Distributed bragg reflector for optoelectronic device
    1.
    发明申请
    Distributed bragg reflector for optoelectronic device 有权
    光电器件分布式布拉格反射器

    公开(公告)号:US20050190812A1

    公开(公告)日:2005-09-01

    申请号:US11119292

    申请日:2005-04-29

    IPC分类号: H01S5/183 H01S5/42 H01S3/08

    摘要: This disclosure concerns devices such as DBRs, one example of which includes at least one first mirror layers having an oxidized region extending from an edge of the DBR to an oxide termination edge that is situated greater than a first distance from the edge of the DBR. The DBR also includes at least one second mirror layer having an oxidized region extending from the edge of the DBR to an oxide termination edge that is situated less than a second distance from the edge of the DBR, such that the first distance is greater than the second distance. Additionally, a first mirror layer includes an oxidizable material at a concentration that is higher than the concentration of the oxidizable material in any of the second mirror layers. Finally, a first mirror layer is doped with an impurity at a higher level than one of the second mirror layers.

    摘要翻译: 本公开涉及诸如DBR的设备,其一个示例包括至少一个第一镜像层,其具有从DBR的边缘延伸到距离DBR的边缘大于第一距离的氧化物终止边缘的氧化区域。 DBR还包括至少一个第二镜层,其具有从DBR的边缘延伸到氧化物终止边缘的氧化区域,该氧化物终止边缘距离DBR的边缘小于第二距离,使得第一距离大于 第二距离。 此外,第一镜层包括浓度高于任何第二镜层中的可氧化材料的浓度的可氧化材料。 最后,第一镜层掺杂有比第二镜层中的一个更高的杂质。

    LIGHT EMITTING SEMICONDUCTOR DEVICE HAVING AN ELECTRICAL CONFINEMENT BARRIER NEAR THE ACTIVE REGION
    2.
    发明申请
    LIGHT EMITTING SEMICONDUCTOR DEVICE HAVING AN ELECTRICAL CONFINEMENT BARRIER NEAR THE ACTIVE REGION 有权
    具有活动区域附近的电气限制障碍物的发光半导体器件

    公开(公告)号:US20060268954A1

    公开(公告)日:2006-11-30

    申请号:US11461353

    申请日:2006-07-31

    IPC分类号: H01S5/00

    摘要: Light emitting semiconductor devices such as VCSELs, SELs, and LEDs are manufactured to have a thin electrical confinement barrier in a confining layer near the active region of the device. The thin confinement barrier comprises a III-V semiconductor material having a high aluminum content (e.g. 80%-100% of the type III material). The aluminum content of the adjacent spacer layer is lower than that of the confinement barrier. In one embodiment the spacer layer has an aluminum content of less than 40% and a direct bandgap. The aluminum profile reduces series resistance and improves the efficiency of the semiconductor device.

    摘要翻译: 制造诸如VCSEL,SEL和LED的发光半导体器件在靠近器件的有源区域的约束层中具有薄的电限制屏障。 薄限制屏障包括具有高铝含量(例如III型材料的80%-100%)的III-V半导体材料。 相邻间隔层的铝含量低于限制屏障的铝含量。 在一个实施方案中,间隔层具有小于40%的铝含量和直接的带隙。 铝型材降低了串联电阻并提高了半导体器件的效率。

    Surface gratings on VCSELs for polarization pinning
    3.
    发明申请
    Surface gratings on VCSELs for polarization pinning 有权
    VCSEL上的表面光栅用于极化锁定

    公开(公告)号:US20060239325A1

    公开(公告)日:2006-10-26

    申请号:US11299638

    申请日:2005-12-12

    IPC分类号: H01S3/08 H01S5/00

    摘要: A polarization pinned vertical cavity surface emitting laser (VCSEL). A VCSEL designed to be polarization pinned includes an upper mirror. An active region is connected on the upper mirror. A lower mirror is connected to the active region. A grating layer is deposited to the upper mirror. The grating layer includes a low index of refraction layer formed by deposition on the upper mirror. The grating layer further includes a high index of refraction layer formed by deposition on the low index of refraction layer. A grating is formed into the grating layer.

