公开(公告)号：US20190382618A1

公开(公告)日：2019-12-19

申请号：US16421633

申请日：2019-05-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kenji TAKAI ,  Sang Eui LEE ,  Hiroshi MIYAZAKI

IPC: C09G1/02 ,  C01B32/156 ,  B24B37/04 ,  H01L21/321 ,  H01L21/768

Abstract: A method of preparing a hydroxyl fullerene dispersion including mixing fullerene, a dispersing agent, a first oxidizing agent, or a combination thereof, in water, crushing the fullerene to obtain pulverized fullerene and oxidizing the pulverized fullerene to obtain hydroxyl fullerene represented by Cx(OH)y, wherein, x is 60, 70, 74, 76 or 78 and y is 12 to 44, and to prepare the hydroxyl fullerene dispersion.

公开(公告)号：US20200024482A1

公开(公告)日：2020-01-23

申请号：US16421568

申请日：2019-05-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kenji TAKAI ,  Sang Eui LEE ,  Ken KOKUBO ,  Eigo MIYAZAKI ,  Do Yoon KIM

IPC: C09G1/02 ,  H01L21/321

Abstract: A polishing slurry including a composite including a hydrophilic fullerene and an ionic compound, a method of manufacturing the same, and a method of manufacturing a semiconductor device.

公开(公告)号：US20190233961A1

公开(公告)日：2019-08-01

申请号：US16176332

申请日：2018-10-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kenji TAKAI ,  Sang Eui LEE ,  Daiki MINAMI

IPC: C25D3/38 ,  C25D7/06 ,  H01B1/04 ,  H05K1/09 ,  H05K3/18

CPC classification number: C25D3/38 ,  C25D7/0607 ,  H01B1/04 ,  H05K1/028 ,  H05K1/092 ,  H05K3/188 ,  H05K2201/0323 ,  H05K2203/0723

Abstract: A plating solution including a metal salt, a hydrophilic fullerene, and water, a metal composite material including a hydrophilic fullerene and a method of manufacturing the same, and a wire, a flexible printed circuit (FPC), and an electronic device including the metal composite material.

公开(公告)号：US20170241039A1

公开(公告)日：2017-08-24

申请号：US15438931

申请日：2017-02-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kenji TAKAI

IPC: C25D15/00 ,  C25D5/02 ,  H05K1/03 ,  C25D1/00 ,  H05K1/02 ,  H05K1/09 ,  C25D3/46 ,  C25D5/48

CPC classification number: C25D15/00 ,  C25D1/00 ,  C25D3/46 ,  C25D5/022 ,  C25D5/48 ,  C25D7/0614 ,  H05K1/028 ,  H05K1/0353 ,  H05K1/09 ,  H05K3/025 ,  H05K2201/026 ,  H05K2201/0323 ,  H05K2201/09681

Abstract: A flexible electrically conductive structure includes: a first polymer layer; and an electrically conductive layer disposed on a surface of the first polymer layer, wherein the electrically conductive layer includes an electrically conductive metal and a nanocarbon material, and wherein the flexible wiring board is to be used with a bending portion provided at least one position of the electrically conductive layer.

公开(公告)号：US20220177728A1

公开(公告)日：2022-06-09

申请号：US17676928

申请日：2022-02-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kenji TAKAI ,  Eigo MIYAZAKI ,  Do Yoon KIM

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/768

Abstract: A polishing slurry including a hydrophilic nanocarbon particle having a nitrogen-containing functional group, and a weight ratio of a nitrogen element relative to a carbon element of the hydrophilic nanocarbon particle, the weight ratio expressed as N/C×100% is greater than or equal to about 5 wt %, and a method of manufacturing a semiconductor device using the polishing slurry.

公开(公告)号：US20210035812A1

公开(公告)日：2021-02-04

申请号：US16742941

申请日：2020-01-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Do Yoon KIM ,  Kenji TAKAI

IPC: H01L21/306 ,  B24B37/20 ,  H01L21/67 ,  C09G1/02 ,  B24B37/015

Abstract: A chemical mechanical polishing method that includes preparing a chemical mechanical polishing device including a platen, a polishing pad, and a polishing slurry supplier, supplying a hot liquid to an inside of the platen to adjust a surface temperature of the platen, disposing the semiconductor substrate and the polishing pad to face each other, supplying polishing slurry including carbon abrasives having an average particle diameter of less than about 10 nm between the semiconductor substrate and the polishing pad, and contacting the surface of the semiconductor substrate with the polishing pad to polish the semiconductor substrate., a method of manufacturing a semiconductor device using the chemical polishing method, and a chemical mechanical polishing device.

公开(公告)号：US20210028024A1

公开(公告)日：2021-01-28

申请号：US16825237

申请日：2020-03-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kenji TAKAI ,  Do Yoon KIM ,  Boun YOON

IPC: H01L21/321 ,  C09G1/04 ,  C09K3/14 ,  B24B37/04 ,  H01L21/288 ,  H01L21/768

Abstract: A method of manufacturing a metal structure including forming a metal layer including a metal and a nano-abrasive and supplying slurry on the metal layer to perform chemical mechanical polishing, a metal structure including a metal and a nano-abrasive having an average particle diameter of less than about 5 nanometers, and a metal wire, a semiconductor device, and an electronic device including the same.

公开(公告)号：US20200291268A1

公开(公告)日：2020-09-17

申请号：US16750060

申请日：2020-01-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kenji TAKAI ,  Eigo MIYAZAKI ,  Do Yoon KIM

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/768

Abstract: A polishing slurry including a hydrophilic nanocarbon particle having a nitrogen-containing functional group, and a weight ratio of a nitrogen element relative to a carbon element of the hydrophilic nanocarbon particle, the weight ratio expressed as N/C×100% is greater than or equal to about 5 wt %, and a method of manufacturing a semiconductor device using the polishing slurry.

公开(公告)号：US20210066086A1

公开(公告)日：2021-03-04

申请号：US16867715

申请日：2020-05-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Do Yoon KIM ,  Kenji TAKAI ,  Deuk Kyu MOON ,  Min Hee YOON ,  Moon Il JUNG

IPC: H01L21/306 ,  C09G1/02 ,  B24B37/015 ,  B24B37/22

Abstract: A chemical mechanical polishing method including preparing a polishing pad including a polishing surface having an elastic modulus at room temperature of about 300 MPa to about 400 MPa, positioning a semiconductor structure having a surface, wherein the surface and the polishing surface of the polishing pad face each other, supplying polishing slurry including nano-abrasive having an average particle diameter of less than about 10 nm between the surface of the semiconductor structure and the polishing surface of the polishing pad, and contacting the surface of the semiconductor structure with the polishing surface of the polishing pad to polish the surface with the polishing slurry. A method of manufacturing a semiconductor device including the the chemical mechanical polishing method, a polishing pad used in the method, and a chemical mechanical polishing device.

公开(公告)号：US20210222311A1

公开(公告)日：2021-07-22

申请号：US17222287

申请日：2021-04-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kenji TAKAI ,  Sang Eui LEE ,  Daiki MINAMI

IPC: C25D3/38 ,  C25D7/06 ,  H01B1/04 ,  H05K3/18 ,  H05K1/09 ,  C25D15/00 ,  C25D15/02

Abstract: A plating solution including a metal salt, a hydrophilic fullerene, and water, a metal composite material including a hydrophilic fullerene and a method of manufacturing the same, and a wire, a flexible printed circuit (FPC), and an electronic device including the metal composite material.