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    TRANSISTOR LAYOUT CONFIGURATION FOR TIGHT-PITCHED MEMORY ARRAY LINES
    1.
    发明申请
    TRANSISTOR LAYOUT CONFIGURATION FOR TIGHT-PITCHED MEMORY ARRAY LINES 有权
    用于紧凑的内存阵列的晶体管布局配置

    公开(公告)号：US20060221758A1

    公开(公告)日：2006-10-05

    申请号：US11420787

    申请日：2006-05-29

    申请人： Christopher Petti ,  Roy Scheuerlein ,  Tanmay Kumar ,  Abhijit Bandyopadhyay

    发明人： Christopher Petti ,  Roy Scheuerlein ,  Tanmay Kumar ,  Abhijit Bandyopadhyay

    IPC分类号： G11C8/00

    CPC分类号： G11C8/14 ,  G11C5/02 ,  G11C5/063 ,  G11C8/08 ,  H01L27/0207 ,  H01L27/0688 ,  H01L27/10894 ,  H01L27/10897

    摘要： A multi-headed word line driver circuit incorporates bent-gate transistors to reduce the pitch otherwise achievable for interfacing to tightly-pitched array lines. In certain exemplary embodiments, a three-dimensional memory array includes multiple memory blocks and array lines traversing horizontally across at least one memory block. Vertical active area stripes are disposed beneath a first memory block, and a respective plurality of bent-gate electrodes intersects each respective active area stripe to define individual source/drain regions. Every other source/drain region is coupled to a bias node for the active area stripe, and remaining source/drain regions are respectively coupled to a respective array line associated with the first memory block, thereby forming a respective first driver transistor for the respective array line. In certain embodiments, a respective plurality of complementary array line driver circuits is disposed on each side of a connection area between adjacent memory blocks, and each such driver circuit is responsive to a single driver input node.

    摘要翻译： 多头字线驱动电路包括弯栅晶体管，以减少为了与紧密排列的阵列线连接而实现的间距。 在某些示例性实施例中，三维存储器阵列包括穿过至少一个存储器块水平横越的多个存储器块和阵列线。 垂直有源区条纹设置在第一存储块下方，并且相应的多个弯曲栅电极与每个相应的有源区条纹相交以限定各个源/漏区。 每个其它源极/漏极区域耦合到用于有源区域条纹的偏置节点，并且剩余的源极/漏极区域分别耦合到与第一存储器模块相关联的相应阵列线，从而形成用于相应阵列的相应的第一驱动器晶体管 线。 在某些实施例中，相应的多个互补阵列线驱动器电路设置在相邻存储块之间的连接区域的每一侧上，并且每个这样的驱动器电路响应于单个驱动器输入节点。

    Multi-use memory cell and memory array
    2.
    发明申请
    Multi-use memory cell and memory array 审中-公开
    多用存储单元和存储器阵列

    公开(公告)号：US20070069276A1

    公开(公告)日：2007-03-29

    申请号：US11496985

    申请日：2006-07-31

    申请人： Roy Scheuerlein ,  Tanmay Kumar

    发明人： Roy Scheuerlein ,  Tanmay Kumar

    IPC分类号： H01L29/76

    CPC分类号： G11C11/5692 ,  G11C11/005 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/003 ,  G11C17/14 ,  G11C2211/5641 ,  G11C2211/5646 ,  G11C2213/32 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/76 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/148

    摘要： A multi-use memory cell and memory array are disclosed. In one preferred embodiment, a memory cell is operable as a one-time programmable memory cell or a rewritable memory cell. The memory cell comprises a memory element comprising a semiconductor material configurable to one of at least three resistivity states, wherein a first resistivity state is used to represent a data state of the memory cell when the memory cell operates as a one-time programmable memory cell but not when the memory cell operates as a rewritable memory cell. A memory array with such memory cells is also disclosed. In another preferred embodiment, a memory cell is provided comprising a switchable resistance material, wherein the memory cell is operable in a first mode in which the memory cell is programmed with a forward bias and a second mode in which the memory cell is programmed with a reverse bias.

