Magnetic recording disk, magnetoresistive read head, inductive write
head combination
    1.
    发明授权
    Magnetic recording disk, magnetoresistive read head, inductive write head combination 失效
    磁记录盘,磁阻读头,感应写头组合

    公开(公告)号:US5227212A

    公开(公告)日:1993-07-13

    申请号:US739565

    申请日:1991-08-02

    IPC分类号: G11B5/64 G11B5/66

    摘要: An improved CoPt based or CoNi based alloy magnetic recording disk for horizontal recording has a magnetic recording layer which is a laminated structure of relatively thin magnetic alloy films separated by relatively thin non-magnetic spacer films. The resulting laminated disk structure has substantially decreased intrinsic media noise at high linear recording densities. A magnetic recording disk drive uses the low noise laminated disk and and a magnetoresistive read sensor to provide a disk drive with significantly reduced noise in the data readback signal.

    摘要翻译: 用于水平记录的改进的基于CoPt或CoNi的合金磁记录盘具有磁记录层,其是由相对薄的非磁性间隔膜分离的相对薄的磁性合金膜的叠层结构。 所得的层压盘结构在高线性记录密度下具有显着降低的本征介质噪声。 磁记录盘驱动器使用低噪声层叠盘和磁阻读取传感器来提供在数据回读信号中具有显着降低的噪声的磁盘驱动器。

    Process for fabricating thin film metal alloy magnetic recording disks
to selectively variable coercivities
    3.
    发明授权
    Process for fabricating thin film metal alloy magnetic recording disks to selectively variable coercivities 失效
    用于制造薄膜金属合金磁记录盘以选择性地可变矫顽力的方法

    公开(公告)号:US5149409A

    公开(公告)日:1992-09-22

    申请号:US640182

    申请日:1991-01-11

    摘要: In the fabrication of thi film cobalt alloy magnetic recording disks by sputter-deposition, the coercivity of the disks can be selectively varied by introducing a predetermined amount of hydrocarbon gas, such as methane, into the argon-based sputtering atmosphere. The flow rate of the hydrocarbon gas into the sputtering chamber is directly related to the coercivity of the resulting disks. This permits the coercivity of the disks to be controlled without the necessity of changing the composition of the cobalt alloy sputtering targets, and without the necessity of changing the thickness of an underlying between the disk substrate and the magnetic layer. The use of hydrocarbon gas in the reactive sputtering of the cobalt alloy magnetic layer in the disks does not affect the intrinsic media noise of the disks, thus allowing for the manufacturing of disks with high signal-to-noise ratio (SNR) of the readback signal.

    摘要翻译: 在通过溅射沉积制造薄膜钴合金磁记录盘的过程中,可以通过将预定量的烃气(例如甲烷)引入到氩基溅射气氛中来选择性地改变盘的矫顽力。 进入溅射室的烃气体的流速与所得到的盘的矫顽力直接相关。 这允许在不需要改变钴合金溅射靶的组成的情况下控制盘的矫顽力,并且不需要改变盘基片和磁性层之间的厚度。 在磁盘中的钴合金磁性层的反应性溅射中使用碳氢化合物气体不会影响磁盘的内在介质噪声,从而允许制造回读的高信噪比(SNR) 信号。

    Barium ferrite thin film for longitudinal recording
    5.
    发明授权
    Barium ferrite thin film for longitudinal recording 失效
    钡铁氧体薄膜用于纵向记录

    公开(公告)号:US5492775A

    公开(公告)日:1996-02-20

    申请号:US69060

    申请日:1993-05-28

    摘要: A high-density recording media comprising longitudinally oriented polycrystalline barium ferrite exhibits large coercivity, corrosion resistance, high hardness and durability. Films are prepared by on-axis sputtering at ambient temperatures from stoichiometric targets followed by a post-deposition anneal at approximately 850.degree.C. to induce crystallization. Crystallization yields a magnetic film with large in-plane remanence and a fine scale texturing that greatly improves the tribological performance of barium ferrite disks. Exceptional durability can be achieved on disks without overcoats. Grain sizes as small as 200 .ANG. are produced by doping with small amounts of Cr.sub.2 O.sub.3 or other additives. Coercivities greater than 4000 Oe are achieved even in small grain films.

