公开(公告)号：US20250062255A1

公开(公告)日：2025-02-20

申请号：US18670055

申请日：2024-05-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyuseong PARK ,  Jongmin Lee ,  Nara Lee ,  Juik Lee

IPC: H01L23/00 ,  H01L25/065

Abstract: A semiconductor chip includes a semiconductor substrate including an active surface and an inactive surface opposite to the active surface, a wiring layer on the active surface, a front connection pad on the wiring layer, a lower protective insulating layer at least partially covering the wiring layer and including a lower opening that exposes at least a portion of the front connection pad, an upper protective insulating layer including an upper opening communicatively coupled to the lower opening on the lower protective insulating layer, a connection terminal coupled to the front connection pad through the lower opening and the upper opening, and an upper cover insulating layer between the connection terminal and the upper protective insulating layer. The upper protective insulating layer includes an organic material. The upper cover insulating layer includes an inorganic material.

公开(公告)号：US20240290677A1

公开(公告)日：2024-08-29

申请号：US18459111

申请日：2023-08-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyuseong PARK ,  Joongwon SHIN ,  Jong-Min LEE ,  Jimin CHOI

IPC: H01L23/31 ,  H01L21/56 ,  H01L21/768 ,  H01L23/00 ,  H01L23/532

CPC classification number: H01L23/3157 ,  H01L21/56 ,  H01L21/76801 ,  H01L23/3192 ,  H01L23/53295 ,  H01L24/13 ,  H01L23/291 ,  H01L24/05 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05669 ,  H01L2224/05676 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/05686 ,  H01L2224/13021 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/13176 ,  H01L2224/13181 ,  H01L2224/13184 ,  H01L2224/13186 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/0496

Abstract: A semiconductor device includes an interlayer insulating layer, a first protective insulating layer on the interlayer insulating layer, a second protective insulating layer on the first protective insulating layer, and insulating structures disposed in at least one of the first protective insulating layer or the second protective insulating layer, wherein the insulating structures include a first insulating structure including a first material having a first physical property, and a second insulating structure including a second material having a second physical property, and the first material and the second material include a same material, and the first physical property and the second physical property are different physical properties.