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公开(公告)号：US08985152B2
公开(公告)日：2015-03-24
申请号：US13626717
申请日：2012-09-25
IPC分类号： F16K1/00 , C23C16/455 , F16K27/00
CPC分类号： C23C16/45544 , C23C16/45561 , F16K27/003 , Y10T137/4245 , Y10T137/6416 , Y10T137/87249 , Y10T137/87684 , Y10T137/87885
摘要： A point-of-use valve (POU valve) manifold is provided that allows for multiple precursors to be delivered to a semiconductor processing chamber through a common outlet. The manifold may have a plurality of precursor inlets and a purge gas inlet. The manifold may be configured such that there are zero dead legs in the manifold when the purge gas is routed through the manifold, and may provide mounting location for the POU valves that alternate sides. One or more internal flow path volumes may include elbow features.
摘要翻译： 提供了一种使用点的阀（POU阀）歧管，其允许通过公共出口将多个前体输送到半导体处理室。 歧管可以具有多个前体入口和净化气体入口。 歧管可以被配置为使得当净化气体被引导通过歧管时歧管中存在零死角，并且可以为交替侧面的POU阀提供安装位置。 一个或多个内部流路径体积可以包括肘部特征。
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公开(公告)号：US20130333768A1
公开(公告)日：2013-12-19
申请号：US13626717
申请日：2012-09-25
CPC分类号： C23C16/45544 , C23C16/45561 , F16K27/003 , Y10T137/4245 , Y10T137/6416 , Y10T137/87249 , Y10T137/87684 , Y10T137/87885
摘要： A point-of-use valve (POU valve) manifold is provided that allows for multiple precursors to be delivered to a semiconductor processing chamber through a common outlet. The manifold may have a plurality of precursor inlets and a purge gas inlet. The manifold may be configured such that there are zero dead legs in the manifold when the purge gas is routed through the manifold, and may provide mounting location for the POU valves that alternate sides. One or more internal flow path volumes may include elbow features.
摘要翻译： 提供了一种使用点的阀（POU阀）歧管，其允许通过公共出口将多个前体输送到半导体处理室。 歧管可以具有多个前体入口和净化气体入口。 歧管可以被配置为使得当净化气体被引导通过歧管时歧管中存在零死角，并且可以为交替侧面的POU阀提供安装位置。 一个或多个内部流路径体积可以包括肘部特征。
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公开(公告)号：US20110256724A1
公开(公告)日：2011-10-20
申请号：US13083827
申请日：2011-04-11
申请人： Ramesh Chandrasekharan , Antonio Xavier , Kevin Jennings , Ming Li , Henri Jon , Dennis Hausmann
发明人： Ramesh Chandrasekharan , Antonio Xavier , Kevin Jennings , Ming Li , Henri Jon , Dennis Hausmann
IPC分类号： H01L21/311 , B67D7/06 , B67D7/14
CPC分类号： C23C16/4481 , C23C16/45525 , C23C16/45557 , C23C16/52
摘要： A liquid injection system for a processing chamber includes a liquid injector that receives a liquid from a liquid supply and that selectively pulses the liquid into a conduit. A control module selects a number of pulses and a pulse width of the liquid injector. A gas supply supplies gas into the conduit. A sensor senses at least one of a first temperature and a first pressure in the conduit and that generates at least one of a first temperature signal and a first pressure signal, respectively. The control module confirms that the selected number of pulses occur based on the at least one of the first temperature signal and the first pressure signal.
摘要翻译： 用于处理室的液体注入系统包括液体注入器，该液体注入器从液体供应器接收液体并且选择性地将液体脉冲到导管中。 控制模块选择液体喷射器的脉冲数和脉冲宽度。 气体供应将气体供应到管道中。 传感器感测导管中的第一温度和第一压力中的至少一个，并分别产生第一温度信号和第一压力信号中的至少一个。 控制模块确认基于第一温度信号和第一压力信号中的至少一个发生所选择的脉冲数。
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公开(公告)号：US08728956B2
公开(公告)日：2014-05-20
申请号：US13084399
申请日：2011-04-11
申请人： Adrien LaVoie , Shankar Swaminathan , Hu Kang , Ramesh Chandrasekharan , Tom Dorsh , Dennis M. Hausmann , Jon Henri , Thomas Jewell , Ming Li , Bryan Schlief , Antonio Xavier , Thomas W. Mountsier , Bart J. van Schravendijk , Easwar Srinivasan , Mandyam Sriram
发明人： Adrien LaVoie , Shankar Swaminathan , Hu Kang , Ramesh Chandrasekharan , Tom Dorsh , Dennis M. Hausmann , Jon Henri , Thomas Jewell , Ming Li , Bryan Schlief , Antonio Xavier , Thomas W. Mountsier , Bart J. van Schravendijk , Easwar Srinivasan , Mandyam Sriram
IPC分类号： H01L21/31
CPC分类号： H01L21/0228 , C23C16/045 , C23C16/345 , C23C16/402 , C23C16/45523 , C23C16/4554 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02348 , H01L21/28562 , H01L21/67017 , H01L21/6719 , H01L21/67201 , H01L21/76224 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76837 , H01L21/76898
摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.
摘要翻译： 在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面，该方法的特征在于以下操作：（a）在允许第一反应物吸附到基底表面上的条件下，将气相底物表面暴露于第一反应物; （b）当所述第一反应物吸附在所述基材表面上时，将所述基材表面暴露于气相中的第二反应物; 和（c）将衬底表面暴露于等离子体以驱动吸附在衬底表面上的第一和第二反应物之间的反应以形成膜。
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公开(公告)号：US20110256726A1
公开(公告)日：2011-10-20
申请号：US13084399
申请日：2011-04-11
申请人： Adrien LaVoie , Shankar Swaminathan , Hu Kang , Ramesh Chandrasekharan , Tom Dorsh , Dennis M. Hausmann , Jon Henri , Thomas Jewell , Ming Li , Bryan Schlief , Antonio Xavier , Thomas W. Mountsier , Bart J. van Schravendijk , Easwar Srinivasan , Mandyam Sriram
发明人： Adrien LaVoie , Shankar Swaminathan , Hu Kang , Ramesh Chandrasekharan , Tom Dorsh , Dennis M. Hausmann , Jon Henri , Thomas Jewell , Ming Li , Bryan Schlief , Antonio Xavier , Thomas W. Mountsier , Bart J. van Schravendijk , Easwar Srinivasan , Mandyam Sriram
IPC分类号： H01L21/311 , H01L21/31 , H01L21/306 , C23F1/02 , B05C5/00 , B32B38/08
CPC分类号： H01L21/0228 , C23C16/045 , C23C16/345 , C23C16/402 , C23C16/45523 , C23C16/4554 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02348 , H01L21/28562 , H01L21/67017 , H01L21/6719 , H01L21/67201 , H01L21/76224 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76837 , H01L21/76898
摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.
摘要翻译： 在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面，该方法的特征在于以下操作：（a）在允许第一反应物吸附到基底表面上的条件下，将气相底物表面暴露于第一反应物; （b）当所述第一反应物吸附在所述基材表面上时，将所述基材表面暴露于气相中的第二反应物; 和（c）将衬底表面暴露于等离子体以驱动吸附在衬底表面上的第一和第二反应物之间的反应以形成膜。
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