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    Adhesion to copper and copper electromigration resistance
    2.
    发明授权
    Adhesion to copper and copper electromigration resistance 有权
    铜和铜的电迁移阻力

    公开(公告)号：US08043976B2

    公开(公告)日：2011-10-25

    申请号：US12406467

    申请日：2009-03-18

    申请人： Raymond Nicholas Vrtis ,  Laura M. Matz ,  Mark Leonard O'Neill

    发明人： Raymond Nicholas Vrtis ,  Laura M. Matz ,  Mark Leonard O'Neill

    IPC分类号： H01L23/52

    CPC分类号： H01L21/76849 ,  C23C16/02 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/76834 ,  H01L21/76883 ,  Y10T428/13

    摘要： The present invention relates to the improved adhesion between a patterned conductive metal layer, usually a copper layer, and a patterned barrier dielectric layer. The structure with the improved adhesion comprises an adhesion layer between a patterned barrier dielectric layer and a patterned conductive metal layer. The adhesion layer improves adhesion between the metal layer and the barrier layer without increasing the copper bulk electrical resistance. The method of making the structure with the improved adhesion comprises steps of thermal expositing the patterned conductive metal layer to an organometallic precursor to deposit an adhesion layer at least on the top of the patterned conductive metal layer.

    摘要翻译： 本发明涉及图案化导电金属层（通常为铜层）和图案化势垒介电层之间的改进的粘合性。 具有改进的粘附性的结构包括在图案化阻挡介电层和图案化的导电金属层之间的粘合层。 粘附层改善了金属层和阻挡层之间的粘附性，而不增加铜体电阻。 制造具有改善的粘合性的结构的方法包括将图案化的导电金属层热展开到有机金属前体的步骤，以至少在图案化的导电金属层的顶部沉积粘附层。

    Process for restoring dielectric properties
    3.
    发明授权
    Process for restoring dielectric properties 有权
    恢复介电性能的方法

    公开(公告)号：US08283260B2

    公开(公告)日：2012-10-09

    申请号：US12540395

    申请日：2009-08-13

    申请人： Scott Jeffrey Weigel ,  Mark Leonard O'Neill ,  Mary Kathryn Haas ,  Laura M. Matz ,  Glenn Michael Mitchell ,  Aiping Wu ,  Raymond Nicholas Vrtis ,  John Giles Langan

    发明人： Scott Jeffrey Weigel ,  Mark Leonard O'Neill ,  Mary Kathryn Haas ,  Laura M. Matz ,  Glenn Michael Mitchell ,  Aiping Wu ,  Raymond Nicholas Vrtis ,  John Giles Langan

    IPC分类号： H01L21/302

    CPC分类号： H01L21/3105

    摘要： A method for preparing an interlayer dielectric to minimize damage to the interlayer's dielectric properties, the method comprising the steps of: depositing a layer of a silicon-containing dielectric material onto a substrate, wherein the layer has a first dielectric constant and wherein the layer has at least one surface; providing an etched pattern in the layer by a method that includes at least one etch process and exposure to a wet chemical composition to provide an etched layer, wherein the etched layer has a second dielectric constant, and wherein the wet chemical composition contributes from 0 to 40% of the second dielectric constant; contacting the at least one surface of the layer with a silicon-containing fluid; optionally removing a first portion of the silicon-containing fluid such that a second portion of the silicon-containing fluid remains in contact with the at least one surface of the layer; and exposing the at least one surface of the layer to UV radiation and thermal energy, wherein the layer has a third dielectric constant that is restored to a value that is at least 90% restored relative to the second dielectric constant.

