed. A first terminal, which is one of the plurality of terminals, is disposed in a position that overlaps a first electrode, which is one of the plurality of electrodes, when viewed in the thickness direction. The semiconductor device is provided with a conductive connection member that contacts both the first terminal and the first electrode.

    Semiconductor device, semiconductor device manufacturing method and semiconductor device mounting structure
    5.
    发明授权
    Semiconductor device, semiconductor device manufacturing method and semiconductor device mounting structure 有权

    公开(公告)号：US10163760B2

    公开(公告)日：2018-12-25

    申请号：US15866825

    申请日：2018-01-10

    申请人： ROHM CO., LTD.

    发明人： Akihiro Kimura

    IPC分类号： H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L23/29 ,  H01L23/31 ,  H01L23/373 ,  H01L23/433 ,  H01L27/02 ,  H01L23/00

    摘要： A semiconductor device includes a plurality of die pad sections, a plurality of semiconductor chips, each of which is arranged in each of the die pad sections, a resin encapsulation portion having a recess portion for exposing at least a portion of the die pad sections, the resin encapsulation portion configured to cover the die pad sections and the semiconductor chips, and a heat radiation layer arranged in the recess portion. The heat radiation layer includes an elastic layer exposed toward a direction in which the recess portion is opened. The heat radiation layer directly faces at least a portion of the die pad sections. The elastic layer overlaps with at least a portion of the die pad sections when seen in a thickness direction of the heat radiation layer.

    Semiconductor device
    6.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US12100688B2

    公开(公告)日：2024-09-24

    申请号：US17607346

    申请日：2020-05-12

    申请人： ROHM CO., LTD.

    发明人： Kaito Inoue ,  Akihiro Kimura

    IPC分类号： H01L25/07 ,  H01L23/00 ,  H01L23/373 ,  H01L23/492

    CPC分类号： H01L25/072 ,  H01L23/3735 ,  H01L23/4924 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/18165

    摘要： The semiconductor device A1 includes a support member 2, a metal part 30 having obverse and reverse surfaces 301-302 spaced in z direction, with the reverse surface 302 bonded to the support member 2, a second bonding layer 42 boding the support member 2 and the metal part 30, a semiconductor element 10 facing the obverse surface 301 and bonded to the metal part 30, and a sealing member 7 covering the support member 2, metal part 30, second bonding layer 42 and semiconductor element 10. The metal part 30 includes a first body 31 of a first material and a second body 32 of a second material, with a boundary between the bodies 31-32. The second material has a linear thermal expansion coefficient smaller than that of the first material. The semiconductor device is improved in reliability by reducing thermal stress from heat generation of the semiconductor element.

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    8.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200321308A1

    公开(公告)日：2020-10-08

    申请号：US16904167

    申请日：2020-06-17

    申请人： ROHM CO., LTD.

    发明人： Akihiro Kimura ,  Takeshi Sunaga

    IPC分类号： H01L23/00 ,  H01L21/56 ,  H01L23/495 ,  H01L23/31 ,  H01L25/065 ,  H01L23/29 ,  H01L21/52

    摘要： A semiconductor device is provided with a semiconductor element having a plurality of electrodes, a plurality of terminals electrically connected to the plurality of electrodes, and a sealing resin covering the semiconductor element. The sealing resin covers the plurality of terminals such that a bottom surface of the semiconductor element in a thickness direction is exposed. A first terminal, which is one of the plurality of terminals, is disposed in a position that overlaps a first electrode, which is one of the plurality of electrodes, when viewed in the thickness direction. The semiconductor device is provided with a conductive connection member that contacts both the first terminal and the first electrode.

    Semiconductor device
    9.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10679927B2

    公开(公告)日：2020-06-09

    申请号：US16185478

    申请日：2018-11-09

    申请人： ROHM CO., LTD.

    发明人： Akihiro Kimura

    IPC分类号： H01L23/495 ,  H01L23/433 ,  H01L23/31 ,  H01L23/373 ,  H01L21/48 ,  H01L21/56 ,  H01L23/29 ,  H01L27/02 ,  H01L23/00

    摘要： A semiconductor device includes a plurality of die pad sections, a plurality of semiconductor chips, each of which is arranged in each of the die pad sections, a resin encapsulation portion having a recess portion for exposing at least a portion of the die pad sections, the resin encapsulation portion configured to cover the die pad sections and the semiconductor chips, and a heat radiation layer arranged in the recess portion. The heat radiation layer includes an elastic layer exposed toward a direction in which the recess portion is opened. The heat radiation layer directly faces at least a portion of the die pad sections. The elastic layer overlaps with at least a portion of the die pad sections when seen in a thickness direction of the heat radiation layer.