Methods and apparatus for depositing tantalum metal films to surfaces and substrates
    8.
    发明授权
    Methods and apparatus for depositing tantalum metal films to surfaces and substrates 失效
    将钽金属薄膜沉积到表面和基材上的方法和设备

    公开(公告)号:US07482289B2

    公开(公告)日:2009-01-27

    申请号:US11511548

    申请日:2006-08-25

    IPC分类号: H01L21/00

    摘要: Methods and an apparatus are disclosed for depositing tantalum metal films in next-generation solvent fluids on substrates and/or deposition surfaces useful, e.g., as metal seed layers. Deposition involves low valence oxidation state metal precursors soluble in liquid and/or compressible solvent fluids at liquid, near-critical, or supercritical conditions for the mixed precursor solutions. Metal film deposition is effected via thermal and/or photolytic activation of the metal precursors. The invention finds application in fabrication and processing of semiconductor, metal, polymer, ceramic, and like substrates or composites.

    摘要翻译: 公开了用于在下一代溶剂流体中沉积钽金属膜的方法和装置,该衬底和/或沉积表面可用作例如金属种子层。 沉积涉及溶解在用于混合前体溶液的液体,接近临界或超临界条件下的液体和/或可压缩溶剂流体中的低价态氧化态金属前体。 通过金属前体的热和/或光解活化来实现金属膜沉积。 本发明应用于半导体,金属,聚合物,陶瓷等基板或复合材料的制造和加工中。

    Methods and apparatus for depositing tantalum metal films to surfaces and substrates
    9.
    发明申请
    Methods and apparatus for depositing tantalum metal films to surfaces and substrates 失效
    将钽金属薄膜沉积到表面和基材上的方法和设备

    公开(公告)号:US20080050916A1

    公开(公告)日:2008-02-28

    申请号:US11511548

    申请日:2006-08-25

    IPC分类号: H01L21/44

    摘要: Methods and an apparatus are disclosed for depositing tantalum metal films in next-generation solvent fluids on substrates and/or deposition surfaces useful, e.g., as metal seed layers. Deposition involves low valence oxidation state metal precursors soluble in liquid and/or compressible solvent fluids at liquid, near-critical, or supercritical conditions for the mixed precursor solutions. Metal film deposition is effected via thermal and/or photolytic activation of the metal precursors. The invention finds application in fabrication and processing of semiconductor, metal, polymer, ceramic, and like substrates or composites.

    摘要翻译: 公开了用于在下一代溶剂流体中沉积钽金属膜的方法和装置,该衬底和/或沉积表面可用作例如金属种子层。 沉积涉及溶解在用于混合前体溶液的液体,接近临界或超临界条件下的液体和/或可压缩溶剂流体中的低价态氧化态金属前体。 通过金属前体的热和/或光解活化来实现金属膜沉积。 本发明应用于半导体,金属,聚合物,陶瓷等基板或复合材料的制造和加工中。