-
公开(公告)号：US20080248213A1
公开(公告)日：2008-10-09
申请号：US12061010
申请日：2008-04-02
申请人： Robert D. Allen , Mark W. Hart , Frances Houle , Hiroshi Ito
发明人： Robert D. Allen , Mark W. Hart , Frances Houle , Hiroshi Ito
IPC分类号： C08J7/18
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , Y10S977/887
摘要： An imprint process comprising coating a selected surface of a micropatterned template with a release composition having a basic reactive moiety; wherein the template is transparent to UV radiation; imprinting the template onto a photocationically curable composition; curing the UV curable composition to form an imprinted composition, wherein the release composition having a basic reactive moiety is effective to locally inhibit curing of the composition at an interface between the template and the imprinted composition; and releasing the template from the imprinted composition.
摘要翻译： 一种压印方法，包括用具有碱性反应性部分的释放组合物涂布微图案化模板的选定表面; 其中所述模板对UV辐射是透明的; 将模板印刷在光固化组合物上; 固化可UV固化组合物以形成印迹组合物，其中具有碱性反应性部分的释放组合物有效地局部抑制组合物在模板和印迹组合物之间的界面处的固化; 并从印迹组合物释放模板。
-
公开(公告)号：US20080241418A1
公开(公告)日：2008-10-02
申请号：US11694117
申请日：2007-03-30
申请人： Robert D. Allen , Mark W. Hart , Frances Houle , Hiroshi Ito
发明人： Robert D. Allen , Mark W. Hart , Frances Houle , Hiroshi Ito
IPC分类号： B05D3/06
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , Y10S977/887
摘要： An imprint process comprising coating a selected surface of a micropatterned template with a release composition having a basic reactive moiety; wherein the template is transparent to UV radiation; imprinting the template onto a photocationically curable composition; curing the UV curable composition to form an imprinted composition, wherein the release composition having a basic reactive moiety is effective to locally inhibit curing of the composition at an interface between the template and the imprinted composition; and releasing the template from the imprinted composition.
摘要翻译： 一种压印方法，包括用具有碱性反应性部分的释放组合物涂布微图案化模板的选定表面; 其中所述模板对UV辐射是透明的; 将模板印刷在光固化组合物上; 固化可UV固化组合物以形成印迹组合物，其中具有碱性反应性部分的释放组合物有效地局部抑制组合物在模板和印迹组合物之间的界面处的固化; 并从印迹组合物释放模板。
-
公开(公告)号：US07749422B2
公开(公告)日：2010-07-06
申请号：US11694117
申请日：2007-03-30
申请人： Robert D. Allen , Mark W. Hart , Frances Houle , Hiroshi Ito
发明人： Robert D. Allen , Mark W. Hart , Frances Houle , Hiroshi Ito
IPC分类号： B29C35/08
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , Y10S977/887
摘要： An imprint process comprising coating a selected surface of a micropatterned template with a release composition having a basic reactive moiety; wherein the template is transparent to UV radiation; imprinting the template onto a photocationically curable composition; curing the UV curable composition to form an imprinted composition, wherein the release composition having a basic reactive moiety is effective to locally inhibit curing of the composition at an interface between the template and the imprinted composition; and releasing the template from the imprinted composition.
摘要翻译： 一种压印方法，包括用具有碱性反应性部分的释放组合物涂布微图案化模板的选定表面; 其中所述模板对UV辐射是透明的; 将模板印刷在光固化组合物上; 固化可UV固化组合物以形成印迹组合物，其中具有碱性反应性部分的释放组合物有效地局部抑制组合物在模板和印迹组合物之间的界面处的固化; 并从印迹组合物释放模板。
-
公开(公告)号：US20110079579A1
公开(公告)日：2011-04-07
申请号：US12574171
申请日：2009-10-06
CPC分类号： G03F7/0752 , C09D7/63 , G03F7/094
摘要： Molecular glass based planarizing compositions for lithographic processing are disclosed. The processes generally include casting the planarizing composition onto a surface comprised of lithographic features, the planarizing composition comprising at least one molecular glass and at least one solvent; and heating the planarizing composition to a temperature greater than a glass transition temperature of the at least one molecular glass. Exemplary molecular glasses include polyhedral oligomeric silsesquioxane derivatives, calixarenes, cyclodextrin derivatives, and other non-polymeric large molecules.