    摘要翻译: 偏振锁定垂直腔表面发射激光器(VCSEL)。 被设计为偏振锁定的VCSEL包括上镜。 有源区连接在上镜上。 下反射镜连接到活动区域。 光栅层沉积到上镜。 光栅层包括通过沉积在上反射镜上形成的低折射率折射率层。 光栅层还包括通过沉积在低折射率折射率层上形成的高折射率折射率层。 格栅形成光栅层。

    INTEGRATED LIGHT EMITTING DEVICE AND PHOTODIODE WITH OHMIC CONTACT
    4.
    发明申请
    INTEGRATED LIGHT EMITTING DEVICE AND PHOTODIODE WITH OHMIC CONTACT 有权
    集成式发光装置和光电接头

    公开(公告)号:US20070264805A1

    公开(公告)日:2007-11-15

    申请号:US11778603

    申请日:2007-07-16

    IPC分类号: H01L21/20

    摘要: Optoelectronic device including integrated light emitting device and photodiode. The optoelectronic device includes a light emitting device such as a vertical cavity surface emitting laser (VCSEL) or resonant cavity light emitting diode (RCLED). A photodiode is also included in the optoelectronic device. Between the light emitting device and the photodiode is a transition region. At least part of the transition region is shorted. A metal contact provides a contact to both the light emitting device and the photodiode.

    摘要翻译: 光电器件包括集成发光器件和光电二极管。 光电子器件包括诸如垂直腔表面发射激光器(VCSEL)或谐振腔发光二极管(RCLED)的发光器件。 光电二极管也包括在光电器件中。 在发光器件和光电二极管之间是过渡区域。 至少部分过渡区域短路。 金属触点提供与发光器件和光电二极管的接触。

    Photo-imaged stress management layer for semiconductor devices
    5.
    发明授权
    Photo-imaged stress management layer for semiconductor devices 有权
    用于半导体器件的光成像应力管理层

    公开(公告)号:US07232692B2

    公开(公告)日:2007-06-19

    申请号:US11071940

    申请日:2005-03-04

    IPC分类号: H01L21/00

    摘要: A photo-imaged stress management layer for a semiconductor device is described. The stress management layer is located on an outer surface of a semiconductor device and may be patterned to address certain stress compensation requirements of the semiconductor device. The stress management layer may be manufactured onto the semiconductor device using a photolithographic procedure that allows both simple and complex patterns to be realized.

    摘要翻译: 描述了用于半导体器件的光成像应力管理层。 应力管理层位于半导体器件的外表面上并且可以被图案化以解决半导体器件的某些应力补偿要求。 应力管理层可以使用允许简单和复杂图案实现的光刻过程在半导体器件上制造。

    LASER DRIVERS FOR CLOSED PATH OPTICAL CABLES
    6.
    发明申请
    LASER DRIVERS FOR CLOSED PATH OPTICAL CABLES 有权
    激光驱动器关闭路径光纤

    公开(公告)号:US20070058976A1

    公开(公告)日:2007-03-15

    申请号:US11470623

    申请日:2006-09-06

    IPC分类号: H04J14/08

    摘要: Simplified laser drivers for closed path digital optical cables and digital optical cables including the simplified laser drivers. The laser driver can include less transistors than conventional laser drivers for optical communication cables. The laser can include a bias source and modulation source. The bias source can have a single constant current bias point for all laser diodes. The modulation current source can have a single temperature coefficient for all laser diodes. The laser driver can exclude, for example, any one of or combination of temperature compensation of the modulation or bias current sources, external programming of the modulation or bias current sources, power control based on output of the laser diode, and/or control based on feedback received from a monitor device or other sensor within the cables.

    摘要翻译: 用于闭路数字光缆和数字光缆的简化激光驱动器,包括简化的激光驱动器。 激光驱动器可以包括比用于光通信电缆的传统激光驱动器更少的晶体管。 激光器可以包括偏置源和调制源。 偏置源可以为所有激光二极管提供单个恒定电流偏置点。 调制电流源可以具有所有激光二极管的单一温度系数。 激光驱动器可以例如排除调制或偏置电流源的温度补偿中的任何一种或组合,调制或偏置电流源的外部编程,基于激光二极管的输出的功率控制和/或基于 在来自监视器装置或电缆内的其他传感器的反馈。

    Attenuated barrel selection algorithms
    7.
    发明申请
    Attenuated barrel selection algorithms 有权
    衰减桶选择算法

    公开(公告)号:US20060263014A1

    公开(公告)日:2006-11-23

    申请号:US11130511

    申请日:2005-05-17

    IPC分类号: G02B6/36

    CPC分类号: G02B6/4204

    摘要: The present invention relates to controlling parameters of an optical output of an optical transmitter. An optical package can be selected based on a level of attenuation of a parameter of a transmitter output by the optical package. The laser and the optical package can be assembled and a parameter of the transmitter output can be measured. An optical barrel can be selected based on the measurement, wherein the optical barrel is selected based on an attenuation level to satisfy a range of a desired parameter value. The optical package and the optical barrel can be assembled. A system for assembling the optical device is also described.

