公开(公告)号：US20160189760A1

公开(公告)日：2016-06-30

申请号：US15062240

申请日：2016-03-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Bum KIM ,  Hyung Gon KIM ,  Chul Ho LEE ,  Hong Seok CHANG

IPC: G11C7/22 ,  G11C7/10 ,  G11C8/10

CPC classification number: G11C7/222 ,  G11C7/10 ,  G11C8/10 ,  G11C16/08 ,  G11C16/10 ,  G11C16/32

Abstract: A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.

公开(公告)号：US20220188177A1

公开(公告)日：2022-06-16

申请号：US17486341

申请日：2021-09-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Ho LEE ,  Ki Jong NAM ,  Won-Gi HONG

IPC: G06F11/07 ,  G06F3/06 ,  G01K3/00 ,  G11C16/04 ,  G11C16/26 ,  G11C16/10

Abstract: A storage device and a storage system including the same are provided. The storage device includes a nonvolatile memory with a valid page and a free page; a temperature sensor configured to sense a temperature of the nonvolatile memory; and a storage controller configured to implement: a patrol read module configured to read valid data stored in the valid page and identify a number of errors in the read valid data according to a set time period, and a retention module configured to, based on the temperature or the number of errors, read the valid data stored in the valid page, and write the valid data to the free page while controlling a threshold voltage distribution width corresponding to a value of the valid data written to the free page.

公开(公告)号：US20240020189A1

公开(公告)日：2024-01-18

申请号：US18372949

申请日：2023-09-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Ho LEE ,  Ki Jong NAM ,  Won-Gi HONG

IPC: G06F11/07 ,  G06F3/06 ,  G11C16/10 ,  G01K3/00 ,  G11C16/04 ,  G11C16/26 ,  G06F11/30

CPC classification number: G06F11/076 ,  G06F11/0727 ,  G06F3/0619 ,  G06F3/0659 ,  G11C16/10 ,  G01K3/005 ,  G11C16/0483 ,  G11C16/26 ,  G06F3/0679 ,  G06F11/3058

Abstract: A storage device and a storage system including the same are provided. The storage device includes a nonvolatile memory with a valid page and a free page; a temperature sensor configured to sense a temperature of the nonvolatile memory; and a storage controller configured to implement: a patrol read module configured to read valid data stored in the valid page and identify a number of errors in the read valid data according to a set time period, and a retention module configured to, based on the temperature or the number of errors, read the valid data stored in the valid page, and write the valid data to the free page while controlling a threshold voltage distribution width corresponding to a value of the valid data written to the free page.

公开(公告)号：US20230236736A1

公开(公告)日：2023-07-27

申请号：US18053472

申请日：2022-11-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Ho LEE

IPC: G06F3/06

CPC classification number: G06F3/0616 ,  G06F3/0653 ,  G06F3/0679

Abstract: A storage device includes a cell degradation measurement circuit configured to receive a cell degradation information request command that requests cell degradation information from a host, and provide first cell degradation information to the host in response to the cell degradation information request command, and a non-volatile memory including a plurality of memory cells. The cell degradation measurement circuit writes data to any one of the plurality of memory cells in response to the cell degradation information request command. The cell degradation measurement circuit reads the written data after a predetermined time has elapsed. The first cell degradation information is generated based on an error detection operation performed on the read data.