    摘要翻译： 一种用于制备层间电介质以最小化对中间层介电特性的损害的方法，所述方法包括以下步骤：在衬底上沉积含硅介电材料的层，其中所述层具有第一介电常数，并且其中所述层具有 至少一个表面; 通过包括至少一个蚀刻工艺和暴露于湿化学组合物以提供蚀刻层的方法在该层中提供蚀刻图案，其中所述蚀刻层具有第二介电常数，并且其中所述湿化学成分贡献于0至 40％的第二介电常数; 使层的至少一个表面与含硅流体接触; 任选地除去含硅流体的第一部分，使得含硅流体的第二部分保持与层的至少一个表面接触; 以及将所述层的所述至少一个表面暴露于UV辐射和热能，其中所述层具有恢复到相对于所述第二介电常数恢复至少90％的值的第三介电常数。

    Process For Restoring Dielectric Properties
    7.
    发明申请
    Process For Restoring Dielectric Properties 有权
    恢复介电性能的工艺

    公开(公告)号：US20100041234A1

    公开(公告)日：2010-02-18

    申请号：US12540395

    申请日：2009-08-13

    申请人： Scott Jeffrey Weigel ,  Mark Leonard O'Neill ,  Mary Kathryn Haas ,  Laura M. Matz ,  Glenn Michael Mitchell ,  Aiping Wu ,  Raymond Nicholas Vrtis ,  John Giles Langan

    发明人： Scott Jeffrey Weigel ,  Mark Leonard O'Neill ,  Mary Kathryn Haas ,  Laura M. Matz ,  Glenn Michael Mitchell ,  Aiping Wu ,  Raymond Nicholas Vrtis ,  John Giles Langan

    IPC分类号： H01L21/311

    CPC分类号： H01L21/3105

    摘要： A method for preparing an interlayer dielectric to minimize damage to the interlayer's dielectric properties, the method comprising the steps of: depositing a layer of a silicon-containing dielectric material onto a substrate, wherein the layer has a first dielectric constant and wherein the layer has at least one surface; providing an etched pattern in the layer by a method that includes at least one etch process and exposure to a wet chemical composition to provide an etched layer, wherein the etched layer has a second dielectric constant, and wherein the wet chemical composition contributes from 0 to 40% of the second dielectric constant; contacting the at least one surface of the layer with a silicon-containing fluid; optionally removing a first portion of the silicon-containing fluid such that a second portion of the silicon-containing fluid remains in contact with the at least one surface of the layer; and exposing the at least one surface of the layer to UV radiation and thermal energy, wherein the layer has a third dielectric constant that is restored to a value that is at least 90% restored relative to the second dielectric constant.

    摘要翻译： 一种用于制备层间电介质以最小化对中间层介电特性的损害的方法，所述方法包括以下步骤：在衬底上沉积含硅介电材料的层，其中所述层具有第一介电常数，并且其中所述层具有 至少一个表面; 通过包括至少一个蚀刻工艺和暴露于湿化学组合物以提供蚀刻层的方法在该层中提供蚀刻图案，其中所述蚀刻层具有第二介电常数，并且其中所述湿化学成分贡献于0至 40％的第二介电常数; 使层的至少一个表面与含硅流体接触; 任选地除去含硅流体的第一部分，使得含硅流体的第二部分保持与层的至少一个表面接触; 以及将所述层的所述至少一个表面暴露于UV辐射和热能，其中所述层具有恢复到相对于所述第二介电常数恢复至少90％的值的第三介电常数。

    Adhesion to Copper and Copper Electromigration Resistance
    8.
    发明申请
    Adhesion to Copper and Copper Electromigration Resistance 有权
    铜和铜的电迁移阻力

    公开(公告)号：US20090236745A1

    公开(公告)日：2009-09-24

    申请号：US12406467

    申请日：2009-03-18

    申请人： Raymond Nicholas Vrtis ,  Laura M. Matz ,  Mark Leonard O'Neill

    发明人： Raymond Nicholas Vrtis ,  Laura M. Matz ,  Mark Leonard O'Neill

    IPC分类号： H01L23/52 ,  H01L21/302 ,  B32B1/06

    CPC分类号： H01L21/76849 ,  C23C16/02 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/76834 ,  H01L21/76883 ,  Y10T428/13

    摘要： The present invention relates to the improved adhesion between a patterned conductive metal layer, usually a copper layer, and a patterned barrier dielectric layer. The structure with the improved adhesion comprises an adhesion layer between a patterned barrier dielectric layer and a patterned conductive metal layer. The adhesion layer improves adhesion between the metal layer and the barrier layer without increasing the copper bulk electrical resistance. The method of making the structure with the improved adhesion comprises steps of thermal expositing the patterned conductive metal layer to an organometallic precursor to deposit an adhesion layer at least on the top of the patterned conductive metal layer.

