公开(公告)号：US20170213937A1

公开(公告)日：2017-07-27

申请号：US15426662

申请日：2017-02-07

申请人： Thomas M. Katona ,  James W. Raring ,  Mark P. D'Evelyn ,  Michael R. Krames ,  Aurelien J.F. David

发明人： Thomas M. Katona ,  James W. Raring ,  Mark P. D'Evelyn ,  Michael R. Krames ,  Aurelien J.F. David

IPC分类号： H01L33/20 ,  H05B33/08 ,  H01L33/00 ,  H01L33/16 ,  H01L33/32

CPC分类号： H01L33/20 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01L33/405 ,  H05B33/0842

摘要： A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.

公开(公告)号：US09768353B2

公开(公告)日：2017-09-19

申请号：US15426662

申请日：2017-02-07

申请人： Thomas M. Katona ,  James W. Raring ,  Mark P. D'Evelyn ,  Michael R. Krames ,  Aurelein J. F. David

发明人： Thomas M. Katona ,  James W. Raring ,  Mark P. D'Evelyn ,  Michael R. Krames ,  Aurelein J. F. David

IPC分类号： H05B37/02 ,  H01L29/22 ,  H01L33/20 ,  H01L33/16 ,  H01L33/32 ,  H01L33/00 ,  H05B33/08

CPC分类号： H01L33/20 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01L33/405 ,  H05B33/0842

摘要： A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.

公开(公告)号：US08502465B2

公开(公告)日：2013-08-06

申请号：US12936238

申请日：2010-09-20

申请人： Thomas M. Katona ,  James W. Raring ,  Mark P. D'Evelyn ,  Michael R. Krames

发明人： Thomas M. Katona ,  James W. Raring ,  Mark P. D'Evelyn ,  Michael R. Krames

IPC分类号： H05B37/02 ,  H01L29/22

CPC分类号： H05B37/02 ,  H01L33/16 ,  H01L33/32 ,  H01L33/405 ,  H01L2224/16 ,  H01L2224/48

摘要： A light emitting diode device emitting at a wavelength of 390-415 nm has a bulk gallium and nitrogen containing substrate with an active region. The device has a current density of greater than about 175 Amps/cm2 and an external quantum efficiency with a roll off of less than about 5% absolute efficiency.

摘要翻译： 发射波长为390-415nm的发光二极管器件具有具有活性区域的大量含镓和氮的衬底。 该器件的电流密度大于约175安培/厘米2，外部量子效率具有小于约5％的绝对效率。

公开(公告)号：US20110279054A1

公开(公告)日：2011-11-17

申请号：US12936238

申请日：2010-09-20

申请人： Thomas M. Katona ,  James W. Raring

发明人： Thomas M. Katona ,  James W. Raring

IPC分类号： H05B37/02 ,  H01L33/00 ,  H01L33/50

CPC分类号： H05B37/02 ,  H01L33/16 ,  H01L33/32 ,  H01L33/405 ,  H01L2224/16 ,  H01L2224/48

摘要： A light emitting diode device emitting at a wavelength of 390-415 nm has a bulk gallium and nitrogen containing substrate with an active region. The device has a current density of greater than about 175 Amps/cm2 and an external quantum efficiency with a roll off of less than about 5% absolute efficiency.

摘要翻译： 发射波长为390-415nm的发光二极管器件具有具有活性区域的大量含镓和氮的衬底。 该器件的电流密度大于约175安培/厘米2，外部量子效率具有小于约5％的绝对效率。

公开(公告)号：US20110309373A1

公开(公告)日：2011-12-22

申请号：US13163498

申请日：2011-06-17

申请人： Rajat Sharma ,  Thomas M. Katona ,  Andrew Felker

发明人： Rajat Sharma ,  Thomas M. Katona ,  Andrew Felker

IPC分类号： H01L33/02

CPC分类号： H01L33/0095

摘要： A method for singulation of thick GaN wafers (e.g., 300-400 um) through the use of a double-side laser-scribe process. In a preferred embodiment, the patterned GaN substrate is processed using a laser-scribe on each side of the substrate to form scribe lines. The scribe lines are aligned to each other. In a preferred embodiment, the substrate has not been subjected to a thinning or polishing process for reducing its thickness.

摘要翻译： 通过使用双面激光刻划工艺对粗GaN晶片（例如，300-400μm）进行单片化的方法。 在优选实施例中，使用激光刻划在基板的每一侧上处理图案化的GaN衬底，以形成刻划线。 划线相互对准。 在一个优选的实施方式中，基片未经过减薄或抛光工艺以减小其厚度。

公开(公告)号：US08153475B1

公开(公告)日：2012-04-10

申请号：US12858379

申请日：2010-08-17

申请人： Frank Tin Chung Shum ,  Thomas M. Katona ,  Michael Ragan Krames

发明人： Frank Tin Chung Shum ,  Thomas M. Katona ,  Michael Ragan Krames

IPC分类号： H01L21/44 ,  H01L21/48

CPC分类号： H01L21/6835 ,  H01L21/02032 ,  H01L21/6836 ,  H01L33/0079 ,  H01L2221/6835 ,  H01L2221/68368 ,  H01L2221/68381

摘要： A method for fabricating optical devices on a reusable handle substrate. The method includes providing a handle substrate having a surface region. The method also includes forming a plurality of optical device using at least an epitaxial growth process overlying the surface region and then releasing the handle substrate from the plurality of optical devices. The method reuses the handle substrate for another fabrication process.

摘要翻译： 一种用于在可重复使用的手柄基板上制造光学器件的方法。 该方法包括提供具有表面区域的手柄基板。 该方法还包括使用覆盖表面区域的至少外延生长工艺形成多个光学器件，然后从多个光学器件释放手柄衬底。 该方法重新使用另一制造工艺的手柄基板。

公开(公告)号：US08313964B2

公开(公告)日：2012-11-20

申请号：US13163498

申请日：2011-06-17

申请人： Rajat Sharma ,  Thomas M. Katona ,  Andrew Felker

发明人： Rajat Sharma ,  Thomas M. Katona ,  Andrew Felker

IPC分类号： H01L21/00

CPC分类号： H01L33/0095

摘要： A method for singulation of thick GaN wafers (e.g., 300-400 um) through the use of a double-side laser-scribe process. In a preferred embodiment, the patterned GaN substrate is processed using a laser-scribe on each side of the substrate to form scribe lines. The scribe lines are aligned to each other. In a preferred embodiment, the substrate has not been subjected to a thinning or polishing process for reducing its thickness.

摘要翻译： 通过使用双面激光刻划工艺对粗GaN晶片（例如，300-400μm）进行单片化的方法。 在优选实施例中，使用激光刻划在基板的每一侧上处理图案化的GaN衬底，以形成刻划线。 划线相互对准。 在一个优选的实施方式中，基片未经过减薄或抛光工艺以减小其厚度。