公开(公告)号：US20050107971A1

公开(公告)日：2005-05-19

申请号：US10685306

申请日：2003-10-14

申请人： Thomas Ritzdorf ,  Steve Eudy ,  Gregory Wilson ,  Paul McHugh

发明人： Thomas Ritzdorf ,  Steve Eudy ,  Gregory Wilson ,  Paul McHugh

IPC分类号： H01L21/00 ,  G06F19/00

CPC分类号： H01L21/67173 ,  H01L21/67103 ,  H01L21/67207 ,  H01L21/67219 ,  H01L21/67253 ,  H01L21/67276

摘要： A processing apparatus for processing a microelectronic workpiece includes a metrology unit and a control, signal-connected to the metrology unit. The control can modify a process recipe or a process sequence of the processing apparatus based on a feed forward or a feed back signal from the metrology unit. A seed layer deposition tool, a process layer electrochemical deposition tool, and a chemical mechanical polishing tool, arranged for sequential processing of a workpiece, can be controlled as an integrated system using one or more metrology units. A metrology unit can be located at each tool to measure workpiece parameters. Each of the metrology units can be used as a feed forward control and/or a feed back control at each of the tools.

摘要翻译： 用于处理微电子工件的处理装置包括测量单元和与计量单元信号连接的控制。 该控制可以基于来自计量单元的前馈或反馈信号来修改处理设备的处理配方或处理顺序。 布置用于对工件进行连续加工的种子层沉积工具，工艺层电化学沉积工具和化学机械抛光工具可被控制为使用一个或多个计量单元的集成系统。 每个工具都可以设置一个测量单元来测量工件参数。 每个计量单元可用作每个工具的前馈控制和/或反馈控制。

公开(公告)号：US20060037855A1

公开(公告)日：2006-02-23

申请号：US11111672

申请日：2005-04-20

申请人： Kyle Hanson ,  Steve Eudy ,  Thomas Ritzdorf ,  Gregory Wilson ,  Daniel Woodruff ,  Randy Harris ,  Curtis Weber ,  Tim McGlenn ,  Timothy Anderson ,  Daniel Bexten

发明人： Kyle Hanson ,  Steve Eudy ,  Thomas Ritzdorf ,  Gregory Wilson ,  Daniel Woodruff ,  Randy Harris ,  Curtis Weber ,  Tim McGlenn ,  Timothy Anderson ,  Daniel Bexten

IPC分类号： C25D17/00

CPC分类号： C25D21/12 ,  C23C18/1632 ,  C25D7/123 ,  C25D17/001 ,  C25D17/008 ,  H01L21/67005 ,  H01L21/6723

摘要： Processing tools, components of tools, and methods of making and using such devices for electrochemical processing of microelectronic workpieces. One aspect of the invention is directed toward reaction vessels for electrochemical processing of microelectronic workpieces, processing stations including such reaction vessels, and methods for using these devices. For example, one embodiment of a reaction vessel includes an outer container having an outer wall, a first outlet configured to introduce a primary fluid flow into the outer container, and at least one second outlet configured to introduce a secondary fluid flow into the outer container separate from the primary fluid flow. The reaction vessel can also include at least one electrode, and it can also have a field shaping unit. The field shaping unit, for example, can be a dielectric assembly coupled to the second outlet to receive the secondary flow and configured to contain the secondary flow separate from the primary flow through at least a portion of the outer container. The field shaping unit can also have at least one electrode compartment through which the secondary flow can pass separately from the primary flow. The electrode is positioned in the electrode compartment.

公开(公告)号：US20060226019A1

公开(公告)日：2006-10-12

申请号：US11399762

申请日：2006-04-07

申请人： Raymon Thompson ,  Paul McHugh ,  Daniel Woodruff ,  Gregory Wilson ,  Steve Eudy ,  Rajesh Baskaran

发明人： Raymon Thompson ,  Paul McHugh ,  Daniel Woodruff ,  Gregory Wilson ,  Steve Eudy ,  Rajesh Baskaran

IPC分类号： C25D7/12

CPC分类号： C25D17/001 ,  C25D7/123 ,  C25D17/005 ,  C25D17/06 ,  H01L21/2885 ,  H01L21/76873 ,  H01L21/76877

摘要： The present invention provides a semiconductor workpiece support and contact assembly for providing localized electrical connections with the device side of the workpiece. The additional contact points help overcome the terminal effect caused by very high sheet resistance of thin barrier layers and enable plating a conformal seed layer or feature filling directly on thin barrier layers. By utilizing the streets that separate individual dice on a workpiece to make electrical connections with the workpiece and provide localized distribution of plating chemistry, the present invention provides a more uniform and conformal metallization layer.

