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公开(公告)号：US4655191A
公开(公告)日：1987-04-07
申请号：US709758
申请日：1985-03-08
CPC分类号： H02G1/005 , B23D57/0069 , B28D5/007 , B28D5/045 , Y10T83/6895 , Y10T83/7055 , Y10T83/9292
摘要： A wire saw machine having a wire supply source providing a plurality of strands of wire results in a wire saw system having parallel wires. The wire supply source feed spindle holds a supply source at a slight angle advance to allow the wire to transfer from the supply source to a grooved wire guide in a parallel manner. Two moveable wire guides are used to impart a back and forth motion to the wire over the cutting area and at the same time serve as an intermediate storage area for the wire being used in the cutting area. The wire supply source includes a plurality of individually rotatable wire reels. A friction disc is located between each of the individual wire reels and is held fixed with respect to the spindle.
摘要翻译： 具有提供多条线材的供线源的线锯机产生具有平行线的线锯系统。 供电源馈送主轴以稍微的角度保持供电源，以允许电线以平行的方式从供电源传送到带槽的导线器。 两个可移动导线引导件用于在切割区域上向导线施加前后运动，并且同时用作在切割区域中使用的导线的中间存储区域。 电源供应源包括多个可单独旋转的导线盘。 摩擦盘位于每个单独的线卷轴之间并相对于主轴保持固定。
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公开(公告)号：US5268326A
公开(公告)日：1993-12-07
申请号：US951991
申请日：1992-09-28
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76264 , H01L21/76275 , H01L21/76286 , Y10S148/012 , Y10S148/135 , Y10S438/928
摘要： A dielectric and conductive isolated island is fabricated by providing an active wafer having a first and a second major surface, a doped region extending from the first surface, and a trench formed at the first surface. A conductive layer is formed on the first surface and in the trench. A planarizable layer comprised of a dielectric layer is then formed on the conductive layer. A handle wafer is bonded to the planarizable layer. The active wafer and the handle wafer are heated so that the doped region diffuses along the conductive layer to form an equalized concentration of dopant along the conductive layer which diffuses into the active wafer to form the doped region adjacent all of the conductive layer. A portion of the second surface of the active wafer is then removed so that at least a portion of the dielectric layer of the planarizable layer is exposed.
摘要翻译： 通过提供具有第一和第二主表面的活性晶片，从第一表面延伸的掺杂区域和形成在第一表面处的沟槽来制造电介质和导电隔离岛。 在第一表面和沟槽中形成导电层。 然后在导电层上形成由电介质层构成的可平坦化层。 把手晶片结合到可平面化层。 加热有源晶片和处理晶片，使得掺杂区域沿着导电层扩散，以沿着扩散到有源晶片中的导电层形成均匀浓度的掺杂剂，以形成与所有导电层相邻的掺杂区域。 然后去除活性晶片的第二表面的一部分，使得可平面化层的电介质层的至少一部分被暴露。
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公开(公告)号：US5131968A
公开(公告)日：1992-07-21
申请号：US565761
申请日：1990-07-31
CPC分类号： B32B38/162 , B32B37/0007 , B32B37/10 , H01L21/2007 , H01L21/67092 , Y10S148/135
摘要： An apparatus and method for improved wafer bonding by scrubbing, spin drying, aligning, and pressing the polished wafers together. The first wafer (13) is mounted on a flat wafer chuck (11) and a second wafer (14) is mounted on a convex pressure gradient chuck (10). Wafers are scrubbed until a polished contamination free surface is obtained and pressed together. The convex pressure gradient chuck exerts a higher pressure at the center of the wafer than at the periphery of the wafer.
摘要翻译： 通过洗涤，旋转干燥，对准和将抛光的晶片压在一起来改进晶片接合的装置和方法。 第一晶片（13）安装在平板晶片卡盘（11）上，第二晶片（14）安装在凸压力梯度卡盘（10）上。 洗涤晶片，直到获得抛光的无污染表面并压在一起。 凸形压力梯度卡盘在晶片的中心处施加比在晶片周边更高的压力。
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公开(公告)号：USRE36890E
公开(公告)日：2000-10-03
申请号：US535680
申请日：1995-09-28
IPC分类号： H01L21/20 , B32B31/16 , H01L21/304
CPC分类号： B32B37/0007 , B32B37/10 , B32B38/162 , H01L21/2007
摘要： An apparatus and method for improved wafer bonding by scrubbing, spin drying, aligning, and pressing the polished wafers together. The first wafer (13) is mounted on a flat wafer chuck (11) and a second wafer (14) is mounted on a convex pressure gradient chuck (10). Wafers are scrubbed until a polished contamination free surface is obtained and pressed together. The convex pressure gradient chuck exerts a higher pressure at the center of the wafer than at the periphery of the wafer.
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公开(公告)号：US4494523A
公开(公告)日：1985-01-22
申请号：US520776
申请日：1983-08-05
申请人： Raymond C. Wells
发明人： Raymond C. Wells
CPC分类号： B28D5/045 , Y10T83/706 , Y10T83/9292
摘要： An improved wire saw is disclosed in which a linear wire storage means comprises a vertically moving carriage. The carriage is supported by the wire, thereby improving the efficiency and production rate of the saw.