    摘要翻译： 公开了一种多用途存储器单元和存储器阵列。 在一个优选实施例中，存储器单元可操作为一次性可编程存储器单元或可重写存储单元。 存储单元包括存储元件，其包括可配置为至少三种电阻率状态之一的半导体材料，其中当存储器单元作为一次可编程存储单元操作时，第一电阻率状态用于表示存储单元的数据状态 但是当存储器单元作为可重写存储单元时不起作用。 还公开了具有这种存储单元的存储器阵列。 在另一个优选实施例中，提供了一种包括可切换电阻材料的存储单元，其中存储单元可在第一模式中操作，其中存储单元用正向偏置和第二模式编程，其中存储单元用 反向偏差。

    Method for using a multi-use memory cell and memory array
    3.
    发明申请
    Method for using a multi-use memory cell and memory array 有权
    使用多用途存储单元和存储器阵列的方法

    公开(公告)号：US20070070690A1

    公开(公告)日：2007-03-29

    申请号：US11496984

    申请日：2006-07-31

    申请人： Roy Scheuerlein ,  Tanmay Kumar

    发明人： Roy Scheuerlein ,  Tanmay Kumar

    IPC分类号： G11C11/14

    CPC分类号： G11C11/5692 ,  G11C11/005 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/003 ,  G11C17/14 ,  G11C2211/5641 ,  G11C2211/5646 ,  G11C2213/32 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/76 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/148

    摘要： A method for using a multi-use memory cell and memory array are disclosed. In one preferred embodiment, a memory cell is operable as a one-time programmable memory cell or a rewritable memory cell. The memory cell comprises a memory element comprising a semiconductor material configurable to one of at least three resistivity states, wherein a first resistivity state is used to represent a data state of the memory cell when the memory cell operates as a one-time programmable memory cell but not when the memory cell operates as a rewritable memory cell. A memory array with such memory cells is also disclosed. In another preferred embodiment, a memory cell is provided comprising a switchable resistance material, wherein the memory cell is operable in a first mode in which the memory cell is programmed with a forward bias and a second mode in which the memory cell is programmed with a reverse bias.

    摘要翻译： 公开了一种使用多用存储单元和存储器阵列的方法。 在一个优选实施例中，存储器单元可操作为一次性可编程存储器单元或可重写存储单元。 存储单元包括存储元件，其包括可配置为至少三种电阻率状态之一的半导体材料，其中当存储器单元作为一次可编程存储单元操作时，第一电阻率状态用于表示存储单元的数据状态 但是当存储器单元作为可重写存储单元时不起作用。 还公开了具有这种存储单元的存储器阵列。 在另一个优选实施例中，提供了一种包括可切换电阻材料的存储单元，其中存储单元可在第一模式中操作，其中存储单元用正向偏置和第二模式编程，其中存储单元用 反向偏差。

    Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance
    5.
    发明申请
    Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance 有权
    一种用于使用具有可调整电阻的可切换半导体存储元件的存储单元的方法

    公开(公告)号：US20070072360A1

    公开(公告)日：2007-03-29

    申请号：US11496986

    申请日：2006-07-31

    申请人： Tanmay Kumar ,  S.B. Herner ,  Roy Scheuerlein ,  Christopher Petti

    发明人： Tanmay Kumar ,  S.B. Herner ,  Roy Scheuerlein ,  Christopher Petti

    IPC分类号： H01L21/8234

    CPC分类号： G11C11/5692 ,  G11C13/0069 ,  G11C17/14 ,  G11C17/165 ,  G11C2013/0073 ,  H01L27/101

    摘要： A nonvolatile memory cell comprising a diode formed of semiconductor material can store memory states by changing the resistance of the semiconductor material by application of a set pulse (decreasing resistance) or a reset pulse (increasing resistance.) In preferred embodiments, set pulses are applied with the diode under forward bias, while reset pulses are applied with the diode in reverse bias. By switching resistivity of the semiconductor material of the diode, a memory cell can be either one-time programmable or rewriteable, and can achieve two, three, four, or more distinct data states.

