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    TRANSISTOR HAVING HIGH MOBILITY CHANNEL AND METHODS
    8.
    发明申请
    TRANSISTOR HAVING HIGH MOBILITY CHANNEL AND METHODS 有权
    具有高移动通道和方法的晶体管

    公开(公告)号：US20070087540A1

    公开(公告)日：2007-04-19

    申请号：US11557509

    申请日：2006-11-08

    申请人： Omer Dokumaci ,  Woo-Hyeong Lee

    发明人： Omer Dokumaci ,  Woo-Hyeong Lee

    IPC分类号： H01L21/3205 ,  H01L21/28 ,  H01L21/4763

    CPC分类号： H01L29/66606 ,  H01L21/26506 ,  H01L29/1054 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/66583 ,  H01L29/7833

    摘要： Methods and resulting structure of forming a transistor having a high mobility channel are disclosed. In one embodiment, the method includes providing a gate electrode including a gate material area and a gate dielectric, the gate electrode being positioned over a channel in a silicon substrate. A dielectric layer is formed about the gate electrode, and the gate material area and the gate dielectric are removed from the gate electrode to form an opening into a portion of the silicon substrate that exposes source/drain extensions. A high mobility semiconductor material, i.e., one having a carrier mobility greater than doped silicon, is then formed in the opening such that it laterally contacts the source/drain extensions. The gate dielectric and the gate material area may then be re-formed. This invention eliminates the high temperature steps after the formation of high mobility channel material used in related art methods.

    摘要翻译： 公开了形成具有高迁移率通道的晶体管的方法和结果。 在一个实施例中，该方法包括提供包括栅极材料区域和栅极电介质的栅电极，栅电极位于硅衬底中的沟道上方。 在栅电极周围形成电介质层，并且从栅极电极去除栅极材料区域和栅极电介质，以形成露出源极/漏极延伸部分的硅衬底的一部分的开口。 然后在开口中形成高迁移率半导体材料，即具有大于掺杂硅的载流子迁移率的高迁移率半导体材料，使得其侧向接触源极/漏极延伸部。 然后可以重新形成栅极电介质和栅极材料区域。 本发明消除了形成用于相关技术方法的高迁移率通道材料之后的高温步骤。

    TRANSISTOR HAVING HIGH MOBILITY CHANNEL AND METHODS
    10.
    发明申请
    TRANSISTOR HAVING HIGH MOBILITY CHANNEL AND METHODS 审中-公开
    具有高移动通道和方法的晶体管

    公开(公告)号：US20060166417A1

    公开(公告)日：2006-07-27

    申请号：US10905948

    申请日：2005-01-27

    申请人： Omer Dokumaci ,  Woo-Hyeong Lee

    发明人： Omer Dokumaci ,  Woo-Hyeong Lee

    IPC分类号： H01L21/84 ,  H01L21/00

    CPC分类号： H01L21/26513 ,  H01L21/26506 ,  H01L29/1054 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/66583 ,  H01L29/66606 ,  H01L29/7833

    摘要： Methods and resulting structure of forming a transistor having a high mobility channel are disclosed. In one embodiment, the method includes providing a gate electrode including a gate material area and a gate dielectric, the gate electrode being positioned over a channel in a silicon substrate. A dielectric layer is formed about the gate electrode, and the gate material area and the gate dielectric are removed from the gate electrode to form an opening into a portion of the silicon substrate that exposes source/drain extensions. A high mobility semiconductor material, i.e., one having a carrier mobility greater than doped silicon, is then formed in the opening such that it laterally contacts the source/drain extensions. The gate dielectric and the gate material area may then be re-formed. This invention eliminates the high temperature steps after the formation of high mobility channel material used in related art methods.

    摘要翻译： 公开了形成具有高迁移率通道的晶体管的方法和结果。 在一个实施例中，该方法包括提供包括栅极材料区域和栅极电介质的栅电极，栅电极位于硅衬底中的沟道上方。 在栅电极周围形成电介质层，并且从栅极电极去除栅极材料区域和栅极电介质，以形成露出源极/漏极延伸部分的硅衬底的一部分的开口。 然后在开口中形成高迁移率半导体材料，即具有大于掺杂硅的载流子迁移率的高迁移率半导体材料，使得其侧向接触源极/漏极延伸部。 然后可以重新形成栅极电介质和栅极材料区域。 本发明消除了形成用于相关技术方法的高迁移率通道材料之后的高温步骤。