摘要:
A method, apparatus and program product are provided for simulating a circuit. A plurality of elements of the circuit is represented by device models including pass/fail criteria. A circuit simulation program is executed on a hardware implemented processor where the circuit simulation program is configured to obtain simulation results from the device models in response to applied parameters. The circuit simulation program identifies a failure of one or more of the plurality of elements of the circuit based on the pass/fail criteria of the device models. The circuit simulation program is further configured to output the failures during simulation of the one or more of the plurality of elements that are identified in response to the applied parameters.
摘要:
A method, apparatus and program product are provided for simulating a circuit. A plurality of elements of the circuit is represented by device models including pass/fail criteria. A circuit simulation program is executed on a hardware implemented processor where the circuit simulation program is configured to obtain simulation results from the device models in response to applied parameters. The circuit simulation program identifies a failure of one or more of the plurality of elements of the circuit based on the pass/fail criteria of the device models. The circuit simulation program is further configured to output the failures during simulation of the one or more of the plurality of elements that are identified in response to the applied parameters.
摘要:
In a memory (100), a local data line pair (116, 118) is precharged to a first logic state and a global data line pair (101, 104) is precharged to a second logic state. A selected memory cell is coupled to the local data line pair (116, 118) to develop a differential local data line voltage. The differential local data line voltage is subsequently amplified to form an amplified differential local data line voltage. A selected one of the global data line pair (101, 104) is driven to the first logic state in response to the amplified differential local data line voltage to form a differential global data line voltage.
摘要:
A method and structure for preventing operation of a circuit in a high current operating region by disabling a start-up circuit until a power supply headroom is detected at a predetermined voltage level.
摘要:
In accordance with the present disclosure, an electronic circuit of an integrated circuit is configured to receive an input signal that has a falling transition and a rising transition and provide a selectable delay of the input signal transitions on its output. The output of the disclosed circuit can provide a falling transition delayed in response to a falling edge control signal control, and a rising transition delayed in response to a rising edge control signal. The disclosed circuit can have a rising transition control circuit (RTCC), a falling transition control circuit (FTCC) and an output circuit.
摘要:
A linear regulator and a method of regulating a supply voltage are provided. Embodiments include a linear regulator with a first feedback loop and a second feedback loop. The first feedback loop is characterized by a first bandwidth and a first gain. The first feedback loop includes a first amplifier characterized by an output impedance which is significantly reduced in order to maximize the bandwidth of the first feedback loop when driving the capacitance of a control input of a series pass element. The second feedback loop is characterized by a second bandwidth and a second gain. The second feedback loop includes a second amplifier that controls the current in the first amplifier in the first feedback loop.
摘要:
Methods and systems for configuring characteristics associated with at least one portion of a memory array comprising addressable units are provided. In one aspect, a method for controlling a power supply voltage for a memory array comprises detecting whether an error occurred in performing a read operation on an addressable unit of the memory array using a first power supply voltage coupled to the memory array. The method further comprises incrementing an error counter for tracking an error count associated with the memory array and switching the memory array to a second power supply voltage if the error count is equal to or exceeds an error threshold for the memory array. The method further comprises, based on at least one condition, switching the memory array to the first power supply voltage and resetting the error counter to an initial value.
摘要:
A structure and related design structure for providing a common mode feedback to a differential amplifier are disclosed. A common mode feedback amplifier is connected to a differential amplifier to provide common mode feedback voltage thereto. An input of the common mode feedback amplifier is shorted to an output terminal of the differential amplifier during a sampling phase, and is coupled to the differential output voltage through two matched capacitors during a holding phase.
摘要:
A structure and related design structure for providing a common mode feedback to a differential amplifier are disclosed. A common mode feedback amplifier is connected to a differential amplifier to provide common mode feedback voltage thereto. An input of the common mode feedback amplifier is shorted to an output terminal of the differential amplifier during a sampling phase, and is coupled to the differential output voltage through two matched capacitors during a holding phase.
摘要:
A memory system including a random access memory (RAM) array and a corresponding redundant RAM array which stores information redundant to the RAM array, where a designed cell circuit topology of cells within the redundant RAM array differs from a designed cell circuit topology of cells within the RAM array. The redundant RAM array is selectively accessed when accessing the RAM array to store data to the redundant RAM array for failed cells of the RAM array.