    摘要翻译: 包含纵向取向的多晶钡铁氧体的高密度记录介质具有较高的矫顽力,耐腐蚀性,高硬度和耐久性。 通过在环境温度下从化学计量的靶进行在轴溅射制备膜,然后在约850℃下进行后沉积退火以诱导结晶。 结晶产生具有大的面内剩余磁性膜和精细尺度纹理,大大提高钡铁氧体磁盘的摩擦学性能。 可以在没有大衣的磁盘上实现卓越的耐久性。 通过掺杂少量的Cr 2 O 3或其它添加剂来生产小于200安培的晶粒尺寸。 即使在小颗粒薄膜中也能获得大于4000 Oe的矫顽力。

    Getter layer lead structure for eliminating resistance increase
phenomena and embrittlement and method for making the same
    7.
    发明授权
    Getter layer lead structure for eliminating resistance increase phenomena and embrittlement and method for making the same 失效
    吸收层铅结构,用于消除电阻增加现象和脆化及其制造方法

    公开(公告)号:US5828532A

    公开(公告)日:1998-10-27

    申请号:US941774

    申请日:1997-09-30

    IPC分类号: G11B5/00 G11B5/39 G11B5/40

    CPC分类号: G11B5/3903 G11B5/00 G11B5/40

    摘要: A thin film lead structure resistant to resistance increase phenomenon resulting from contamination by mobile impurities. A thin film lead is disposed proximate to a getter layer material having a higher affinity for mobile impurities that the thin film lead. The getter layer material captures mobile impurities and prevents their migration into the thin film lead. The getter layer material may be formed over and in contact with the thin film lead, may be encapsulated within the thin film lead, or both. The getter layer material comprises a rare earth metal selected from the group consisting of yttrium, scandium, lanthanum, cerium, praseodymium, neodymium, samarium, gadolinium, terbium, dysprosium, holmium, erbium, and ytterbium. The thin film lead is preferably tantalum, but may be selected from the group consisting of niobium, vanadium, chromium, molybdenum, tungsten and iron. An alternate embodiment of the invention includes a transition metal comprising titanium, zirconium, or hafnium as the getter layer. The capture of mobile impurities by the getter layer prevents resistance increase phenomenon and embrittlement to the thin film lead. The thin film lead may be used as a thin film lead to an electrical circuit, the sensor structure in a magnetic head.

    摘要翻译: 一种薄膜引线结构,抵抗由移动杂质污染导致的电阻增加现象。 薄膜引线靠近吸附剂层材料设置,该吸气剂层材料对薄膜引线的移动杂质具有更高的亲和力。 吸气层材料捕获移动杂质并防止其迁移到薄膜引线中。 吸气剂层材料可以形成在薄膜引线之上并与薄膜引线接触,可以封装在薄膜引线内,或两者都被封装。 吸气剂层材料包括选自钇,钪,镧,铈,镨,钕,钐,钆,铽,镝,钬,铒和镱的稀土金属。 薄膜引线优选为钽,但可以选自铌,钒,铬,钼,钨和铁。 本发明的替代实施方案包括包含钛,锆或铪作为吸气剂层的过渡金属。 通过吸气层捕获移动杂质防止了电阻增加现象和薄膜引线的脆化。 薄膜引线可用作薄膜引线到电路,传感器结构在磁头中。

    Magnetoresistive sensor having antiferromagnetic layer for exchange bias
    10.
    发明授权
    Magnetoresistive sensor having antiferromagnetic layer for exchange bias 失效
    具有用于交换偏置的反铁磁层的磁阻传感器

    公开(公告)号:US5315468A

    公开(公告)日:1994-05-24

    申请号:US920943

    申请日:1992-07-28

    IPC分类号: G11B5/39 G11B5/127 G11B5/33

    CPC分类号: G11B5/3903 G11B5/3932

    摘要: A magnetoresistive (MR) sensor comprising a sputtered layer of ferromagnetic material and a sputtered layer of antiferromagnetic nickel-manganese (Ni-Mn) to provide an exchange coupled longitudinal bias field in the MR element is described. The antiferromagnetic layer overlays the MR layer and may be patterned to provide the longitudinal bias field only in the end regions of the MR layer. Alternatively, the antiferromagnetic layer can underlay the MR layer with a Zr underlayer to enhance the exchange-coupled field. As initially deposited, the Ni-Mn layer is face-centered-cubic and exhibits little or no exchange-coupled field. After one annealing cycle at a relatively low temperature, the Ni-Mn layer is face-centered-tetragonal and exhibits increased crystallographic ordering and provides sufficient exchange coupling for the MR element to operate. Addition of chromium to the Ni-Mn alloy provides increased corrosion resistance.

    摘要翻译: 描述了一种磁阻(MR)传感器,其包括铁磁材料的溅射层和反铁磁镍锰(Ni-Mn)的溅射层,以在MR元件中提供交换耦合的纵向偏置场。 反铁磁层覆盖MR层,并且可以被图案化以仅在MR层的端部区域中提供纵向偏置场。 或者,反铁磁层可以用Zr底层来衬底MR层以增强交换耦合场。 最初沉积时,Ni-Mn层是面心立方体,表现出很少或没有交换耦合场。 在相对较低温度下的一个退火循环之后,Ni-Mn层是面对中心的四边形,并且显示出增加的晶体学顺序,并提供用于MR元件操作的足够的交换耦合。 向Ni-Mn合金中添加铬提高了耐腐蚀性。