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公开(公告)号：US08678612B2
公开(公告)日：2014-03-25
申请号：US12423749
申请日：2009-04-14
IPC分类号： F21V21/00
CPC分类号： F21S2/005 , F21V3/00 , F21V21/005 , F21V23/0442 , F21V23/0457 , F21V23/06 , F21V29/58 , F21V29/60 , F21Y2115/10
摘要： A light source including a plate and an emitter array mounted on the plate extending from a first edge to a second edge. The plate can include a first edge; a second edge, the first edge being opposite the second edge; a first mount on the first edge; and a second mount on the second edge. Such light sources can be combined together.
摘要翻译： 一种光源，包括安装在从第一边缘延伸到第二边缘的板上的板和发射极阵列。 板可以包括第一边缘; 第二边缘，所述第一边缘与所述第二边缘相对; 第一个边缘上的第一个安装座; 以及在第二边缘上的第二安装件。 这样的光源可以组合在一起。
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公开(公告)号：US20100259943A1
公开(公告)日：2010-10-14
申请号：US12423749
申请日：2009-04-14
IPC分类号： F21V19/00
CPC分类号： F21S2/005 , F21V3/00 , F21V21/005 , F21V23/0442 , F21V23/0457 , F21V23/06 , F21V29/58 , F21V29/60 , F21Y2115/10
摘要： A light source including a plate and an emitter array mounted on the plate extending from a first edge to a second edge. The plate can include a first edge; a second edge, the first edge being opposite the second edge; a first mount on the first edge; and a second mount on the second edge. Such light sources can be combined together.
摘要翻译： 一种光源，包括安装在从第一边缘延伸到第二边缘的板上的板和发射极阵列。 板可以包括第一边缘; 第二边缘，所述第一边缘与所述第二边缘相对; 第一个边缘上的第一个安装座; 以及在第二边缘上的第二安装件。 这样的光源可以组合在一起。
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公开(公告)号：US20100259187A1
公开(公告)日：2010-10-14
申请号：US12423573
申请日：2009-04-14
CPC分类号： H05B37/0218 , F21K9/00 , F21Y2105/10 , F21Y2115/10 , Y02B20/46
摘要： A semiconductor lighting device has an array of semiconductor light sources arranged in an x-y grid, a power input in electrical connection with the array and arranged to provide power to the light sources, a microcontroller in electrical connection with the array arranged to alter operation of the array as necessary, and a connector in electrical connection with the microcontroller, arranged to provide an interface to the microcontroller. A semiconductor lighting device has an array of semiconductor light sources arranged in an x-y grid, a power input in electrical connection with the array and arranged to provide power to the light sources, a microcontroller in electrical connection with the array and the power supply arranged to alter operation of the array as necessary, a first interface to allow a first level of access to the microcontroller by an end user, a second interface to allow a second level of access to the microcontroller for maintenance operations, and a third interface to allow a third level of access to the microcontroller during production.
摘要翻译： 半导体照明装置具有布置在xy格栅中的半导体光源的阵列，与阵列电连接并被布置成向光源提供电力的功率输入，与阵列电连接的微控制器，其布置成改变 阵列，以及与微控制器电连接的连接器，被布置成提供到微控制器的接口。 半导体照明装置具有布置在xy栅格中的半导体光源的阵列，与阵列电连接并被布置成向光源提供电力的功率输入，与阵列电连接的微控制器和布置成 根据需要改变阵列的操作，第一接口，以允许最终用户对微控制器进行第一级访问;允许对微控制器进行第二级访问以进行维护操作的第二接口;以及第三接口， 在生产过程中第三级访问微控制器。
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公开(公告)号：US08653737B2
公开(公告)日：2014-02-18
申请号：US12423573
申请日：2009-04-14
IPC分类号： H05B37/02
CPC分类号： H05B37/0218 , F21K9/00 , F21Y2105/10 , F21Y2115/10 , Y02B20/46
摘要： A semiconductor lighting device has an array of semiconductor light sources arranged in an x-y grid, a power input in electrical connection with the array and arranged to provide power to the light sources, a microcontroller in electrical connection with the array arranged to alter operation of the array as necessary, and a connector in electrical connection with the microcontroller, arranged to provide an interface to the microcontroller. The semiconductor lighting device has a first interface to allow a first level of access to the microcontroller by an end user, a second interface to allow a second level of access to the microcontroller for maintenance operations, and a third interface to allow a third level of access to the microcontroller during production.