摘要翻译： 本发明提供一种用于提供与工件的装置侧的局部电连接的半导体工件支撑和接触组件。 额外的接触点有助于克服由薄阻挡层的非常高的薄层电阻引起的终端效应，并且能够将保形种子层或特征直接填充在薄的阻挡层上。 通过利用在工件上分离单个骰子以与工件电连接并且提供电镀化学物质的局部分布的街道，本发明提供了更均匀和保形的金属化层。

公开(公告)号：US20050189214A1

公开(公告)日：2005-09-01

申请号：US11096428

申请日：2005-03-29

申请人： Kyle Hanson ,  Thomas Ritzdorf ,  Gregory Wilson ,  Paul McHugh

发明人： Kyle Hanson ,  Thomas Ritzdorf ,  Gregory Wilson ,  Paul McHugh

IPC分类号： C25D7/12 ,  C10B1/00 ,  C25C7/00 ,  C25D3/00 ,  C25D5/00 ,  C25D17/00 ,  C25D21/00 ,  H01L21/00

CPC分类号： H01L21/6719 ,  C25D7/123 ,  C25D17/001 ,  H01L21/67103 ,  H01L21/6723

摘要： An apparatus and method for electrochemical processing of microelectronic workpieces in a reaction vessel. In one embodiment, the reaction vessel includes: an outer container having an outer wall; a distributor coupled to the outer container, the distributor having a first outlet configured to introduce a primary flow into the outer container and at least one second outlet configured to introduce a secondary flow into the outer container separate from the primary flow; a primary flow guide in the outer container coupled to the distributor to receive the primary flow from the first outlet and direct it to a workpiece processing site; a dielectric field shaping unit in the outer container coupled to the distributor to receive the secondary flow from the second outlet, the field shaping unit being configured to contain the secondary flow separate from the primary flow through at least a portion of the outer container, and the field shaping unit having at least one electrode compartment through which the secondary flow can pass while the secondary flow is separate from the primary flow; an electrode in the electrode compartment; and an interface member carried by the field shaping unit downstream from the electrode, the interface member being in fluid communication with the secondary flow in the electrode compartment, and the interface member being configured to prevent selected matter of the secondary flow from passing to the primary flow.

公开(公告)号：US20070089991A1

公开(公告)日：2007-04-26

申请号：US11639733

申请日：2006-12-14

申请人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

发明人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

IPC分类号： C25D21/12

CPC分类号： C25D21/12 ,  C25D17/001 ,  C25F3/30

摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters. In some embodiments, the facility analyzes a profile of the seed layer applied to a workpiece, and determines and communicates to a material deposition tool a set of control parameters designed to deposit material on the workpiece in a manner that compensates for deficiencies in the seed layer.

摘要翻译： 描述了一种用于选择和精炼用于在处理室中处理微电子工件的电参数的设备。 该设备最初根据处理室的数学模型或从操作实际处理室得到的实验数据来初始配置电参数。 在用初始参数配置处理工件之后，测量结果，并且使用基于处理室的数学模型的灵敏度矩阵来选择校正在第一工件的处理中测量的任何缺陷的新参数。 然后将这些参数用于处理可以类似地测量的第二工件，并且用于进一步改进参数的结果。 在一些实施例中，设备分析施加到工件的种子层的轮廓，并且确定并传送材料沉积工具一组控制参数，这些控制参数被设计成以补偿种子层中的缺陷的方式在工件上沉积材料 。

公开(公告)号：US20050205409A1

公开(公告)日：2005-09-22

申请号：US11096965

申请日：2005-03-29

申请人： Kyle Hanson ,  Thomas Ritzdorf ,  Gregory Wilson ,  Paul McHugh

发明人： Kyle Hanson ,  Thomas Ritzdorf ,  Gregory Wilson ,  Paul McHugh

IPC分类号： C25D7/12 ,  C10B1/00 ,  C25C7/00 ,  C25D3/00 ,  C25D5/00 ,  C25D17/00 ,  C25D21/00 ,  H01L21/00

CPC分类号： H01L21/6719 ,  C25D7/123 ,  C25D17/001 ,  H01L21/67103 ,  H01L21/6723

摘要： An apparatus and method for electrochemical processing of microelectronic workpieces in a reaction vessel. In one embodiment, the reaction vessel includes: an outer container having an outer wall; a distributor coupled to the outer container, the distributor having a first outlet configured to introduce a primary flow into the outer container and at least one second outlet configured to introduce a secondary flow into the outer container separate from the primary flow; a primary flow guide in the outer container coupled to the distributor to receive the primary flow from the first outlet and direct it to a workpiece processing site; a dielectric field shaping unit in the outer container coupled to the distributor to receive the secondary flow from the second outlet, the field shaping unit being configured to contain the secondary flow separate from the primary flow through at least a portion of the outer container, and the field shaping unit having at least one electrode compartment through which the secondary flow can pass while the secondary flow is separate from the primary flow; an electrode in the electrode compartment; and an interface member carried by the field shaping unit downstream from the electrode, the interface member being in fluid communication with the secondary flow in the electrode compartment, and the interface member being configured to prevent selected matter of the secondary flow from passing to the primary flow.

