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    Additive Manufacturing With Cell Processing Recipes
    1.
    发明申请
    Additive Manufacturing With Cell Processing Recipes 审中-公开

    公开(公告)号：US20180369915A1

    公开(公告)日：2018-12-27

    申请号：US15992094

    申请日：2018-05-29

    申请人： David Masayuki Ishikawa ,  Paul J. Steffas ,  Ajey M. Joshi

    发明人： David Masayuki Ishikawa ,  Paul J. Steffas ,  Ajey M. Joshi

    IPC分类号： B22F3/105 ,  B33Y10/00 ,  B33Y50/02 ,  B22F3/00

    摘要： A method of additive manufacturing includes storing a plurality of predetermined cell processing recipes, dispensing a layer of a plurality of successive layers of feed material on a platform, receiving data describing an area of the layer of the feed material to fuse, determining a combination of a plurality of non-overlapping cells that substantially cover the area, and sequentially processing the plurality of cells. Each cell processing recipe includes scan path data indicating a path for an energy beam to follow, and different cell processing recipes having different paths for the energy beam. Each cell of the plurality of cells gets an associated cell processing recipe selected from the plurality of predetermined cell processing recipes. Each cell is processed by causing an energy beam to follow the first path for the cell processing recipe associated with the cell.

    Method of controlling sidewall profile by using intermittent, periodic introduction of cleaning species into the main plasma etching species
    4.
    发明申请
    Method of controlling sidewall profile by using intermittent, periodic introduction of cleaning species into the main plasma etching species 审中-公开
    通过间歇地定期将清洗物质引入主等离子体蚀刻物质来控制侧壁轮廓的方法

    公开(公告)号：US20080286979A1

    公开(公告)日：2008-11-20

    申请号：US12220503

    申请日：2008-07-24

    申请人： Taeho Shin ,  Jingbao Liu ,  Ajey M. Joshi ,  Jong Mun Kim ,  Wei-Te Wu

    发明人： Taeho Shin ,  Jingbao Liu ,  Ajey M. Joshi ,  Jong Mun Kim ,  Wei-Te Wu

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/76802 ,  H01L21/31122 ,  H01L21/31144

    摘要： A method of removing a silicon-containing hard polymeric material from an opening leading to a recessed feature during the plasma etching of said recessed feature into a carbon-containing layer in a semiconductor substrate. The method comprises the intermittent use of a cleaning step within a continuous etching process, where at least one fluorine-containing cleaning agent species is added to already present etchant species of said continuous etching process for a limited time period, wherein the length of time of each cleaning step ranges from about 5% to about 100% of the time length of an etch step which either precedes or follows said cleaning step.

    摘要翻译： 在将所述凹入特征等离子体蚀刻到半导体衬底中的含碳层中时，从导通凹陷特征的开口去除含硅的硬质聚合物材料的方法。 该方法包括在连续蚀刻过程中间歇地使用清洁步骤，其中在有限时间段内将至少一种含氟清洁剂种类添加到已存在的所述连续蚀刻工艺的蚀刻剂物质中，其中时间长度 每个清洁步骤的范围是在所述清洁步骤之前或之后的蚀刻步骤的时间长度的约5％至约100％。

    Halogen-free amorphous carbon mask etch having high selectivity to photoresist
    7.
    发明授权
    Halogen-free amorphous carbon mask etch having high selectivity to photoresist 失效
    对光致抗蚀剂具有高选择性的无卤无定形碳掩模蚀刻

    公开(公告)号：US07807064B2

    公开(公告)日：2010-10-05

    申请号：US11689389

    申请日：2007-03-21

    申请人： Jong Mun Kim ,  Judy Wang ,  Ajey M. Joshi ,  Jingbao Liu ,  Bryan Y. Pu

    发明人： Jong Mun Kim ,  Judy Wang ,  Ajey M. Joshi ,  Jingbao Liu ,  Bryan Y. Pu

    IPC分类号： B44C1/22

    CPC分类号： H01L21/31122 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/31138 ,  H01L21/31144

    摘要： In one embodiment of the present invention, a halogen-free plasma etch processes is used to define a feature in a multi-layered masking stack including an amorphous carbon layer. In a particular embodiment, oxygen (O2), nitrogen (N2), and carbon monoxide (CO) are utilized to etch the amorphous carbon layer to form a mask capable of producing sub-100 nm features in a substrate film having a reduced line edge roughness value. In another embodiment, the present invention employs an O2 plasma pretreatment preceding the halogen-free amorphous carbon etch to first form an oxidized silicon region in a patterned photoresist layer to increase the selectivity of the amorphous carbon etch relative to a patterned photoresist layer containing unoxidized silicon.

    摘要翻译： 在本发明的一个实施例中，使用无卤等离子体蚀刻工艺来定义包括无定形碳层的多层掩模叠层中的特征。 在一个具体实施方案中，使用氧（O 2），氮（N 2）和一氧化碳（CO）来蚀刻无定形碳层以形成能够在具有减小的线边缘的基底膜中产生亚100nm特征的掩模 粗糙度值。 在另一个实施方案中，本发明采用在无卤无定形碳蚀刻之前的O 2等离子体预处理，首先在图案化光致抗蚀剂层中形成氧化硅区，以增加无定形碳蚀刻相对于含有未氧化硅的图案化光致抗蚀剂层的选择性 。

    HALOGEN-FREE AMORPHOUS CARBON MASK ETCH HAVING HIGH SELECTIVITY TO PHOTORESIST
    8.
    发明申请
    HALOGEN-FREE AMORPHOUS CARBON MASK ETCH HAVING HIGH SELECTIVITY TO PHOTORESIST 失效
    无色无机非晶碳片具有高选择性的光刻胶

    公开(公告)号：US20080230511A1

    公开(公告)日：2008-09-25

    申请号：US11689389

    申请日：2007-03-21

    申请人： Jong Mun Kim ,  Judy Wang ,  Ajey M. Joshi ,  Jingbao Liu ,  Bryan Y. Pu

    发明人： Jong Mun Kim ,  Judy Wang ,  Ajey M. Joshi ,  Jingbao Liu ,  Bryan Y. Pu

    IPC分类号： B44C1/22

    CPC分类号： H01L21/31122 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/31138 ,  H01L21/31144

    摘要： In one embodiment of the present invention, a halogen-free plasma etch processes is used to define a feature in a multi-layered masking stack including an amorphous carbon layer. In a particular embodiment, oxygen (O2), nitrogen (N2), and carbon monoxide (CO) are utilized to etch the amorphous carbon layer to form a mask capable of producing sub-100 nm features in a substrate film having a reduced line edge roughness value. In another embodiment, the present invention employs an O2 plasma pretreatment preceding the halogen-free amorphous carbon etch to first form an oxidized silicon region in a patterned photoresist layer to increase the selectivity of the amorphous carbon etch relative to a patterned photoresist layer containing unoxidized silicon.

    摘要翻译： 在本发明的一个实施例中，使用无卤等离子体蚀刻工艺来定义包括无定形碳层的多层掩模叠层中的特征。 在一个具体实施方案中，使用氧（O 2 H 2），氮（N 2 H 2）和一氧化碳（CO）来蚀刻无定形碳层以形成掩模 在具有降低的线边缘粗糙度值的基底膜中产生亚100nm特征。 在另一个实施方案中，本发明采用在无卤无定形碳蚀刻之前的O 2等离子体预处理，首先在图案化的光致抗蚀剂层中形成氧化的硅区，以增加无定形碳蚀刻相对的选择性 涉及含有未氧化硅的图案化光致抗蚀剂层。