摘要翻译： 半导体照明装置具有布置在xy格栅中的半导体光源的阵列，与阵列电连接并被布置成向光源提供电力的功率输入，与阵列电连接的微控制器，其布置成改变 阵列，以及与微控制器电连接的连接器，被布置成提供到微控制器的接口。 半导体照明装置具有第一接口，以允许终端用户对微控制器进行第一级访问，第二接口允许对微控制器的第二级访问以进行维护操作;以及第三接口，允许第三级别的 在生产期间访问微控制器。
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5.发明授权Method employing UV laser pulses of varied energy density to form depthwise self-limiting blind vias in multilayered targets 失效采用不同能量密度的紫外激光脉冲在多层靶中形成深度自限盲孔的方法
公开(公告)号：US5841099A
公开(公告)日：1998-11-24
申请号：US651036
申请日：1996-05-17
IPC分类号： B23K26/00 , B23K26/38 , B23K26/40 , B23K101/36 , B23K101/42 , C23C14/04 , C23C14/28 , H01L23/12 , H05K3/00 , H05K3/02 , H05K3/40 , H05K3/42 , H05K3/46
CPC分类号： C23C14/046 , B23K26/384 , B23K26/386 , B23K26/388 , B23K26/40 , B23K26/402 , C23C14/048 , C23C14/28 , H05K3/0035 , H05K3/0038 , H05K3/4076 , B23K2203/08 , B23K2203/10 , B23K2203/12 , B23K2203/16 , B23K2203/172 , B23K2203/26 , B23K2203/40 , B23K2203/42 , B23K2203/50 , H05K2203/107 , H05K2203/108 , H05K3/027 , H05K3/427
摘要： The output of a continuously pumped, Q-switched, Nd:YAG laser (10) is frequency converted to provide ultraviolet light (62) for forming vias (72, 74) in targets (40) having metallic layers (64,68) and a dielectric layer (66). The invention employs a first laser output of high power density to ablate the metallic layer and a second laser output of a lower power density to ablate the dielectric layer. The parameters of the output pulses (62) are selected to facilitate substantially clean, sequential drilling or via formation. These parameters typically include at least two of the following criteria: power density first above and then below the ablation threshold of the conductor, wavelength less than 400 nm, a temporal pulse width shorter than about 100 nanoseconds, and a repetition rate of greater than about one kilohertz. The ability to generate ultraviolet light output pulses at two power densities facilitates the formation of depthwise self-limiting blind vias in multilayer targets, such as a target composed of a layer dielectric material covered on either surface by a layer of metal.
摘要翻译： 连续泵浦的Q开关Nd：YAG激光器（10）的输出被频率转换以提供用于在具有金属层（64,68）的靶（40）中形成通孔（72,74）的紫外光（62）和 介电层（66）。 本发明采用高功率密度的第一激光输出来烧蚀金属层和较低功率密度的第二激光输出以消融电介质层。 选择输出脉冲（62）的参数以便于基本上清洁，顺序钻孔或通孔形成。 这些参数通常包括以下标准中的至少两个：功率密度先于导体的消融阈值，然后低于导体的消融阈值，波长小于400nm，时间脉冲宽度短于约100纳秒，重复率大于约 一千赫兹 以两个功率密度产生紫外光输出脉冲的能力有助于在多层靶中形成深度自限制的盲孔，例如由由金属层在任一表面上覆盖的层介电材料构成的靶。
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