-
公开(公告)号：US5008718A
公开(公告)日：1991-04-16
申请号：US452800
申请日：1989-12-18
CPC分类号： H01L33/30 , H01L33/0062
摘要： A light-emitting diode has a semiconductor substrate underlying active p-n junction layers of AlGaInP for emitting light. A transparent window layer of semiconductor different from AlGaInP overlies the active layers and has a lower electrical resistivity than the active layers and a bandgap greater than the bandgap of the active layers, for minimizing current crowding from a metal electrical contact over the transparent window layer. The active layers may be epitaxially grown on a temporary GaAs substrate. A layer of lattice mismatched GaP is then grown on the active layers with the GaP having a bandgap greater than the bandgap of the active layers so that it is transparent to light emitted by the LED. The GaAs temporary substrate is then selectively etched away so that the GaP acts as a transparent substrate. A transparent window layer may be epitaxially grown over the active layers on the face previously adjacent to the GaAs substrate.
-
公开(公告)号：US5233204A
公开(公告)日：1993-08-03
申请号：US819542
申请日：1992-01-10
CPC分类号： H01L33/02 , H01L33/0062
摘要： A light emitting diode (LED) including a light generation region situated on a light-absorbing substrate also includes a thick transparent layer which ensures that an increased amount of light is emitted from the sides of the LED and only a minimum amount of light is absorbed by the substrate. The thickness of the transparent layer is determined as a function of its width and the critical angle at which light is internally reflected within the transparent layer. The thick transparent layer is located either above, below or both above and below the light generation region. The thick transparent layer may be made of materials and with fabrication processes different from the light generation region.
-
公开(公告)号：US5204284A
公开(公告)日：1993-04-20
申请号：US744569
申请日：1991-08-13
CPC分类号： H01L33/04 , B82Y20/00 , H01L33/02 , H01L33/30 , H01S5/3201 , H01S5/3213 , H01S5/3215 , H01S5/32325 , H01S5/34326 , Y10S438/936
摘要： A high band-gap opto-electronic device is formed by epitaxially growing the device section in a lattice-matched (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P-GaAs system. The band-gap of the epitaxial layer increases with x. Instead of growing the device section directly on the GaAs substrate, a layer of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P, graded in x and in temperature while maintaining substantially y=0.5, is grown as a transitional layer. The high band-gap device structures include homojunctions, heterojunctions and particularly a separate confinement quantum well heterostructures. Various embodiments of the invention include devices on absorbing substrates and on transparent substrates, and devices incorporating strained-layer superlattices.
摘要翻译： 通过在晶格匹配（Al x Ga 1-x）y In 1-y -P-GaAs系统中外延生长器件部分来形成高带隙光电器件。 外延层的带隙随x增加。 不是直接在GaAs衬底上生长器件部分，而是在保持基本上为y = 0.5的同时以x和温度分级的（Al x Ga 1-x）y In 1-y P层被生长为过渡层。 高带隙器件结构包括同功能，异质结，特别是单独的约束量子阱异质结构。 本发明的各种实施例包括吸收衬底和透明衬底上的器件以及包含应变层超晶格的器件。
-
公开(公告)号：US5060028A
公开(公告)日：1991-10-22
申请号：US300003
申请日：1989-01-19
IPC分类号： H01L21/205 , H01L31/10 , H01L33/02 , H01L33/30 , H01S5/00 , H01S5/02 , H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343
CPC分类号： H01L33/02 , B82Y20/00 , H01L33/30 , H01S5/3201 , H01S5/3216 , H01S5/32325 , H01S5/34326
摘要： A high band-gap opto-electronic device is formed by epitaxially growing the device section in a lattice-matched (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P-GaAs system. The band-gap of the epitaxial layer increases with x. Instead of growing the device section directly on the GaAs substrate, a layer of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-7 P, graded in x and in temperature while maintaining substantially y=0.5, is grown as a transitional layer. The high band-gap device structures include homojunctions, heterojunctions and particularly a separate confinement quantum well heterostructures. Various embodiments of the invention include devices on absorbing substrates and on transparent substrates, and devices incorporating strained-layer superlattices.
-
公开(公告)号：US06307218B1
公开(公告)日：2001-10-23
申请号：US09196928
申请日：1998-11-20
申请人： Daniel A. Steigerwald , Serge L Rudaz , Kyle J. Thomas , Steven D. Lester , Paul S. Martin , William R. Imler , Robert M. Fletcher , Fred A. Kish, Jr. , Steven A. Maranowski
发明人： Daniel A. Steigerwald , Serge L Rudaz , Kyle J. Thomas , Steven D. Lester , Paul S. Martin , William R. Imler , Robert M. Fletcher , Fred A. Kish, Jr. , Steven A. Maranowski
IPC分类号： H01L3300
摘要： A light emitting device includes a heterojunction having a p-type layer and an n-type layer. The n-electrode is electrically connected to the n-type layer while the p-electrode is electrically connected to the p-type layer. The p and n-electrodes are positioned to form a region having uniform light intensity.
摘要翻译： 发光器件包括具有p型层和n型层的异质结。 n电极与n型层电连接，而p电极与p型层电连接。 p和n电极被定位成形成具有均匀光强度的区域。
-
公开(公告)号：US06933535B2
公开(公告)日：2005-08-23
申请号：US10699433
申请日：2003-10-31
申请人： Daniel A. Steigerwald , William D. Collins III , Robert M. Fletcher , Michael J. Ludowise , Jason L. Posselt
发明人： Daniel A. Steigerwald , William D. Collins III , Robert M. Fletcher , Michael J. Ludowise , Jason L. Posselt
CPC分类号： H01L33/505 , H01L2224/16
摘要： A structure includes semiconductor light emitting device and a wavelength converting layer. The wavelength converting layer converts a portion of the light emitted from the semiconductor light emitting device. The dominant wavelength of the combined light from the semiconductor light emitting device and the wavelength converting layer is essentially the same as the wavelength of light emitted from the device. The wavelength converting layer may emit light having a spectral luminous efficacy greater than the spectral luminous efficacy of the light emitted from the device. Thus, the structure has a higher luminous efficiency than a device without a wavelength converting layer.
-
-
-
-
-
搜索结果
6 条记录 (耗时 0.021 秒)