Die-level wafer contact for direct-on-barrier plating
    1.
    发明申请
    Die-level wafer contact for direct-on-barrier plating 审中-公开
    用于直接屏蔽电镀的晶片级晶片接触

    公开(公告)号:US20060226019A1

    公开(公告)日:2006-10-12

    申请号:US11399762

    申请日:2006-04-07

    IPC分类号: C25D7/12

    摘要: The present invention provides a semiconductor workpiece support and contact assembly for providing localized electrical connections with the device side of the workpiece. The additional contact points help overcome the terminal effect caused by very high sheet resistance of thin barrier layers and enable plating a conformal seed layer or feature filling directly on thin barrier layers. By utilizing the streets that separate individual dice on a workpiece to make electrical connections with the workpiece and provide localized distribution of plating chemistry, the present invention provides a more uniform and conformal metallization layer.

    摘要翻译: 本发明提供一种用于提供与工件的装置侧的局部电连接的半导体工件支撑和接触组件。 额外的接触点有助于克服由薄阻挡层的非常高的薄层电阻引起的终端效应,并且能够将保形种子层或特征直接填充在薄的阻挡层上。 通过利用在工件上分离单个骰子以与工件电连接并且提供电镀化学物质的局部分布的街道,本发明提供了更均匀和保形的金属化层。

    Apparatus and method for processing a microelectronic workpiece using metrology
    3.
    发明申请
    Apparatus and method for processing a microelectronic workpiece using metrology 有权
    使用计量处理微电子工件的装置和方法

    公开(公告)号:US20050107971A1

    公开(公告)日:2005-05-19

    申请号:US10685306

    申请日:2003-10-14

    IPC分类号: H01L21/00 G06F19/00

    摘要: A processing apparatus for processing a microelectronic workpiece includes a metrology unit and a control, signal-connected to the metrology unit. The control can modify a process recipe or a process sequence of the processing apparatus based on a feed forward or a feed back signal from the metrology unit. A seed layer deposition tool, a process layer electrochemical deposition tool, and a chemical mechanical polishing tool, arranged for sequential processing of a workpiece, can be controlled as an integrated system using one or more metrology units. A metrology unit can be located at each tool to measure workpiece parameters. Each of the metrology units can be used as a feed forward control and/or a feed back control at each of the tools.

    摘要翻译: 用于处理微电子工件的处理装置包括测量单元和与计量单元信号连接的控制。 该控制可以基于来自计量单元的前馈或反馈信号来修改处理设备的处理配方或处理顺序。 布置用于对工件进行连续加工的种子层沉积工具,工艺层电化学沉积工具和化学机械抛光工具可被控制为使用一个或多个计量单元的集成系统。 每个工具都可以设置一个测量单元来测量工件参数。 每个计量单元可用作每个工具的前馈控制和/或反馈控制。

    Processing apparatus including a reactor for electrochemically etching microelectronic workpiece
    4.
    发明授权
    Processing apparatus including a reactor for electrochemically etching microelectronic workpiece 失效
    包括用于电化学蚀刻微电子工件的反应器的处理装置

    公开(公告)号:US07524406B2

    公开(公告)日:2009-04-28

    申请号:US10745190

    申请日:2003-12-23

    IPC分类号: C25D17/00 C25D21/12

    摘要: Although there are several inventions disclosed herein, the present application is directed to a reactor for electrochemically processing a microelectronic workpiece. The reactor comprises a movable electrode assembly that is disposed for movement along a motion path. The motion path includes at least a portion thereof over which the electrode assembly is positioned for processing at least one surface of the microelectronic workpiece. A cleaning electrode is located along the motion path of the movable electrode assembly. In one embodiment, a programmable controller is connected to direct the movable electrode assembly to move to the cleaning electrode during a cleaning cycle. At that time, the programmable controller connects the movable electrode assembly as an anode and the cleaning electrode as a cathode for cleaning of the movable electrode assembly. The cleaning electrode may be disposed along a position of the motion path that is beyond the range of motion required to process the microelectronic workpiece so that the programmable controller may be programmed to conduct a cleaning cycle while a microelectronic workpiece is present in the reactor for processing.

    摘要翻译: 虽然本文公开了几个发明,但是本申请涉及用于电化学处理微电子工件的反应器。 反应器包括可移动电极组件,其被设置为沿着运动路径移动。 运动路径至少包括一部分,电极组件定位在该部分上用于处理微电子工件的至少一个表面。 沿着可动电极组件的运动路径设置清洁电极。 在一个实施例中,连接可编程控制器以在清洁循环期间引导可移动电极组件移动到清洁电极。 此时,可编程控制器将作为阳极的可动电极组件和作为用于清洁可动电极组件的阴极的清洁电极连接起来。 清洁电极可以沿着运动路径的位置设置,该位置超出处理微电子工件所需的运动范围,使得可编程控制器可以被编程以在微电子工件存在于反应器中进行清洁循环以进行处理 。

    Adaptable electrochemical processing chamber
    5.
    发明申请
    Adaptable electrochemical processing chamber 审中-公开
    适应电化学处理室

    公开(公告)号:US20050155864A1

    公开(公告)日:2005-07-21

    申请号:US11081030

    申请日:2005-03-10

    摘要: An electrochemical processing chamber which can be modified for treating different workpieces and methods for so modifying electrochemical processing chambers. In one particular embodiment, an electrochemical processing chamber 200 includes a plurality of walls 510 defining a plurality of electrode compartments 520, each electrode compartment having at least one electrode 600 therein, and a virtual electrode unit 530 defining a plurality of flow conduits, with at least one of the flow conduits being in fluid communication with each of the electrode compartments. This first virtual electrode unit 530 may be exchanged for a second virtual electrode unit 540, without modification of any of the electrodes 600, to adapt the processing chamber 200 for treating a different workpiece.

