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公开(公告)号:US20230420930A1
公开(公告)日:2023-12-28
申请号:US18462748
申请日:2023-09-07
Applicant: ROHM CO., LTD.
Inventor: Toshiyuki ISHIKAWA
Abstract: An isolated gate driver has: a register that stores the adjustment data read from a non-volatile memory; a gate driving circuit that drives the gate of a switching element with a characteristic set based on a value stored in the register; a fault detector that performs fault detection for other than the non-volatile memory; an error detection-correction circuit that performs error detection and error correction on the adjustment data written to the non-volatile memory; a first external terminal for output of the result of fault detection; a second external terminal for output of the result of error detection; and a fault controller that, if a one-bit error is detected in the adjustment data, brings the second external terminal into an error-indicating output state and continues with normal operation of the gate driving circuit and, if a two-or-more-bit error is detected in the adjustment data, forcibly stops the gate driving circuit.
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公开(公告)号:US20210233700A1
公开(公告)日:2021-07-29
申请号:US17230356
申请日:2021-04-14
Applicant: ROHM CO., LTD.
Inventor: Kosei OSADA , Isamu NISHIMURA , Tetsuya KAGAWA , Daiki YANAGISHIMA , Toshiyuki ISHIKAWA , Michihiko MIFUJI , Satoshi KAGEYAMA , Nobuyuki KASAHARA
IPC: H01F27/28 , H01L23/64 , H01L23/522 , H01L23/58 , H01L23/495
Abstract: The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.
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公开(公告)号:US20230421050A1
公开(公告)日:2023-12-28
申请号:US18454277
申请日:2023-08-23
Applicant: ROHM CO., LTD.
Inventor: Toshiyuki ISHIKAWA
IPC: H02M1/088 , H02M7/5387
CPC classification number: H02M1/088 , H02M7/53871 , H02M1/325
Abstract: An isolated gate driver has: a switch connection terminal configured to have a switching element externally connected to it; a non-volatile memory having adjustment data written to it; a register configured to store the adjustment data read from the non-volatile memory; a gate driving circuit configured to drive the gate of the switching element with a characteristic set based on a value stored in the register; and a control logic circuit configured to keep the gate driving circuit in a disabled state until completion of reading the adjustment data from the non-volatile memory and storing it in the register.
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公开(公告)号:US20180026611A1
公开(公告)日:2018-01-25
申请号:US15652514
申请日:2017-07-18
Applicant: Rohm Co., Ltd.
Inventor: Toshiyuki ISHIKAWA , Daiki YANAGISHIMA , Yoshizo OSUMI
CPC classification number: H03K3/037 , B60L50/51 , H03K17/61 , H03K17/687 , H03K17/691 , H03K19/20 , H04L25/0266 , H04L25/493
Abstract: A signal transmission circuit which transmits N (N is a natural number of 2 or more) input signals includes a transmission signal generation portion, 2N transmission portions and an output portion. The transmission signal generation portion generates 2N transmission signals according to the N input signals. The 2N transmission portions respectively transmit the 2N transmission signals output from the transmission signal generation portion while performing electrical insulation. The output portion generates and outputs, based on the 2N transmission signals transmitted by the 2N transmission portions, N output signals that respectively indicate the N input signals. The transmission signal generation portion generates a pulse according to the N input signals and incorporates the pulse in only one of the 2N transmission signals at the same time.
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公开(公告)号:US20140361810A1
公开(公告)日:2014-12-11
申请号:US14297878
申请日:2014-06-06
Applicant: Rohm Co., Ltd.
Inventor: Akio SASABE , Hirotaka TAKIHARA , Makoto IKENAGA , Toshiyuki ISHIKAWA
IPC: H04L25/02
CPC classification number: H04L25/0274 , H03K19/16
Abstract: A signal-transferring device having a first circuit and a second circuit that operate on different ground references, and a third circuit for transferring signals while providing insulation between the first circuit and the second circuit. The second circuit switches a logic level of an output signal in accordance with the logic level of an input signal notified by the first circuit, and notifies the first circuit about the logic level of the output signal. The first circuit notifies the second circuit about the logic level of the input signal not only when the logic level of the input signal has been switched, but also when the logic level of the output signal notified by the second circuit does not match the logic level of the input signal.
