Abstract:
Disclosed is a LED which can be mounted at high density on a large area display. Having a hole for heat sink in the ceramic substrate, the LED is superior in heat sink property. In order to fabricate the light emitting device, first, a secondary ceramic sheet is stacked on the ceramic substrate, followed by forming electrodes in a predetermined pattern on the secondary ceramic sheet around the hole for heat sink. On the ceramic substrate, an upper ceramic sheet with an opening is stacked to form a stacked ceramic substrate in such a way that a part of the electrodes are exposed through the opening. After co-firing the stacked ceramic substrate, a light emitting diode chip is mounted on the secondary ceramic sheet at a position corresponding to the hole for heat sink. Then, the electrodes are electrically connected with the LED chip, and the LED chip is sealed with insulating resin. A light emitting device using the LED and a fabrication method therefor are also disclosed.
Abstract:
Disclosed is a LED which can be mounted at high density on a large area display. Having a hole for heat sink in the ceramic substrate, the LED is superior in heat sink property. In order to fabricate the light emitting device, first, a secondary ceramic sheet is stacked on the ceramic substrate, followed by forming electrodes in a predetermined pattern on the secondary ceramic sheet around the hole for heat sink. On the ceramic substrate, an upper ceramic sheet with an opening is stacked to form a stacked ceramic substrate in such a way that a part of the electrodes are exposed through the opening. After co-firing the stacked ceramic substrate, a light emitting diode chip is mounted on the secondary ceramic sheet at a position corresponding to the hole for heat sink. Then, the electrodes are electrically connected with the LED chip, and the LED chip is sealed with insulating resin. A light emitting device using the LED and a fabrication method therefor are also disclosed.
Abstract:
Disclosed is a blue light emitting diode comprising a laminate structure formed in the center of a first conductive nitride semiconductor layer, a first electrode formed on a part of a transparent metal layer included in the laminate structure and a second electrode formed on a peripheral part of the first conductive nitride semiconductor layer, which is not covered by the laminate structure. By altering the locations of the first electrode and the second electrode and forming electrode extensions thereof, it is possible to disperse effectively the current density. Accordingly, the concentration of the current density contributing to the rapid increase of the temperature can be avoided without a significant change of the laminate structure of the conventional light emitting diode. In addition it is possible to improve resistance to electrostatic discharge and to reduce the driving voltage.