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公开(公告)号：US07378356B2
公开(公告)日：2008-05-27
申请号：US10101863
申请日：2002-03-16
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C14/345 , C23C14/0036 , C23C14/081 , C23C14/10 , C23C14/3414 , C23C14/35 , C23C14/354 , C23C14/5806 , C23C14/5873 , G02B6/132 , H01J37/32412 , H01J37/34
摘要： A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed DC power supply. Films deposited utilizing the reactor have controllable material properties such as the index of refraction. Optical components such as waveguide amplifiers and multiplexers can be fabricated processes performed on a reactor according to the present inention.
摘要翻译： 提出了一种用于溅射氧化膜的偏压脉冲直流电抗器。 偏置脉冲DC电抗器通过滤波器将特定频率的特定频率的脉冲DC耦合到目标，滤波器滤除施加到衬底的偏置功率的影响，保护脉冲DC电源。 使用反应器沉积的膜具有可控的材料特性，例如折射率。 可以使用根据本发明的反应器上进行的工艺来制造诸如波导放大器和多路复用器的光学部件。
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公开(公告)号：US08728285B2
公开(公告)日：2014-05-20
申请号：US10850968
申请日：2004-05-20
IPC分类号： C23C14/34
CPC分类号： H01B13/0026 , C23C14/0036 , C23C14/0042 , C23C14/086
摘要： A method of deposition of a transparent conductive film from a metallic target is presented. A method of forming a transparent conductive oxide film according to embodiments of the present invention include depositing the transparent conductive oxide film in a pulsed DC reactive ion process with substrate bias, and controlling at least one process parameter to affect at least one characteristic of the conductive oxide film. The resulting transparent oxide film, which in some embodiments can be an indium-tin oxide film, can exhibit a wide range of material properties depending on variations in process parameters. For example, varying the process parameters can result in a film with a wide range of resistive properties and surface smoothness of the film.
摘要翻译： 提出了一种从金属靶沉积透明导电膜的方法。 根据本发明的实施方案的形成透明导电氧化物膜的方法包括在具有衬底偏压的脉冲DC反应离子过程中沉积透明导电氧化物膜，并且控制至少一个工艺参数以影响导电的至少一个特性 氧化膜。 所得到的透明氧化物膜（在一些实施方案中可以是铟锡氧化物膜）可以根据工艺参数的变化显示宽范围的材料性质。 例如，改变工艺参数可以产生具有宽范围的电阻性质和膜的表面平滑度的膜。
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公开(公告)号：US07262131B2
公开(公告)日：2007-08-28
申请号：US11228805
申请日：2005-09-16
IPC分类号： H01L21/285
CPC分类号： C23C14/345 , C23C14/35 , H01L21/02145 , H01L21/02164 , H01L21/02178 , H01L21/02186 , H01L21/02192 , H01L21/02194 , H01L21/022 , H01L21/02266 , H01L21/02304 , H01L21/31604 , H01L21/31608 , H01L21/31612 , H01L21/31616 , H01L21/31637 , H01L21/31691 , H01L51/5253 , H01L51/5256 , H01L51/5265 , Y10S438/958
摘要： In accordance with the present invention, a dielectric barrier layer is presented. A barrier layer according to the present invention includes a densified amorphous dielectric layer deposited on a substrate by pulsed-DC, substrate biased physical vapor deposition, wherein the densified amorphous dielectric layer is a barrier layer. A method of forming a barrier layer according to the present inventions includes providing a substrate and depositing a highly densified, amorphous, dielectric material over the substrate in a pulsed-dc, biased, wide target physical vapor deposition process. Further, the process can include performing a soft-metal breath treatment on the substrate. Such barrier layers can be utilized as electrical layers, optical layers, immunological layers, or tribological layers.