    摘要翻译： 本发明涉及图案化导电金属层（通常为铜层）和图案化势垒介电层之间的改进的粘合性。 具有改进的粘附性的结构包括在图案化阻挡介电层和图案化的导电金属层之间的粘合层。 粘附层改善了金属层和阻挡层之间的粘附性，而不增加铜体电阻。 制造具有改善的粘合性的结构的方法包括将图案化的导电金属层热展开到有机金属前体的步骤，以至少在图案化的导电金属层的顶部沉积粘附层。

    Low k precursors providing superior integration attributes
    9.
    发明授权
    Low k precursors providing superior integration attributes 有权
    提供优异的集成属性的低k前体

    公开(公告)号：US08753986B2

    公开(公告)日：2014-06-17

    申请号：US12969042

    申请日：2010-12-15

    申请人： Mary Kathryn Haas ,  Raymond Nicholas Vrtis ,  Laura M. Matz

    发明人： Mary Kathryn Haas ,  Raymond Nicholas Vrtis ,  Laura M. Matz

    IPC分类号： H01L21/31

    CPC分类号： H01L21/02214 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348

    摘要： A deposition for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including one precursor of an organosilane or an organosiloxane, and a porogen distinct from the precursor, wherein the porogen is aromatic in nature; applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a film, containing the porogen; and removing substantially all of the organic material by UV radiation to provide the porous film with pores and a dielectric constant less than 2.6.

    摘要翻译： 一种用于生产多孔有机硅玻璃膜的沉积物，其特征在于，包括：在真空室中引入包括有机硅烷或有机硅氧烷的一种前体的气态试剂和与前体不同的致孔剂，其中致孔剂本质上是芳族的; 向室中的气态试剂施加能量以诱导气态试剂沉积含有致孔剂的膜的反应; 并通过紫外线辐射去除基本上所有的有机材料，以提供具有小于2.6的孔隙和介电常数的多孔膜。

    LOW K PRECURSORS PROVIDING SUPERIOR INTEGRATION ATTRIBUTES
    10.
    发明申请
    LOW K PRECURSORS PROVIDING SUPERIOR INTEGRATION ATTRIBUTES 有权
    提供高级整合属性的低K前提

    公开(公告)号：US20110308937A1

    公开(公告)日：2011-12-22

    申请号：US12969042

    申请日：2010-12-15

    申请人： Mary Kathryn Haas ,  Raymond Nicholas Vrtis ,  Laura M. Matz

    发明人： Mary Kathryn Haas ,  Raymond Nicholas Vrtis ,  Laura M. Matz

    IPC分类号： C09D183/04 ,  C23C14/10 ,  C08J7/18

    CPC分类号： H01L21/02214 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348

    摘要： A deposition for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including one precursor of an organosilane or an organosiloxane, and a porogen distinct from the precursor, wherein the porogen is aromatic in nature; applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a film, containing the porogen; and removing substantially all of the organic material by UV radiation to provide the porous film with pores and a dielectric constant less than 2.6.

    摘要翻译： 一种用于生产多孔有机硅玻璃膜的沉积物，其特征在于，包括：在真空室中引入包括有机硅烷或有机硅氧烷的一种前体的气态试剂和与前体不同的致孔剂，其中致孔剂本质上是芳族的; 向室中的气态试剂施加能量以诱导气态试剂沉积含有致孔剂的膜的反应; 并通过紫外线辐射去除基本上所有的有机材料，以提供具有小于2.6的孔隙和介电常数的多孔膜。