摘要翻译： 公开了用于光刻处理的基于分子玻璃的平面化组合物。 所述方法通常包括将平坦化组合物浇铸到由光刻特征组成的表面上，平坦化组合物包含至少一种分子玻璃和至少一种溶剂; 并且将所述平坦化组合物加热至大于所述至少一种分子玻璃的玻璃化转变温度的温度。 示例性分子玻璃包括多面体低聚倍半硅氧烷衍生物，杯芳烃，环糊精衍生物和其它非聚合大分子。
-
公开(公告)号：US08377631B2
公开(公告)日：2013-02-19
申请号：US12574171
申请日：2009-10-06
CPC分类号： G03F7/0752 , C09D7/63 , G03F7/094
摘要： Molecular glass based planarizing compositions for lithographic processing are disclosed. The processes generally include casting the planarizing composition onto a surface comprised of lithographic features, the planarizing composition comprising at least one molecular glass and at least one solvent; and heating the planarizing composition to a temperature greater than a glass transition temperature of the at least one molecular glass. Exemplary molecular glasses include polyhedral oligomeric silsesquioxane derivatives, calixarenes, cyclodextrin derivatives, and other non-polymeric large molecules.
摘要翻译： 公开了用于光刻处理的基于分子玻璃的平面化组合物。 所述方法通常包括将平坦化组合物浇铸到由光刻特征组成的表面上，平坦化组合物包含至少一种分子玻璃和至少一种溶剂; 并且将所述平坦化组合物加热至大于所述至少一种分子玻璃的玻璃化转变温度的温度。 示例性分子玻璃包括多面体低聚倍半硅氧烷衍生物，杯芳烃，环糊精衍生物和其它非聚合大分子。
-
公开(公告)号：US07828986B2
公开(公告)日：2010-11-09
申请号：US11926722
申请日：2007-10-29
申请人： Joy Cheng , Mark W. Hart , Hiroshi Ito , Ho-Cheol Kim , Robert Miller
发明人： Joy Cheng , Mark W. Hart , Hiroshi Ito , Ho-Cheol Kim , Robert Miller
IPC分类号： B44C1/22 , H01L21/302
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , H01L21/0271 , H01L21/0332
摘要： A method. A combination is provided of a block copolymer and additional material. The copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. The first polymer includes polystyrene and the second polymer includes poly(ethylene oxide). A first layer including polydimethylglutarimide is adhered onto a surface of a substrate including a dielectric coated silicon wafer. A film is formed of the combination directly onto a surface of the first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film and the first layer are simultaneously etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. Portions of the film are removed. Features remain on the surface of the first layer.
摘要翻译： 一个方法。 提供了一种嵌段共聚物和另外的材料的组合。 共聚物包括共价键合到第二聚合物的第二嵌段的第一聚合物的第一嵌段。 附加材料与第一聚合物混溶。 第一聚合物包括聚苯乙烯，第二聚合物包括聚（环氧乙烷）。 包括聚二甲基戊二酰亚胺的第一层粘附到包括电介质涂覆的硅晶片的基材的表面上。 该组合物直接由第一层的表面形成。 附加材料的纳米结构在第一聚合物嵌段内自组装。 同时蚀刻膜和第一层。 纳米结构的蚀刻速率低于嵌段共聚物的蚀刻速率，并且低于第一层的蚀刻速率。 部分电影被删除。 特征保留在第一层的表面上。
-
公开(公告)号：US08529779B2
公开(公告)日：2013-09-10
申请号：US12057565
申请日：2008-03-28
申请人： Joy Cheng , Mark W. Hart , Hiroshi Ito , Ho-Cheol Kim , Robert Miller
发明人： Joy Cheng , Mark W. Hart , Hiroshi Ito , Ho-Cheol Kim , Robert Miller
IPC分类号： B31D3/00 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/302
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , H01L21/0271 , H01L21/0332
摘要： A method for producing surface features and an etch masking method. A combination is provided of a block copolymer and additional material. The block copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. A film is formed of the combination directly onto a surface of a first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film of the combination and the first layer are etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. The film is removed and features remain on the surface of the first layer. Also included is an etch masking method where the nanostructures mask portions of the first layer from said etchant.