    摘要翻译: 一种电化学处理室,可用于处理不同的工件和改性电化学处理室的方法。 在一个特定实施例中,电化学处理室200包括限定多个电极隔室520的多个壁510,每个电极室中具有至少一个电极600,以及限定多个流动管道的虚拟电极单元530, 至少一个流动管道与每个电极隔室流体连通。 第一虚拟电极单元530可以被替换为第二虚拟电极单元540,而不改变任何电极600,以使处理室200适应于处理不同的工件。

    Processing apparatus including a reactor for electrochemically etching a microelectronic workpiece
    6.
    发明授权
    Processing apparatus including a reactor for electrochemically etching a microelectronic workpiece 失效
    包括用于电化学蚀刻微电子工件的反应器的处理装置

    公开(公告)号:US06773559B2

    公开(公告)日:2004-08-10

    申请号:US09782216

    申请日:2001-02-13

    IPC分类号: C25D1700

    摘要: Although there are several inventions disclosed herein, the present application is directed to a reactor for electrochemically processing a microelectronic workpiece. The reactor comprises a movable electrode assembly that is disposed for movement along a motion path. The motion path includes at least a portion thereof over which the electrode assembly is positioned for processing at least one surface of the microelectronic workpiece. A cleaning electrode is located along the motion path of the movable electrode assembly. In one embodiment, a programmable controller is connected to direct the movable electrode assembly to move to the cleaning electrode during a cleaning cycle. At that time, the programmable controller connects the movable electrode assembly as an anode and the cleaning electrode as a cathode for cleaning of the movable electrode assembly. The cleaning electrode may be disposed along a position of the motion path that is beyond the range of motion required to process the microelectronic workpiece so that the programmable controller may be programmed to conduct a cleaning cycle while a microelectronic workpiece is present in the reactor for processing.

    摘要翻译: 虽然本文公开了几个发明,但是本申请涉及用于电化学处理微电子工件的反应器。 反应器包括可移动电极组件,其被设置为沿着运动路径移动。 运动路径至少包括一部分,电极组件定位在该部分上用于处理微电子工件的至少一个表面。 沿着可动电极组件的运动路径设置清洁电极。 在一个实施例中,连接可编程控制器以在清洁循环期间引导可移动电极组件移动到清洁电极。 此时,可编程控制器将作为阳极的可动电极组件和作为用于清洁可动电极组件的阴极的清洁电极连接起来。 清洁电极可以沿着运动路径的位置设置,该位置超出处理微电子工件所需的运动范围,使得可编程控制器可以被编程以在微电子工件存在于反应器中进行清洁循环以进行处理 。

    Contact assemblies for electrochemical processing of microelectronic workpieces and method of making thereof
    7.
    发明申请
    Contact assemblies for electrochemical processing of microelectronic workpieces and method of making thereof 有权
    微电子工件电化学处理接触组件及其制造方法

    公开(公告)号:US20050045474A1

    公开(公告)日:2005-03-03

    申请号:US10497670

    申请日:2002-12-05

    IPC分类号: C25D7/12 C25D17/06

    摘要: Contact assemblies for electrochemical processing of microelectronic workpieces. The contact assembly (400) can comprise a support member (410) that includes an inner wall (412) which defines an opening (414) configured to receive the work-piece and a plurality of contacts (420). The individual contacts (420) include a conductor (440) and a cover (430). The conductor (440) can comprise a proximal section (435) projecting inwardly into the opening (414) relative to the support member (410), a distal section (436) extending from the proximal section (435), and an inert exterior (444) at least at the distal section (436). The cover (430) comprises a dielectric element that covers at least the proximal section of the conductor, but does not cover at least a portion of the distal section of the core. The exposed portion of the distal section of the core, accordingly, defines a conductive contact site for contacting a conductive layer (e.g., a seed layer) on the workpiece.

    摘要翻译: 微电子工件电化学处理接触组件。 接触组件(400)可以包括支撑构件(410),该支撑构件包括内壁(412),内壁限定了构造成容纳工件的多个触点(420)的开口(414)。 各个触点(420)包括导体(440)和盖(430)。 导体(440)可以包括相对于支撑构件(410)向内伸入开口(414)的近端部分(435),从近侧部分(435)延伸的远端部分(436)和惰性外部 444),至少在远端部分(436)。 盖(430)包括覆盖导体的至少近端部分但不覆盖芯的远端部分的至少一部分的电介质元件。 因此,芯的远端部分的暴露部分限定了用于接触工件上的导电层(例如种子层)的导电接触部位。