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公开(公告)号：US20170162958A1
公开(公告)日：2017-06-08
申请号：US15201851
申请日：2016-07-05
Applicant: Raytheon Company
Inventor： Christopher M. Laighton , Istvan Rodriguez , Alan J. Bielunis
CPC classification number: H01R24/50 , H01R13/6596 , H01R2103/00
Abstract: A high power RF connector receptacle having a solder able pin, an outer connector receptacle shell and a high breakdown voltage dielectric such as Silicon Carbide. The connector receptacle can be completed as a stepped process where the Silicon Carbide substrate can be mounted to the package, the pin can be dropped into place and soldered, and then the outer shell can be soldered onto the SiC substrate. Alternatively, the SiC, pin and outer shell can be assembled as a subassembly and then soldered to the package. The combination of SiC and solder gives a hermetic seal to the package. In addition, the SiC has an extraordinarily high dielectric breakdown voltage for high power connections,
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公开(公告)号：US09755333B2
公开(公告)日：2017-09-05
申请号：US15201851
申请日：2016-07-05
Applicant: Raytheon Company
Inventor： Christopher M. Laighton , Istvan Rodriguez , Alan J. Bielunis
CPC classification number: H01R24/50 , H01R13/6596 , H01R2103/00
Abstract: A high power RF connector receptacle having a solderable pin, an outer connector receptacle shell and a high breakdown voltage dielectric such as Silicon Carbide. The connector receptacle can be completed as a stepped process where the Silicon Carbide substrate can be mounted to the package, the pin can be dropped into place and soldered, and then the outer shell can be soldered onto the SiC substrate. Alternatively, the SiC, pin and outer shell can be assembled as a subassembly and then soldered to the package. The combination of SiC and solder gives a hermetic seal to the package. In addition, the SiC has an extraordinarily high dielectric breakdown voltage for high power connections.
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公开(公告)号：US10277176B2
公开(公告)日：2019-04-30
申请号：US15893269
申请日：2018-02-09
Applicant: Raytheon Company
Inventor： John P. Bettencourt , Alan J. Bielunis , Istvan Rodriguez , Zhaoyang C. Wang
Abstract: A circuit having an amplifier, comprising: a depletion mode transistor having a source electrode coupled to a reference potential; a drain electrode coupled to a potential more positive than the reference potential; and a gate electrode for coupling to an input signal. The circuit includes a bias circuit, comprising: a current source; and biasing circuitry coupled to the current source and between the potential more positive than the reference potential and a potential more negative than the reference potential. A control circuit is connected to the current source for controlling the amount of current produced by the current source to the biasing circuitry.
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公开(公告)号：US20180167041A1
公开(公告)日：2018-06-14
申请号：US15893269
申请日：2018-02-09
Applicant: Raytheon Company
Inventor： John P. Bettencourt , Alan J. Bielunis , Istvan Rodriguez , Zhaoyang C. Wang
CPC classification number: H03F3/195 , H03F1/301 , H03F1/303 , H03F3/193 , H03F3/213 , H03F3/72 , H03F2200/18 , H03F2200/258 , H03F2200/27 , H03F2200/451 , H03F2203/7203
Abstract: A circuit having an amplifier, comprising: a depletion mode transistor having a source electrode coupled to a reference potential; a drain electrode coupled to a potential more positive than the reference potential; and a gate electrode for coupling to an input signal. The circuit includes a bias circuit, comprising: a current source; and biasing circuitry coupled to the current source and between the potential more positive than the reference potential and a potential more negative than the reference potential. A control circuit is connected to the current source for controlling the amount of current produced by the current source to the biasing circuitry.
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公开(公告)号：US09960740B2
公开(公告)日：2018-05-01
申请号：US15175610
申请日：2016-06-07
Applicant: Raytheon Company
Inventor： John P. Bettencourt , Alan J. Bielunis , Istvan Rodriguez , Zhaoyang C. Wang
CPC classification number: H03F3/195 , H03F1/301 , H03F1/303 , H03F3/193 , H03F3/213 , H03F3/72 , H03F2200/18 , H03F2200/258 , H03F2200/27 , H03F2200/451 , H03F2203/7203
Abstract: A circuit having an amplifier, comprising: a depletion mode transistor having a source electrode coupled to a reference potential; a drain electrode coupled to a potential more positive than the reference potential; and a gate electrode for coupling to an input signal. The circuit includes a bias circuit, comprising: a current source; and biasing circuitry coupled to the current source and between the potential more positive than the reference potential and a potential more negative than the reference potential. A control circuit is connected to the current source for controlling the amount of current produced by the current source to the biasing circuitry.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20170271281A1
公开(公告)日：2017-09-21
申请号：US15201905
申请日：2016-07-05
Applicant: Raytheon Company
Inventor： Istvan Rodriguez , Christopher M. Laighton , Alan J. Bielunis
IPC: H01L23/66 , H03F3/195 , H01L27/088 , H01L23/48 , H01L29/20
CPC classification number: H01L23/66 , G01S7/03 , G01S7/032 , H01L21/76898 , H01L23/481 , H01L23/5228 , H01L23/647 , H01L28/20 , H01L29/2003 , H01L29/4175 , H01L2223/6616 , H01L2223/6627 , H01L2223/6655 , H01L2223/6661 , H01L2223/6683 , H03F3/195 , H03F2200/105 , H03F2200/211 , H03F2200/294 , H03F2200/451
Abstract: A microwave amplifier having a field effect transistor formed on an upper surface of a substrate. A de-Q'ing section connected to the field effect transistor includes: a de-Q'ing resistive via that passes through the substrate; and a de-Q'ing capacitor having one plate thereof connected a ground plane conductor through the de-Q'ing resistive via.