摘要翻译： 公开了一种改进的线锯，其中线性线存储装置包括垂直移动的滑架。 滑架由导线支撑，从而提高锯的效率和生产率。
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公开(公告)号：US5413952A
公开(公告)日：1995-05-09
申请号：US190393
申请日：1994-02-02
IPC分类号： H01L21/02 , H01L21/20 , H01L21/74 , H01L21/762 , H01L21/265 , H01L21/76
CPC分类号： H01L21/76243 , H01L21/743 , Y10S148/012
摘要： A method for forming a direct wafer bonded structure having a buried high temperature metal nitride layer (16) and improved thermal conductivity is provided. By patterning the high temperature metal nitride layer (16) with a non-oxidizing photoresist stripper and absent a photoresist hardening step, adhesion between the high temperature metal nitride layer (16) and a dielectric layer (17, 27) subsequently formed over the high temperature metal nitride layer (16) is significantly improved. The dielectric layer (17, 27) will adhere to the high temperature metal nitride layer (16) in high temperature environments. In addition, a direct wafer bonded structure having a buried high temperature metal nitride layer (16) and improved thermal conductivity is provided. The structure is suitable for power, logic, and high frequency integrated circuit devices.
摘要翻译： 提供了一种用于形成具有掩埋的高温金属氮化物层（16）和改善的导热性的直接晶片接合结构的方法。 通过用非氧化性光致抗蚀剂剥离剂图案化高温金属氮化物层（16），并且不存在光致抗蚀剂硬化步骤，高温金属氮化物层（16）和介电层（17,27）之间的粘合随后在高 高温金属氮化物层（16）显着改善。 介电层（17,27）将在高温环境下粘附到高温金属氮化物层（16）上。 此外，提供了具有掩埋的高温金属氮化物层（16）和改善的导热性的直接晶片接合结构。 该结构适用于电源，逻辑和高频集成电路器件。
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公开(公告)号：US5389579A
公开(公告)日：1995-02-14
申请号：US43117
申请日：1993-04-05
申请人： Raymond C. Wells
发明人： Raymond C. Wells
IPC分类号： B24B37/04 , H01L21/302 , H01L21/60
CPC分类号： B24B37/042 , Y10S438/959
摘要： A method for polishing a single side of a semiconductor wafer (31) is disclosed for improving wafer flatness. A protective layer (32) is formed on one side of the semiconductor wafer (31). The semiconductor wafer (31) is polished on both sides concurrently using double sided polishing equipment (38,41). The protective layer (32) prevents a surface (37) of the semiconductor wafer (31) from being polished while the other unprotected surface (36) is polished thereby producing a single sided polished wafer.
摘要翻译： 公开了一种用于抛光半导体晶片（31）的单面的方法，用于提高晶片的平整度。 在半导体晶片（31）的一侧上形成保护层（32）。 使用双面抛光设备（38,41）同时在两侧上抛光半导体晶片（31）。 保护层（32）防止半导体晶片（31）的表面（37）被抛光，而另一个未保护的表面（36）被抛光，从而产生单面抛光晶片。
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公开(公告)号：US6113721A
公开(公告)日：2000-09-05
申请号：US368078
申请日：1995-01-03
IPC分类号： B24B9/06 , H01L21/18 , H01L21/304 , H01L21/762 , H01L29/06 , B32B31/00 , H01L21/46
CPC分类号： H01L21/304 , B24B9/065 , H01L21/187 , H01L21/76251 , H01L29/0657
摘要： Removing a portion of an active wafer (12) at the edge (18) after the active wafer (12) is bonded to a base wafer (10) prevents chipping of the edge of the active wafer during thinning of the active wafer (12). Grinding and polishing of the edges of the active wafer (12) is preferably performed.
摘要翻译： 在活性晶片（12）接合到基底晶片（10）之后，在边缘（18）处移除活动晶片（12）的一部分，以防止在活性晶片（12）变薄期间碎片化有源晶片的边缘， 。 优选进行活性晶片（12）的边缘的研磨和抛光。
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公开(公告)号：US5314107A
公开(公告)日：1994-05-24
申请号：US999342
申请日：1992-12-31
CPC分类号： H01L21/68 , H01L21/67092 , Y10S414/138
摘要： A method for joining a number of first and second wafers (11,12) having one polished surface in preparation for direct wafer bonding is provided. The method involves placing a number of first (11) and the same number of second (12) wafers into slots (16) of a retainer (14) so that each of the polished surfaces of the number of first wafers (11) is forced to contact one of the polished surfaces of the number of second wafers (12).
摘要翻译： 提供了一种用于连接具有一个抛光表面的多个第一和第二晶片（11,12）的准备用于直接晶片接合的方法。 该方法包括将多个第一（11）和相同数量的第二（12）晶片放置在保持器（14）的狭槽（16）中，使得第一晶片（11）的数量的每个抛光表面被强制 以接触多个第二晶片（12）的抛光表面之一。
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