摘要翻译： 用于反应容器中微电子工件的电化学处理的装置和方法。 在一个实施例中，反应容器包括：具有外壁的外容器; 分配器，其耦合到所述外部容器，所述分配器具有构造成将主流引入所述外部容器中的第一出口和构造成将二次流引导到与所述主流分离的所述外部容器中的至少一个第二出口; 外部容器中的主要流动引导件联接到分配器以接收来自第一出口的主流并将其引导到工件加工位置; 所述外容器中的电介质场成形单元联接到所述分配器以接收来自所述第二出口的二次流，所述场整形单元构造成容纳所述次流与所述主流分离通过所述外容器的至少一部分，以及 所述场成形单元具有至少一个电极室，所述二次流可以通过所述至少一个电极室，而所述二次流与所述主流分离; 电极室中的电极; 以及由所述场成形单元承载在所述电极的下游的界面构件，所述界面构件与所述电极室中的所述次流体流体连通，并且所述界面构件被构造成防止所述二次流的选定物质通过所述主流 流。

公开(公告)号：US20050189227A1

公开(公告)日：2005-09-01

申请号：US11097671

申请日：2005-03-31

申请人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

发明人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

IPC分类号： B23H3/02 ,  C25B9/00 ,  C25C3/16 ,  C25C3/20 ,  C25D5/00 ,  C25D5/02 ,  C25D17/00 ,  C25D21/12 ,  C25F7/00 ,  G06F19/00

CPC分类号： C25D21/12 ,  C25D17/001 ,  C25F3/30

摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters. In some embodiments, the facility analyzes a profile of the seed layer applied to a workpiece, and determines and communicates to a material deposition tool a set of control parameters designed to deposit material on the workpiece in a manner that compensates for deficiencies in the seed layer.

公开(公告)号：US20070034516A1

公开(公告)日：2007-02-15

申请号：US11392477

申请日：2006-03-28

申请人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

发明人： Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

IPC分类号： C25D21/12

CPC分类号： G05B19/41875 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  G05B2219/32182 ,  G05B2219/32216 ,  G05B2219/45031 ,  Y02P90/22 ,  Y02P90/265

摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a numerical of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the numerical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

摘要翻译： 描述了一种用于选择和精炼用于在处理室中处理微电子工件的电参数的设备。 该设施最初根据处理室的数值或从操作实际处理室得到的实验数据来配置电参数。 在用初始参数配置处理工件之后，测量结果，并且使用基于处理室的数值模型的灵敏度矩阵来选择校正在第一工件的处理中测量的任何缺陷的新参数。 然后将这些参数用于处理可以类似地测量的第二工件，并且用于进一步改进参数的结果。

公开(公告)号：US20050245083A1

公开(公告)日：2005-11-03

申请号：US11053050

申请日：2005-02-07

申请人： Linlin Chen ,  Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

发明人： Linlin Chen ,  Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

IPC分类号： C25D3/38 ,  C25D5/02 ,  C25D5/08 ,  C25D5/10 ,  C25D5/50 ,  C25D7/12 ,  C25D17/10 ,  C25D21/12 ,  H01L21/288 ,  H01L21/44 ,  H01L21/768

CPC分类号： H01L21/76868 ,  C25D3/38 ,  C25D5/08 ,  C25D5/10 ,  C25D5/50 ,  C25D7/123 ,  C25D17/02 ,  C25D17/10 ,  C25D17/12 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089 ,  Y10S204/07 ,  Y10T428/12493

摘要： A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

摘要翻译： 用于对诸如半导体工件的工件进行金属化的工艺。 在一个实施方案中，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积方法增强已经沉积在阻挡层上的超薄铜籽晶层 作为PVD。 所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。 当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。 此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。

公开(公告)号：US20050194248A1

公开(公告)日：2005-09-08

申请号：US11096630

申请日：2005-03-29

申请人： Kyle Hanson ,  Thomas Ritzdorf ,  Gregory Wilson ,  Paul McHugh

发明人： Kyle Hanson ,  Thomas Ritzdorf ,  Gregory Wilson ,  Paul McHugh

IPC分类号： C25D7/12 ,  C10B1/00 ,  C25C7/00 ,  C25D3/00 ,  C25D5/00 ,  C25D17/00 ,  C25D21/00 ,  H01L21/00

CPC分类号： H01L21/6719 ,  C25D7/123 ,  C25D17/001 ,  H01L21/67103 ,  H01L21/6723

摘要： An apparatus and method for electrochemical processing of microelectronic workpieces in a reaction vessel. In one embodiment, the reaction vessel includes: an outer container having an outer wall; a distributor coupled to the outer container, the distributor having a first outlet configured to introduce a primary flow into the outer container and at least one second outlet configured to introduce a secondary flow into the outer container separate from the primary flow; a primary flow guide in the outer container coupled to the distributor to receive the primary flow from the first outlet and direct it to a workpiece processing site; a dielectric field shaping unit in the outer container coupled to the distributor to receive the secondary flow from the second outlet, the field shaping unit being configured to contain the secondary flow separate from the primary flow through at least a portion of the outer container, and the field shaping unit having at least one electrode compartment through which the secondary flow can pass while the secondary flow is separate from the primary flow; an electrode in the electrode compartment; and an interface member carried by the field shaping unit downstream from the electrode, the interface member being in fluid communication with the secondary flow in the electrode compartment, and the interface member being configured to prevent selected matter of the secondary flow from passing to the primary flow.