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公开(公告)号：US20180130888A1
公开(公告)日：2018-05-10
申请号：US15346224
申请日：2016-11-08
Applicant: Raytheon Company
Inventor： Alan J. Bielunis , Istvan Rodriguez , Christopher M. Laighton
IPC: H01L29/417 , H01L27/02 , H01L27/088 , H01L29/06 , H01L29/78 , H01L29/423
CPC classification number: H01L29/41758 , H01L27/0207 , H01L27/088 , H01L29/0692 , H01L29/0696 , H01L29/20 , H01L29/4236 , H01L29/4238 , H01L29/78 , H01L29/7827 , H01L29/812
Abstract: A Field Effect Transistor (FET) having a substrate; a plurality of active regions disposed on the substrate; and a laterally extending finger-like control electrode disposed on a portion of a surface of the substrate. The active regions are laterally spaced one from the other successively along the laterally extending finger-like control electrode. The laterally extending finger-like control electrode controls a flow of comers through each one of the plurality of active regions between a source electrode and a drain electrode.
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公开(公告)号：US09698144B2
公开(公告)日：2017-07-04
申请号：US14830148
申请日：2015-08-19
Applicant: Raytheon Company
Inventor： Istvan Rodriguez , Christopher M. Laighton , Alan J. Bielunis
IPC: H01L27/088 , H01L23/66 , H01L23/48 , H01L29/06 , H01L29/417 , H01L29/423
CPC classification number: H01L27/088 , H01L23/481 , H01L23/66 , H01L29/0696 , H01L29/2003 , H01L29/41758 , H01L29/42316 , H01L29/4238 , H01L29/812 , H01L2223/6622 , H01L2223/6627 , H01L2224/48091 , H01L2924/00014
Abstract: A Field Effect Transistor (FET) having a plurality of FET cells having a plurality of source pads, a plurality of drain pads, and a plurality of gate electrodes disposed on a surface of a substrate; each one of the FET cells having a corresponding one of the gate electrodes disposed between one of the source pads and one of the drain pads. The FET includes; a gate contact connected to the gate electrode of each one of the FET cells; a drain contact connected to the drain pad of each one of the FET cells; and a source contact connected to source pad of each one of the FET cells. The cells are disposed in a loop configuration.
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9.发明授权Microwave monolithic integrated circuit (MMIC) having integrated high power thermal dissipating load 有权具有集成大功率散热负载的微波单片集成电路（MMIC）公开(公告)号：US09589917B1
公开(公告)日：2017-03-07
申请号：US15075874
申请日：2016-03-21
Applicant: Raytheon Company
Inventor： Istvan Rodriguez , Christopher M. Laighton , Alan J. Bielunis
IPC: H01L23/66 , H01L23/64 , H01L23/48 , H01L27/085 , H01L29/20
CPC classification number: H01L23/66 , G01S7/03 , H01L21/76898 , H01L23/481 , H01L23/5228 , H01L23/647 , H01L28/20 , H01L29/2003 , H01L29/4175 , H01L2223/6616 , H01L2223/6627 , H01L2223/6661 , H01L2223/6683 , H01L2224/05554 , H01L2224/48195
Abstract: A Microwave Monolithic Integrated Circuit (MMIC) having an integrated high power load. The MMIC includes a microwave transmission line and a resistive load coupled to a terminating end of the microwave transmission line. The resistive load comprises a hollow resistive material disposed on sidewalls of a via passing through a substrate, the resistive material having an upper portion electrically connected to a terminating end of a strip conductor of the microwave transmission line strip conductor and a lower portion electrically connected to the ground plane.
Abstract translation: 具有集成大功率负载的微波单片集成电路（MMIC）。 MMIC包括耦合到微波传输线的终端的微波传输线和电阻负载。 电阻负载包括设置在通过衬底的通孔的侧壁上的中空电阻材料，电阻材料具有电连接到微波传输线条带状导体的带状导体的终端的上部，以及电连接到 地面飞机。
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公开(公告)号：US20160373074A1
公开(公告)日：2016-12-22
申请号：US15175610
申请日：2016-06-07
Applicant: Raytheon Company
Inventor： John P. Bettencourt , Alan J. Bielunis , Istvan Rodriguez , Zhaoyang C. Wang
CPC classification number: H03F3/195 , H03F1/301 , H03F1/303 , H03F3/193 , H03F3/213 , H03F3/72 , H03F2200/18 , H03F2200/258 , H03F2200/27 , H03F2200/451 , H03F2203/7203
Abstract: A circuit having an amplifier, comprising: a depletion mode transistor having a source electrode coupled to a reference potential; a drain electrode coupled to a potential more positive than the reference potential; and a gate electrode for coupling to an input signal. The circuit includes a bias circuit, comprising: a current source; and biasing circuitry coupled to the current source and between the potential more positive than the reference potential and a potential more negative than the reference potential. A control circuit is connected to the current source for controlling the amount of current produced by the current source to the biasing circuitry.
Abstract translation: 一种具有放大器的电路，包括：耗尽型晶体管，具有耦合到参考电位的源电极; 耦合到比参考电位更正的电位的漏电极; 以及用于耦合到输入信号的栅电极。 该电路包括偏置电路，包括：电流源; 以及耦合到电流源并且在比参考电位更正的电位和比参考电位更负的电位的偏置电路。 控制电路连接到电流源，用于控制由电流源产生的电流量到偏置电路。
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