摘要翻译： 一种用于产生表面特征的方法和蚀刻掩模方法。 提供了一种嵌段共聚物和另外的材料的组合。 嵌段共聚物包括共价键合到第二聚合物的第二嵌段的第一聚合物的第一嵌段。 附加材料与第一聚合物混溶。 膜由直接形成在第一层的表面上。 附加材料的纳米结构在第一聚合物嵌段内自组装。 蚀刻组合和第一层的膜。 纳米结构的蚀刻速率低于嵌段共聚物的蚀刻速率，并且低于第一层的蚀刻速率。 去除膜并且特征保留在第一层的表面上。 还包括蚀刻掩模法，其中纳米结构掩盖了来自所述蚀刻剂的第一层的部分。
-
公开(公告)号：US20090107953A1
公开(公告)日：2009-04-30
申请号：US12057565
申请日：2008-03-28
申请人： Joy Cheng , Mark W. Hart , Hiroshi Ito , Ho-Cheol Kim , Robert Miller
发明人： Joy Cheng , Mark W. Hart , Hiroshi Ito , Ho-Cheol Kim , Robert Miller
IPC分类号： C23F1/00
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , H01L21/0271 , H01L21/0332
摘要： A method for producing surface features and an etch masking method. A combination is provided of a block copolymer and additional material. The block copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. A film is formed of the combination directly onto a surface of a first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film of the combination and the first layer are etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. The film is removed and features remain on the surface of the first layer. Also included is an etch masking method where the nanostructures mask portions of the first layer from said etchant.
摘要翻译： 一种用于产生表面特征的方法和蚀刻掩模方法。 提供了一种嵌段共聚物和另外的材料的组合。 嵌段共聚物包括共价键合到第二聚合物的第二嵌段的第一聚合物的第一嵌段。 附加材料与第一聚合物混溶。 膜由直接形成在第一层的表面上。 附加材料的纳米结构在第一聚合物嵌段内自组装。 蚀刻组合和第一层的膜。 纳米结构的蚀刻速率低于嵌段共聚物的蚀刻速率，并且低于第一层的蚀刻速率。 去除膜并且特征保留在第一层的表面上。 还包括蚀刻掩模法，其中纳米结构掩盖了来自所述蚀刻剂的第一层的部分。
-
公开(公告)号：US20090107950A1
公开(公告)日：2009-04-30
申请号：US11926722
申请日：2007-10-29
申请人： Joy Cheng , Mark W. Hart , Hiroshi Ito , Ho-Cheol Kim , Robert Miller
发明人： Joy Cheng , Mark W. Hart , Hiroshi Ito , Ho-Cheol Kim , Robert Miller
IPC分类号： H01B13/00
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , H01L21/0271 , H01L21/0332
摘要： A method for producing surface features and an etch masking method. A combination is provided of a block copolymer and additional material. The block copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. A film is formed of the combination directly onto a surface of a first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film of the combination and the first layer are etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. The film is removed and features remain on the surface of the first layer. Also included is an etch masking method where the nanostructures mask portions of the first layer from said etchant.
摘要翻译： 一种用于产生表面特征的方法和蚀刻掩模方法。 提供了一种嵌段共聚物和另外的材料的组合。 嵌段共聚物包括共价键合到第二聚合物的第二嵌段的第一聚合物的第一嵌段。 附加材料与第一聚合物混溶。 膜由直接形成在第一层的表面上。 附加材料的纳米结构在第一聚合物嵌段内自组装。 蚀刻组合和第一层的膜。 纳米结构的蚀刻速率低于嵌段共聚物的蚀刻速率，并且低于第一层的蚀刻速率。 去除膜并且特征保留在第一层的表面上。 还包括蚀刻掩模法，其中纳米结构掩盖了来自所述蚀刻剂的第一层的部分。
-
10.发明授权Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation 有权非平面化，自对准，非易失性相变存储器阵列和形成方法公开(公告)号：US07682866B2
公开(公告)日：2010-03-23
申请号：US11335329
申请日：2006-01-19
申请人： Mark W. Hart , Christie R. K. Marrian , Gary M. McClelland , Charles T. Rettner , Hemantha K. Wickramasinghe
发明人： Mark W. Hart , Christie R. K. Marrian , Gary M. McClelland , Charles T. Rettner , Hemantha K. Wickramasinghe
CPC分类号： H01L27/2409 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1675
摘要： A method for fabrication and a structure of a self-aligned (crosspoint) memory device comprises lines (wires) in a first direction and in a second direction. The wires in the first direction are formed using a hard mask material that is resistant to the pre-selected etch processes used for creation of the lines in both the first and the second direction. Consequently, the hard mask material for the lines in the first direction form part of the memory stack.
摘要翻译： 用于制造的方法和自对准（交叉点）存储器件的结构包括在第一方向和第二方向上的线（线）。 使用硬掩模材料形成第一方向上的导线，该硬掩模材料抵抗用于在第一和第二方向上产生线的预选蚀刻工艺。 因此，用于沿第一方向的线的硬掩模材料形成存储器堆叠的一部分。
-
-
-
-
-
-
-
-
-
搜索结果
14 条记录 (耗时 0.024 秒)
