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    Method and apparatus for generating depth image
    1.
    发明授权
    Method and apparatus for generating depth image 有权

    公开(公告)号：US12165342B2

    公开(公告)日：2024-12-10

    申请号：US17225574

    申请日：2021-04-08

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jihye Kim ,  Seon Min Rhee ,  Heewon Kim ,  Seungju Han ,  Jaejoon Han

    IPC: G06T7/50 ,  G06N3/02 ,  G06T7/55

    Abstract: A method and apparatus for generating a depth image are provided. The apparatus receives an input image, extracts a feature corresponding to the input image, generates features for each depth resolution by decoding the feature using decoders corresponding to different depth resolutions, estimates probability distributions for each depth resolution by progressively refining the features for each depth resolution, and generates a target depth image corresponding to the input image based on a final estimated probability distribution from among the probability distributions for each depth resolution.

    Semiconductor package device
    2.
    发明授权
    Semiconductor package device 有权

    公开(公告)号：US12107063B2

    公开(公告)日：2024-10-01

    申请号：US17204313

    申请日：2021-03-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ju-Il Choi ,  Gyuho Kang ,  Heewon Kim ,  Junyoung Park ,  Seong-Hoon Bae ,  Jin Ho An

    IPC: H01L23/38 ,  H01L23/00 ,  H01L23/532 ,  H01L23/538

    CPC classification number: H01L24/14 ,  H01L23/53238 ,  H01L23/5386 ,  H01L2224/0401 ,  H01L2224/12105 ,  H01L2224/13024

    Abstract: A semiconductor package device may include a redistribution substrate and a semiconductor chip on a top surface of the redistribution substrate. The redistribution substrate may include an under-bump pattern, which includes including a body portion and a protruding portion extended from the body portion to form a single object, an insulating layer covering a side surface of the body portion, and an outer coupling terminal on the protruding portion. The body portion may have a first diameter in a first direction parallel to the top surface of the redistribution substrate, and the protruding portion may have a second diameter in the first direction, which is smaller than the first diameter. A top surface of the protruding portion may be parallel to the first direction, and a side surface of the protruding portion may be inclined at an angle to a top surface of the body portion.

    NON-VOLATILE MEMORY DEVICE FOR DETECTING DEFECTS OF BIT LINES AND WORD LINES
    9.
    发明公开
    NON-VOLATILE MEMORY DEVICE FOR DETECTING DEFECTS OF BIT LINES AND WORD LINES 审中-公开

    公开(公告)号：US20230144141A1

    公开(公告)日：2023-05-11

    申请号：US17972300

    申请日：2022-10-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Junyoung Ko ,  Sangwan Nam ,  Youse Kim ,  Heewon Kim

    IPC: G11C7/10 ,  G06F11/10

    CPC classification number: G11C7/1057 ,  G06F11/1076

    Abstract: Provided is a non-volatile memory device. The non-volatile memory device includes: a memory cell array including cell strings, each including memory cells respectively connected to word lines; a page buffer circuit including page buffers respectively connected to the memory cells through bit lines, wherein a first page buffer is connected to a first cell string through a first bit line; a control logic circuit configured to control a pre-sensing operation to disconnect the first bit line and the first cell string from each other during a pre-sensing period for detecting a defect of the first bit line and control a post-sensing operation to connect the first bit line and the first cell string to each other in a post-sensing period for detecting defects of the word lines and the first bit line; and a defect detection circuit configured to detect defects of the word lines based the sensing operations.

    Non-volatile memory device for detecting defects of bit lines and word lines
    10.
    发明授权
    Non-volatile memory device for detecting defects of bit lines and word lines 有权

    公开(公告)号：US12131798B2

    公开(公告)日：2024-10-29

    申请号：US17972300

    申请日：2022-10-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Junyoung Ko ,  Sangwan Nam ,  Youse Kim ,  Heewon Kim

    IPC: G11C7/10 ,  G06F11/10

    CPC classification number: G11C7/1057 ,  G06F11/1076

    Abstract: Provided is a non-volatile memory device. The non-volatile memory device includes: a memory cell array including cell strings, each including memory cells respectively connected to word lines; a page buffer circuit including page buffers respectively connected to the memory cells through bit lines, wherein a first page buffer is connected to a first cell string through a first bit line; a control logic circuit configured to control a pre-sensing operation to disconnect the first bit line and the first cell string from each other during a pre-sensing period for detecting a defect of the first bit line and control a post-sensing operation to connect the first bit line and the first cell string to each other in a post-sensing period for detecting defects of the word lines and the first bit line; and a defect detection circuit configured to detect defects of the word lines based the sensing operations.

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