摘要翻译： 根据本发明，提供介电阻挡层。 根据本发明的阻挡层包括通过脉冲DC，衬底偏置物理气相沉积沉积在衬底上的致密非晶介质层，其中致密的非晶介质层是阻挡层。 根据本发明的形成阻挡层的方法包括在脉冲直流偏置的宽目标物理气相沉积工艺中在衬底上提供衬底和沉积高度致密化的非晶形介电材料。 此外，该方法可以包括在基材上进行软金属呼吸处理。 这样的阻挡层可以用作电层，光学层，免疫层或摩擦学层。
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公开(公告)号：US08105466B2
公开(公告)日：2012-01-31
申请号：US11191643
申请日：2005-07-27
CPC分类号： C23C14/345 , C23C14/0036 , C23C14/081 , C23C14/10 , C23C14/3414 , C23C14/35 , C23C14/354 , C23C14/5806 , C23C14/5873 , G02B6/132 , H01J37/32412 , H01J37/34
摘要： A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed DC power supply. Films deposited utilizing the reactor have controllable material properties such as the index of refraction. Optical components such as waveguide amplifiers and multiplexers can be fabricated using processes performed on a reactor according to the present invention.
摘要翻译： 提出了一种用于溅射氧化膜的偏压脉冲直流电抗器。 偏置脉冲DC电抗器通过滤波器将特定频率的特定频率的脉冲DC耦合到目标，滤波器滤除施加到衬底的偏置功率的影响，保护脉冲DC电源。 使用反应器沉积的膜具有可控的材料特性，例如折射率。 可以使用在根据本发明的反应器上进行的工艺来制造诸如波导放大器和多路复用器的光学部件。
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公开(公告)号：US07544276B2
公开(公告)日：2009-06-09
申请号：US11228834
申请日：2005-09-16
IPC分类号： C23C14/34
CPC分类号： C23C14/345 , C23C14/0036 , C23C14/081 , C23C14/10 , C23C14/3414 , C23C14/35 , C23C14/354 , C23C14/5806 , C23C14/5873 , G02B6/132 , H01J37/32412 , H01J37/34
摘要： A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed DC power supply. Films deposited utilizing the reactor have controllable material properties such as the index of refraction. Optical components such as waveguide amplifiers and multiplexers can be fabricated using processes performed on a reactor according to the present invention.
摘要翻译： 提出了一种用于溅射氧化膜的偏压脉冲直流电抗器。 偏置脉冲DC电抗器通过滤波器将特定频率的特定频率的脉冲DC耦合到目标，滤波器滤除施加到衬底的偏置功率的影响，保护脉冲DC电源。 使用反应器沉积的膜具有可控的材料特性，例如折射率。 可以使用在根据本发明的反应器上进行的工艺来制造诸如波导放大器和多路复用器的光学部件。
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公开(公告)号：US07413998B2
公开(公告)日：2008-08-19
申请号：US11228717
申请日：2005-09-16
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C14/345 , C23C14/0036 , C23C14/081 , C23C14/10 , C23C14/3414 , C23C14/35 , C23C14/354 , C23C14/5806 , C23C14/5873 , G02B6/132 , H01J37/32412 , H01J37/34
摘要： A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed DC power supply. Films deposited utilizing the reactor have controllable material properties such as the index of refraction. Optical components such as waveguide amplifiers and multiplexers can be fabricated using processes performed on a reactor according to the present invention.
摘要翻译： 提出了一种用于溅射氧化膜的偏压脉冲直流电抗器。 偏置脉冲DC电抗器通过滤波器将特定频率的特定频率的脉冲DC耦合到目标，滤波器滤除施加到衬底的偏置功率的影响，保护脉冲DC电源。 使用反应器沉积的膜具有可控的材料特性，例如折射率。 可以使用在根据本发明的反应器上进行的工艺来制造诸如波导放大器和多路复用器的光学部件。
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公开(公告)号：US07205662B2
公开(公告)日：2007-04-17
申请号：US10789953
申请日：2004-02-26
IPC分类号： H01L21/48
CPC分类号： C23C14/345 , C23C14/35 , H01L21/02145 , H01L21/02164 , H01L21/02178 , H01L21/02186 , H01L21/02192 , H01L21/02194 , H01L21/022 , H01L21/02266 , H01L21/02304 , H01L21/31604 , H01L21/31608 , H01L21/31612 , H01L21/31616 , H01L21/31637 , H01L21/31691 , H01L51/5253 , H01L51/5256 , H01L51/5265 , Y10S438/958
摘要： In accordance with the present invention, a dielectric barrier layer is presented. A barrier layer according to the present invention includes a densified amorphous dielectric layer deposited on a substrate by pulsed-DC, substrate biased physical vapor deposition, wherein the densified amorphous dielectric layer is a barrier layer. A method of forming a barrier layer according to the present inventions includes providing a substrate and depositing a highly densified, amorphous, dielectric material over the substrate in a pulsed-dc, biased, wide target physical vapor deposition process. Further, the process can include performing a soft-metal breath treatment on the substrate. Such barrier layers can be utilized as electrical layers, optical layers, immunological layers, or tribological layers.