    摘要翻译： 包括由半导体材料形成的二极管的非易失性存储单元可以通过施加设置脉冲（降低电阻）或复位脉冲（增加电阻）来改变半导体材料的电阻来存储存储器状态。在优选实施例中，施加设定脉冲 二极管在正向偏置下，而复位脉冲以二极管反向施加。 通过切换二极管的半导体材料的电阻率，存储器单元可以是一次性可编程的或可重写的，并且可以实现两个，三个，四个或更多个不同的数据状态。

    Method of programming a monolithic three-dimensional memory
    6.
    发明申请
    Method of programming a monolithic three-dimensional memory 审中-公开
    编写单片三维存储器的方法

    公开(公告)号：US20060067127A1

    公开(公告)日：2006-03-30

    申请号：US10955049

    申请日：2004-09-30

    申请人： Luca Fasoli ,  Roy Scheuerlein ,  Alper Ilkbahar ,  En-Hsing Chen ,  Tanmay Kumar

    发明人： Luca Fasoli ,  Roy Scheuerlein ,  Alper Ilkbahar ,  En-Hsing Chen ,  Tanmay Kumar

    IPC分类号： G11C11/34 ,  G11C16/04

    CPC分类号： G11C16/12 ,  G11C16/16

    摘要： A method of programming a monolithic three-dimensional (3-D) memory having a plurality of levels of memory cells above a silicon substrate is disclosed. The method includes initializing a program voltage and program time interval; selecting a memory cell to be programmed within the three-dimensional memory having the plurality of levels of memory cells; applying a pulse having the program voltage and the program time interval to the selected memory cell; performing a read after write operation with respect to the selected memory cell to determine a measured threshold voltage value; and comparing the measured threshold voltage value to a minimum program voltage. In response to the comparison between the measured threshold voltage value and the minimum program voltage, the method further includes selectively applying at least one subsequent program pulse to the selected memory cell.

    摘要翻译： 公开了一种在硅衬底上编程具有多层存储单元的单片三维（3-D）存储器的方法。 该方法包括初始化程序电压和程序时间间隔; 选择要在具有多个级别的存储器单元的三维存储器内编程的存储器单元; 将具有编程电压和程序时间间隔的脉冲施加到所选存储单元; 在对所选择的存储单元进行写操作之后执行读取以确定测量的阈值电压值; 以及将所测量的阈值电压值与最小编程电压进行比较。 响应于测量的阈值电压值和最小编程电压之间的比较，该方法还包括选择性地将至少一个后续编程脉冲施加到所选存储单元。

    Low temperature P+ polycrystalline silicon material for non-volatile memory device
    8.
    发明授权
    Low temperature P+ polycrystalline silicon material for non-volatile memory device 有权
    低温P +多晶硅材料用于非易失性存储器件

    公开(公告)号：US08658476B1

    公开(公告)日：2014-02-25

    申请号：US13452657

    申请日：2012-04-20

    申请人： Xin Sun ,  Sung Hyun Jo ,  Tanmay Kumar

    发明人： Xin Sun ,  Sung Hyun Jo ,  Tanmay Kumar

    IPC分类号： H01L27/112 ,  H01L21/82 ,  H01L21/20 ,  H01L29/04 ,  H01L29/06 ,  H01L29/10

    CPC分类号： H01L45/145 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L27/101 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/148 ,  H01L45/1616 ,  H01L45/1675

    摘要： A method of forming a non-volatile memory device. The method includes providing a substrate having a surface region and forming a first dielectric material overlying the surface region of the substrate. A first electrode structure is formed overlying the first dielectric material and a p+ polycrystalline silicon germanium material is formed overlying the first electrode structure. A p+ polycrystalline silicon material is formed overlying the first electrode structure using the polycrystalline silicon germanium material as a seed layer at a deposition temperature ranging from about 430 Degree Celsius to about 475 Degree Celsius without further anneal. The method forms a resistive switching material overlying the polycrystalline silicon material, and a second electrode structure including an active metal material overlying the resistive switching material.

    摘要翻译： 一种形成非易失性存储器件的方法。 该方法包括提供具有表面区域并形成覆盖在基板的表面区域上的第一介电材料的基板。 形成第一电极结构，覆盖第一电介质材料，并且形成覆盖第一电极结构的p +多晶硅锗材料。 在大约430摄氏度至大约475摄氏度的沉积温度下，使用多晶硅锗材料作为种子层，形成覆盖第一电极结构的p +多晶硅材料，而无需进一步退火。 该方法形成覆盖多晶硅材料的电阻开关材料，以及包括覆盖电阻开关材料的活性金属材料的第二电极结构。