公开(公告)号：US20190198632A1

公开(公告)日：2019-06-27

申请号：US16189247

申请日：2018-11-13

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Takao KAMOSHIMA ,  Mitsuhiro ONUMA ,  Hiroaki OSAKA

IPC: H01L29/423 ,  H01L29/792 ,  H01L29/66 ,  H01L29/08 ,  H01L29/51 ,  H01L21/28 ,  H01L21/22 ,  H01L21/768

CPC classification number: H01L29/42344 ,  H01L21/22 ,  H01L21/28282 ,  H01L21/76897 ,  H01L29/0847 ,  H01L29/517 ,  H01L29/66833 ,  H01L29/7833 ,  H01L29/792

Abstract: To provide a semiconductor device capable of preventing short circuit between first and second gate electrodes. The semiconductor device has a semiconductor substrate, gate insulating film, first gate electrode, stacked film, and second gate electrode. The semiconductor substrate has a first surface including a first region and a second region adjacent thereto. The gate insulating film is placed on the semiconductor substrate in the first region. The first gate electrode is placed on the gate insulating film and has a side surface. The stacked film has a first oxide film on the second region and on the side surface of the first gate electrode, a nitride film on the first oxide film, and a second oxide film on the nitride film. The second gate electrode is placed on the stacked film in the second region. The side surface above the second gate electrode includes a protrusion toward the side of the second gate electrode.

公开(公告)号：US20150200158A1

公开(公告)日：2015-07-16

申请号：US14592730

申请日：2015-01-08

Applicant: Renesas Electronics Corporation

Inventor： Ayaka OKUMURA ,  Katsuhiko HOTTA ,  Yoshinori KONDO ,  Hiroaki OSAKA

IPC: H01L23/528 ,  H01L23/522 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/02 ,  H01L23/00 ,  H01L27/088 ,  H01L23/532

CPC classification number: H01L23/5226 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/02271 ,  H01L21/321 ,  H01L21/76801 ,  H01L21/76834 ,  H01L21/76838 ,  H01L22/14 ,  H01L23/528 ,  H01L23/53214 ,  H01L23/53223 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/43 ,  H01L24/45 ,  H01L24/85 ,  H01L27/088 ,  H01L27/092 ,  H01L2224/02166 ,  H01L2224/05624 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/43 ,  H01L2224/4502 ,  H01L2224/45144 ,  H01L2224/85375 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/01014

Abstract: Characteristics of a semiconductor device are improved. An opening that exposes a pad region of a top-layer wiring containing aluminum is formed in a protection film over the wiring, and aluminum nitride is formed on a surface of the exposed wiring. Additionally, a silicon nitride film is formed on a back surface of a semiconductor substrate having the wiring. As described above, foreign substances generated over the pad region due to the silicon nitride film on the back surface of the semiconductor substrate can be prevented by providing an aluminum nitride film over the pad region. Particularly, even in a case of requiring time before an inspection step and a bonding step, after a formation step of the pad region, formation reaction of the foreign substances can be prevented in the pad region, and the characteristics of the semiconductor device can be improved.

Abstract translation: 提高了半导体器件的特性。 在布线的保护膜上形成露出包含铝的顶层布线的焊盘区域的开口，并且在暴露的布线的表面上形成氮化铝。 此外，在具有布线的半导体衬底的背面上形成氮化硅膜。 如上所述，通过在焊盘区域上设置氮化铝膜，可以防止由于半导体衬底的背面上的氮化硅膜而在衬垫区域上产生的异物。 特别地，即使在检查步骤和接合步骤之前需要时间的情况下，在焊盘区域的形成步骤之后，可以在焊盘区域中防止异物的形成反应，并且半导体器件的特性可以 改进。

公开(公告)号：US20160358853A1

公开(公告)日：2016-12-08

申请号：US15238471

申请日：2016-08-16

Applicant: Renesas Electronics Corporation

Inventor： Ayaka OKUMURA ,  Katsuhiko HOTTA ,  Yoshinori KONDO ,  Hiroaki OSAKA

IPC: H01L23/522 ,  H01L23/532 ,  H01L27/088 ,  H01L23/528 ,  H01L21/02 ,  H01L23/00

CPC classification number: H01L23/5226 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/02271 ,  H01L21/321 ,  H01L21/76801 ,  H01L21/76834 ,  H01L21/76838 ,  H01L22/14 ,  H01L23/528 ,  H01L23/53214 ,  H01L23/53223 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/43 ,  H01L24/45 ,  H01L24/85 ,  H01L27/088 ,  H01L27/092 ,  H01L2224/02166 ,  H01L2224/05624 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/43 ,  H01L2224/4502 ,  H01L2224/45144 ,  H01L2224/85045 ,  H01L2224/85375 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/01014

Abstract: A semiconductor device includes a silicon nitride film formed above a front surface side of a semiconductor substrate, a first wiring formed above the silicon nitride film, a second wiring containing aluminum formed over the first wiring via a first insulating film, a second insulating film having an opening over the second wiring, and aluminum nitride formed over the second wiring at a bottom surface of the opening.

Abstract translation: 半导体器件包括在半导体衬底的正面侧形成的氮化硅膜，在氮化硅膜上方形成的第一布线，经由第一绝缘膜形成在第一布线上的含有铝的第二布线，具有 在第二布线上的开口，以及形成在开口的底表面上的第二布线上的氮化铝。