Abstract translation: 一种具有在不同接地基准上工作的第一电路和第二电路的信号传送装置,以及用于在第一电路和第二电路之间提供绝缘的同时传送信号的第三电路。 第二电路根据由第一电路通知的输入信号的逻辑电平切换输出信号的逻辑电平,并将第一电路通知输出信号的逻辑电平。 第一电路不仅在输入信号的逻辑电平已被切换时通知第二电路关于输入信号的逻辑电平,而且当第二电路通知的输出信号的逻辑电平与逻辑电平不匹配时, 的输入信号。
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公开(公告)号:US20230298805A1
公开(公告)日:2023-09-21
申请号:US18300193
申请日:2023-04-13
Applicant: ROHM CO., LTD.
Inventor: Kosei OSADA , Isamu NISHIMURA , Tetsuya KAGAWA , Daiki YANAGISHIMA , Toshiyuki ISHIKAWA , Michihiko MIFUJI , Satoshi KAGEYAMA , Nobuyuki KASAHARA
IPC: H01F27/28 , H01L23/64 , H01L23/522 , H01L23/58 , H01L23/495
CPC classification number: H01F27/288 , H01F27/2804 , H01L23/49575 , H01L23/5225 , H01L23/5227 , H01L23/585 , H01L23/645 , H01L23/3107
Abstract: The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.
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公开(公告)号:US20170287624A1
公开(公告)日:2017-10-05
申请号:US15624205
申请日:2017-06-15
Applicant: ROHM CO., LTD.
Inventor: Kosei OSADA , Isamu NISHIMURA , Tetsuya KAGAWA , Daiki YANAGISHIMA , Toshiyuki ISHIKAWA , Michihiko MIFUJI , Satoshi KAGEYAMA , Nobuyuki KASAHARA
IPC: H01F27/28 , H01L23/522 , H01L23/58 , H01L23/495 , H01L23/64
CPC classification number: H01F27/288 , H01F27/2804 , H01F2027/2819 , H01L23/3107 , H01L23/49575 , H01L23/5225 , H01L23/5227 , H01L23/585 , H01L23/645 , H01L2224/04042 , H01L2224/05554 , H01L2224/05567 , H01L2224/06135 , H01L2224/48137 , H01L2224/48195 , H01L2224/48247 , H01L2224/49113 , H01L2224/49175 , H01L2924/10253 , H01L2924/10272 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19104
Abstract: The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.
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公开(公告)号:US20150137314A1
公开(公告)日:2015-05-21
申请号:US14537234
申请日:2014-11-10
Applicant: ROHM CO., LTD.
Inventor: Kosei OSADA , Isamu NISHIMURA , Tetsuya KAGAWA , Daiki YANAGISHIMA , Toshiyuki ISHIKAWA , Michihiko MIFUJI , Satoshi KAGEYAMA , Nobuyuki KASAHARA
IPC: H01L49/02 , H01L23/552 , H01F27/28 , H01L23/31
CPC classification number: H01F27/288 , H01F27/2804 , H01F2027/2819 , H01L23/3107 , H01L23/49575 , H01L23/5225 , H01L23/5227 , H01L23/585 , H01L23/645 , H01L2224/04042 , H01L2224/05554 , H01L2224/05567 , H01L2224/06135 , H01L2224/48137 , H01L2224/48195 , H01L2224/48247 , H01L2224/49113 , H01L2924/10253 , H01L2924/10272 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19104
Abstract: The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.
Abstract translation: 本发明的半导体器件包括绝缘层,高压线圈和低压线圈,其在垂直方向上以间隔设置在绝缘层中;低电位部分设置在设置在低电压区域周围的低电压区域 高压线圈的平面图的高电压区域,并且与低于高压线圈的电位相连接;以及电场屏蔽部,其设置在高电压线圈与低电压区域之间,并且具有电浮极金属部件 。
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