    摘要翻译: 本发明涉及控制光发射机的光输出的参数。 可以基于由光学封装输出的发射器的参数的衰减水平来选择光学封装。 可以组装激光器和光学封装,并且可以测量发射器输出的参数。 可以基于测量来选择光学镜筒,其中基于衰减水平来选择光学镜筒以满足期望的参数值的范围。 可以组装光学封装和光学镜筒。 还描述了用于组装光学装置的系统。

    On-chip lenses for diverting vertical cavity surface emitting laser beams
    8.
    发明申请
    On-chip lenses for diverting vertical cavity surface emitting laser beams 失效
    用于转向垂直腔表面发射激光束的片上透镜

    公开(公告)号:US20060227844A1

    公开(公告)日:2006-10-12

    申请号:US11103277

    申请日:2005-04-11

    申请人: James Guenter

    发明人: James Guenter

    IPC分类号: H01S3/08

    摘要: An optical device is disclosed that includes a chip containing a Vertical Cavity Surface Emitting Laser (VCSEL) active region that produces a laser beam on a first axis. The VCSEL can further include a post having a central axis offset a distance from the first axis. A lens can be mounted on the post such that it bends the laser beam away from the first axis. Alternately, the chip can include multiple VCSEL active regions each of which produces a laser beam on a different axis. The chip can include a post having a central axis offset from the laser beam axes. A lens can be mounted on the post such that the lens bends the laser beams away from the central axis.

    摘要翻译: 公开了一种光学装置,其包括含有在第一轴上产生激光束的垂直腔表面发射激光器(VCSEL)有源区的芯片。 VCSEL还可以包括具有偏离第一轴线的距离的中心轴线的柱。 透镜可以安装在柱上,使得其将激光束弯曲离开第一轴线。 或者,芯片可以包括多个VCSEL有源区域,每个VCSEL有源区域在不同的轴上产生激光束。 芯片可以包括具有偏离激光束轴的中心轴的柱。 透镜可以安装在柱上,使得透镜将激光束弯曲远离中心轴线。

    Optical cables for consumer electronics

    公开(公告)号:US20060067690A1

    公开(公告)日:2006-03-30

    申请号:US11198619

    申请日:2005-08-05

    IPC分类号: H04J14/00

    CPC分类号: H04N7/22 G02B6/4246

    摘要: Digital optical cables for communication between digital consumer electronic devices. The digital optical cable can include an optical fiber, a first interface configured to couple a digital source device to a first end of the optical fiber, the first interface can comprise an optical transmitter for receiving an electronic video signal from the digital source device, converting the electronic video signal to an optical signal, and for transmitting the optical signal onto the first end of the optical fiber. A second interface can be configured to couple a digital sink device to a second end of the optical fiber, the second interface comprising an optical receiver for receiving the optical signal transmitted by the optical transmitter from the second end of the optical fiber, converting the optical signal to an electronic video signal, and transmitting the electronic signal to the digital sink device.

    Photodiode bandgaps for reducing spontaneous emissions in photodiodes
    10.
    发明申请
    Photodiode bandgaps for reducing spontaneous emissions in photodiodes 有权
    用于减少光电二极管自发辐射的光电二极管带隙

    公开(公告)号:US20050286585A1

    公开(公告)日:2005-12-29

    申请号:US11026495

    申请日:2004-12-30

    IPC分类号: H01S5/00 H01S5/026 H01S5/183

    摘要: An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.

    摘要翻译: 一种降低激光器有源区自发发射效应的光学结构。 光学结构包括优化以减少自发辐射的影响。 光学结构包括具有顶部和底部DBR反射镜的VCSEL和连接到反射镜的有源区域。 光学结构还包括连接到VCSEL的光电二极管。 可以在光学结构中包括一个或多个优化,包括光学吸收材料,改变结构的几何形状以改变反射角度,使用光学孔径,改变一个或多个反射镜的反射率,将光电二极管改变为对自发辐射更为不透明 ,并使用离子注入来降低光致发光效率。