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8.发明授权Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides 有权通过物理气相沉积钛和钛氧化物和亚氧化物的能量转换和储存膜和器件公开(公告)号：US08076005B2
公开(公告)日：2011-12-13
申请号：US11726972
申请日：2007-03-22
CPC分类号： H01L21/7687 , C23C14/0036 , C23C14/083 , C23C14/345 , H01L21/2855 , H01L21/31604
摘要： High density oxide films are deposited by a pulsed-DC, biased, reactive sputtering process from a titanium containing target to form high quality titanium containing oxide films. A method of forming a titanium based layer or film according to the present invention includes depositing a layer of titanium containing oxide by pulsed-DC, biased reactive sputtering process on a substrate. In some embodiments, the layer is TiO2. In some embodiments, the layer is a sub-oxide of Titanium. In some embodiments, the layer is TixOy wherein x is between about 1 and about 4 and y is between about 1 and about 7. In some embodiments, the layer can be doped with one or more rare-earth ions. Such layers are useful in energy and charge storage, and energy conversion technologies.
摘要翻译： 通过脉冲DC偏置的反应溅射工艺从含钛靶材沉积高密度氧化物膜以形成高质量的含钛氧化物膜。 根据本发明的形成钛基层或膜的方法包括通过脉冲DC偏压反应溅射工艺在衬底上沉积含钛氧化物层。 在一些实施方案中，该层是TiO 2。 在一些实施方案中，该层是钛的亚氧化物。 在一些实施方案中，该层为TixOy，其中x为约1至约4，y为约1至约7.在一些实施方案中，该层可掺杂一种或多种稀土离子。 这些层在能量和电荷存储以及能量转换技术中是有用的。
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公开(公告)号：US07381657B2
公开(公告)日：2008-06-03
申请号：US10954182
申请日：2004-10-01
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C14/345 , C23C14/0036 , C23C14/081 , C23C14/10 , C23C14/3414 , C23C14/35 , C23C14/354 , C23C14/5806 , C23C14/5873 , G02B6/132 , H01J37/32412 , H01J37/34
摘要： A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed DC power supply. Films deposited utilizing the reactor have controllable material properties such as the index of refraction. Optical components such as waveguide amplifiers and multiplexers can be fabricated using processes performed on a reactor according to the present inention.
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公开(公告)号：US07238628B2
公开(公告)日：2007-07-03
申请号：US10851542
申请日：2004-05-20
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/7687 , C23C14/0036 , C23C14/083 , C23C14/345 , H01L21/2855 , H01L21/31604
摘要： High density oxide films are deposited by a pulsed-DC, biased, reactive sputtering process from a titanium containing target to form high quality titanium containing oxide films. A method of forming a titanium based layer or film according to the present invention includes depositing a layer of titanium containing oxide by pulsed-DC, biased reactive sputtering process on a substrate. In some embodiments, the layer is TiO2. In some embodiments, the layer is a sub-oxide of Titanium. In some embodiments, the layer is TixOy wherein x is between about 1 and about 4 and y is between about 1 and about 7. In some embodiments, the layer can be doped with one or more rare-earth ions. Such layers are useful in energy and charge storage, and energy conversion technologies.
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