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公开(公告)号：USRE38674E1
公开(公告)日：2004-12-21
申请号：US08528188
申请日：1995-09-14
IPC分类号： H01L2131
CPC分类号： H01L21/28185 , H01L21/02164 , H01L21/022 , H01L21/02211 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/28238 , H01L21/31662 , H01L29/513 , H01L29/518 , Y10S148/118
摘要： A novel process for forming a robust, sub-100 Å oxide is disclosed. Native oxide growth is tightly controlled by flowing pure nitrogen during wafer push and nitrogen with a small amount of oxygen during temperature ramp and stabilization. First, a dry oxidation is performed in oxygen and 13% trichloroethane. Next, a wet oxidation in pyrogenic steam is performed to produce a total oxide thickness of approximately 80 Å. The oxide layer formed is ideally suited for use as a high integrity gate oxide below 100 Å. The invention is particularly useful in devices with advanced, recessed field isolation where sharp silicon edges are difficult to oxidize. For an oxide layer of more than 100 Å, a composite oxide stack is used which comprises 40-90 Å of pad oxide formed using the above novel process, and 60-200 Å of deposited oxide.
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公开(公告)号：US5244843A
公开(公告)日：1993-09-14
申请号：US809971
申请日：1991-12-17
IPC分类号： H01L21/28 , H01L21/31 , H01L21/316 , H01L21/469 , H01L29/51
CPC分类号： H01L21/28185 , H01L21/02164 , H01L21/022 , H01L21/02211 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/28202 , H01L21/28211 , H01L21/28238 , H01L21/31662 , H01L29/513 , H01L29/518 , H01L21/28194 , Y10S148/118
摘要： A novel process for forming a robust, sub-100 .ANG. oxide is disclosed. Native oxide growth is tightly controlled by flowing pure nitrogen during wafer push and nitrogen with a small amount of oxygen during temperature ramp and stabilization. First, a dry oxidation is performed in oxygen and 13% trichloroethane. Next, a wet oxidation in pyrogenic steam is performed to produce a total oxide thickness of approximately 80 .ANG.. The oxide layer formed is ideally suited for use as a high integrity gate oxide below 100 .ANG.. The invention is particularly useful in devices with advanced, recessed field isolation where sharp silicon edges are difficult to oxidize. For an oxide layer of more than 100 .ANG., a composite oxide stack is used which comprises 40-90 .ANG. of pad oxide formed using the above novel process, and 60-200 .ANG. of deposited oxide.
摘要翻译： 公开了一种用于形成稳健的，低于100的ANGSTROM氧化物的新方法。 天然氧化物生长通过在晶片推动期间流动纯氮并在温度升高和稳定期间用少量氧气氮气来严格控制。 首先，在氧气和13％三氯乙烷中进行干燥氧化。 接下来，进行热原蒸汽中的湿氧化，以产生约80安培的总氧化物厚度。 形成的氧化物层理想地适合用作低于100安培的高完整性栅极氧化物。 本发明在具有尖锐的硅边缘难以氧化的先进的凹陷磁场隔离的装置中特别有用。 对于超过100个ANGSTROM的氧化物层，使用复合氧化物堆叠，其包括使用上述新方法形成的衬垫氧化物的40-90，以及沉积氧化物的60-200。
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3.发明授权
公开(公告)号：US5891809A
公开(公告)日：1999-04-06
申请号：US536653
申请日：1995-09-29
IPC分类号： H01L21/28 , H01L21/314 , H01L21/316 , H01L21/336 , H01L21/762 , H01L29/51 , H01L21/31
CPC分类号： H01L21/28185 , H01L21/0214 , H01L21/02238 , H01L21/02255 , H01L21/02332 , H01L21/02337 , H01L21/28202 , H01L21/28211 , H01L21/3144 , H01L21/31662 , H01L21/76235 , H01L29/518 , H01L29/6656 , H01L29/6659
摘要： A method of forming a thin, robust nitrided oxide layer. The process results in a manufacturable, uniform, low-defect density, reliable nitrided oxide that may be used as a gate dielectric, as a portion of a spacer, or as a portion of a trench isolation. First, a substrate is oxidized in a chlorinated dry oxidation followed by a low temperature pyrogenic steam oxidation. Next, a low temperature ammonia anneal is performed, followed by a high temperature anneal in an inert ambient.
摘要翻译： 形成薄而坚固的氮化氧化物层的方法。 该方法产生可制造，均匀，低缺陷密度，可靠的氮化氧化物，其可以用作栅极电介质，作为间隔物的一部分，或者作为沟槽隔离的一部分。 首先，将基板在氯化干燥氧化中氧化，然后进行低温热解蒸汽氧化。 接下来，进行低温氨退火，随后在惰性环境中进行高温退火。
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