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    Thin film transistor substrate, method of manufacturing the same and display device having the same
    2.
    发明授权
    Thin film transistor substrate, method of manufacturing the same and display device having the same 有权
    薄膜晶体管基板及其制造方法以及具有该薄膜晶体管基板的显示装置

    公开(公告)号：US09575386B2

    公开(公告)日：2017-02-21

    申请号：US13961714

    申请日：2013-08-07

    申请人： Samsung Display Co., Ltd.

    发明人： Jin-Young Choi ,  Jae-Sung Kim ,  Cha-Dong Kim

    IPC分类号： G02F1/1368 ,  G02F1/1345 ,  H01L27/12 ,  G02F1/1333

    CPC分类号： G02F1/1368 ,  G02F1/13458 ,  G02F2001/133357 ,  G02F2001/133388 ,  H01L27/124

    摘要： A thin film transistor substrate is provided. The thin film transistor substrate includes a display area including a plurality of pixels, wherein the pixels are connected to gate lines and data lines, a gate driver connected to the gate lines, a plurality of data pads connected to the data lines, a plurality of dummy pattern parts formed of a same layer as the gate lines, and a non-display area in which the gate driver, data pads, and dummy pattern parts are disposed, and the dummy pattern parts are disposed in an area within the non-display area where the gate driver is not disposed, and one of the dummy pattern parts is disposed overlapping with the data pads.

    摘要翻译： 提供薄膜晶体管基板。 薄膜晶体管基板包括包括多个像素的显示区域，其中像素连接到栅极线和数据线，连接到栅极线的栅极驱动器，连接到数据线的多个数据焊盘，多个 由与栅极线相同的层形成的虚拟图形部分，以及设置栅极驱动器，数据焊盘和虚设图案部分的非显示区域，并且虚设图案部分设置在非显示器内的区域中 没有设置栅极驱动器的区域，并且虚设图案部分中的一个与数据焊盘重叠设置。

    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    显示装置及其制造方法

    公开(公告)号：US20140176893A1

    公开(公告)日：2014-06-26

    申请号：US13870503

    申请日：2013-04-25

    申请人： SAMSUNG DISPLAY CO., LTD.

    发明人： Koichi SUGITANI ,  Seong Gyu Kwon ,  Joo-Han Bae ,  Hoon Kang ,  Jae-Sung Kim ,  Jin-Young Choi ,  Jin Ho Ju ,  Dong Hyun Yu ,  Hyung-Il Jeon

    IPC分类号： G02F1/1343

    CPC分类号： G02F1/133377 ,  G02F1/133305 ,  G02F2001/133368

    摘要： A display device according to an exemplary embodiment of the present invention includes a substrate including a plurality of pixel regions, a thin film transistor disposed on the substrate, and a pixel electrode connected to the thin film transistor and disposed in a first pixel region. A roof layer is disposed on the pixel electrode and spaced apart from the pixel electrode with a microcavity interposed therebetween. The plurality of pixel regions is disposed in a matrix form including a plurality of pixel rows and a plurality of pixel columns, the roof layer is disposed along the plurality of pixel rows, and the roof layer includes a bridge portion connecting the roof layers disposed in different pixel rows.

    摘要翻译： 根据本发明的示例性实施例的显示装置包括：包括多个像素区域的衬底;设置在衬底上的薄膜晶体管;以及连接到薄膜晶体管并设置在第一像素区域中的像素电极。 屋顶层设置在像素电极上并与像素电极间隔开，其间插入有微腔。 所述多个像素区域以包括多个像素行和多个像素列的矩阵形式设置，所述屋顶层沿着所述多个像素列布置，所述屋顶层包括桥接部分，所述桥接部分将设置在 不同的像素行。

    Thin film transistor array panel and method for manufacturing the same
    8.
    发明授权
    Thin film transistor array panel and method for manufacturing the same 有权
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号：US08629861B2

    公开(公告)日：2014-01-14

    申请号：US13875494

    申请日：2013-05-02

    申请人： Samsung Display Co., Ltd.

    发明人： Jae-Sung Kim ,  Hoon Kang ,  Yang-Ho Jung

    IPC分类号： G09G5/00 ,  H01L33/08

    CPC分类号： G02F1/136227 ,  G02F1/00 ,  H01L27/1248 ,  H01L27/1288 ,  H01L29/41733

    摘要： A manufacturing method of a thin film transistor array panel includes forming a gate line, forming a gate insulating layer on the gate line, forming a data line including a drain electrode on the gate insulating layer, forming a passivation layer on the gate insulating layer, the data line, and the drain electrode, forming a negative photosensitive organic layer on the passivation layer, heat treating the negative photosensitive organic layer to form an insulating layer including a first portion, and a second portion that is thinner than the first portion, and forming a pixel electrode, a first contact assistant, and a second contact assistant on the insulating layer. The pixel electrode is disposed on the first portion, the first and second contact assistants are disposed on the second portion, and the thickness of the second portion is less than about 1.5 micrometers (μm).

    摘要翻译： 薄膜晶体管阵列面板的制造方法包括形成栅极线，在栅极线上形成栅极绝缘层，在栅极绝缘层上形成包括漏电极的数据线，在栅极绝缘层上形成钝化层， 数据线和漏电极，在钝化层上形成负光敏有机层，对负光敏有机层进行热处理，形成包含第一部分的绝缘层和比第一部分薄的第二部分，以及 在绝缘层上形成像素电极，第一接触辅助件和第二接触辅助件。 像素电极设置在第一部分上，第一和第二接触助剂设置在第二部分上，第二部分的厚度小于约1.5微米（母体）。