公开(公告)号：US20240014267A1

公开(公告)日：2024-01-11

申请号：US18472320

申请日：2023-09-22

申请人： ROHM CO., LTD.

发明人： Takayuki OSAWA

IPC分类号： H01L29/06 ,  H01L29/739

CPC分类号： H01L29/0696 ,  H01L29/7393

摘要： A semiconductor device comprises: a cell region and a peripheral region. The cell region includes an insulation film covering cells, and an electrode portion including a stacked part stacked on the insulation film. The peripheral region includes a first semiconductor layer of a first conductive type, a second semiconductor region of a second conductivity type, a peripheral insulation film, a peripheral electrode portion, a barrier layer, and a passivation film. The barrier layer covers both the peripheral insulation film and the peripheral electrode portion and has a smaller diffusion coefficient than the peripheral insulation film. The passivation film stacks on the barrier layer and has a larger diffusion coefficient than the barrier layer. The peripheral electrode portion includes a projection. A thickness of the projection is less than a thickness of the stacked part.

公开(公告)号：US20240014300A1

公开(公告)日：2024-01-11

申请号：US18471336

申请日：2023-09-21

申请人： ROHM CO., LTD.

发明人： Takayuki OSAWA

IPC分类号： H01L29/739 ,  H01L29/06 ,  H01L29/66

CPC分类号： H01L29/7397 ,  H01L29/0623 ,  H01L29/66348

摘要： This semiconductor device comprises an active region and an outer peripheral region. The active region has a first-electroconductivity-type drift layer and a second-electroconductivity-type body layer. The active region has a main cell region having a main cell, a first insulating film covering the main cell, a first electrode part stacked on the first insulating film, a sense cell region having a sense cell, a second insulating film covering the sense cell, and a second electrode part stacked on the second insulating film. Between the main cell region and the sense cell region, there is formed a second-electroconductivity-type well region. The first electrode part and the second electrode part are electrically connected by the well region.

公开(公告)号：US20230420454A1

公开(公告)日：2023-12-28

申请号：US18465997

申请日：2023-09-13

申请人： ROHM CO., LTD.

发明人： Takayuki OSAWA

IPC分类号： H01L27/06 ,  H01L29/739 ,  H01L29/861 ,  H01L29/06

CPC分类号： H01L27/0664 ,  H01L29/7395 ,  H01L29/8611 ,  H01L29/0684 ,  H01L29/7804

摘要： This semiconductor device is provided with: a semiconductor layer; an insulating film which is formed on the surface of the semiconductor layer; a main cell region which comprises a main cell, while being provided in the semiconductor layer; and a temperature-sensing diode for sensing the temperature, the diode being provided in a region other than the main cell region. The temperature-sensing diode comprises a diode cell which is composed of: a first semiconductor region of a first conductivity type; and a second semiconductor region of a second conductivity type. The second semiconductor region is formed into a ring shape so as to surround the first semiconductor region. The inner lateral surface of the second semiconductor region is joined with the first semiconductor region.

公开(公告)号：US20240006357A1

公开(公告)日：2024-01-04

申请号：US18465994

申请日：2023-09-13

申请人： ROHM CO., LTD.

发明人： Takayuki OSAWA

IPC分类号： H01L23/00 ,  H01L27/06 ,  H01L23/29

CPC分类号： H01L24/06 ,  H01L2924/10272 ,  H01L24/37 ,  H01L24/45 ,  H01L24/73 ,  H01L23/293 ,  H01L2224/0601 ,  H01L2224/061 ,  H01L2224/3702 ,  H01L2224/4502 ,  H01L2224/73101 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/12036 ,  H01L27/0629

摘要： This semiconductor device is provided with: a semiconductor layer; a cell that is provided on the semiconductor layer; an insulating film that covers the cell; a main electrode part that is superposed on the insulating film; a temperature-sensitive diode for sensing temperatures, the diode having a first electrode and a second electrode; and a connection electrode for diode, the connection electrode being used for the purpose of connecting the first electrode to the outside. The main electrode part has: a first bonding region to which a first conductive member is bonded; and a second bonding region to which a second conductive member is bonded. When viewed from the thickness direction of the semiconductor layer, the cell is provided on both a first semiconductor region in the semiconductor layer, and a second semiconductor region in the semiconductor layer.

公开(公告)号：US20230420324A1

公开(公告)日：2023-12-28

申请号：US18465192

申请日：2023-09-12

申请人： ROHM CO., LTD.

发明人： Takayuki OSAWA ,  Takeshi OKAMOTO

IPC分类号： H01L23/31 ,  H01L29/06 ,  H01L29/40 ,  H01L29/417 ,  H01L29/739 ,  H01L21/02 ,  H01L21/311 ,  H01L29/66

CPC分类号： H01L23/3192 ,  H01L23/3171 ,  H01L29/0623 ,  H01L29/402 ,  H01L29/41708 ,  H01L29/7397 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L29/6634 ,  H01L29/66348

摘要： An outer peripheral region of this semiconductor device comprises: a guard ring; an insulating film and an intermediate insulating film that cover a surface of the guard ring; a field plate; a passivation film provided so as to cover both the insulating film and the field plate; and a barrier layer that has a smaller diffusion coefficient than the insulating film and the intermediate insulating film, and than the passivation film. The field plate includes a first section provided within an opening in the insulating film and the intermediate insulating film, and a second section having a protrusion that protrudes outward beyond the first section. The barrier layer has a section that is inserted between the protrusion and the guard ring.