公开(公告)号：US20160049336A1

公开(公告)日：2016-02-18

申请号：US14825556

申请日：2015-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Jong HAN ,  Bon Young KOO ,  Ki Yeon PARK ,  Jae Young PARK ,  Sun Young LEE ,  Kyung In CHOI

IPC: H01L21/8234 ,  H01L21/308

CPC classification number: H01L21/3081 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/30604 ,  H01L21/3086 ,  H01L21/76224

Abstract: A method for manufacturing a semiconductor device includes forming a trench defining a plurality of active fins in a substrate, forming a sacrificial layer on the plurality of active fins, forming a sacrificial oxide layer, and removing the sacrificial oxide layer. The forming the sacrificial oxide layer includes heat-treating the sacrificial layer and surfaces of the plurality of active fins.

Abstract translation: 一种用于制造半导体器件的方法包括在衬底中形成限定多个活性鳍片的沟槽，在多个活性鳍片上形成牺牲层，形成牺牲氧化物层，以及去除牺牲氧化物层。 形成牺牲氧化物层包括热处理牺牲层和多个活性鳍片的表面。

公开(公告)号：US20240047521A1

公开(公告)日：2024-02-08

申请号：US18488381

申请日：2023-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-Chul SUN ,  Dae Won HA ,  Dong Hoon HWANG ,  Jong Hwa BAEK ,  Jong Min JEON ,  Seung Mo HA ,  Kwang Yong YANG ,  Jae Young PARK ,  Young Su CHUNG

IPC: H01L29/06 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/762

CPC classification number: H01L29/0649 ,  H01L27/0886 ,  H01L21/823431 ,  H01L21/76224 ,  H01L21/823481 ,  H01L29/41791

Abstract: A semiconductor device including a device isolation region is provided. The semiconductor device includes first active regions disposed on a substrate, and an isolation region between the active regions. The isolation region includes a first portion formed of a first insulating material, and a second portion formed of a second insulating material, having different characteristics from those of the first insulating material. The first portion is closer to the first active regions than the second portion. The second portion has a bottom surface having a height different from that of a bottom surface of the first portion.

公开(公告)号：US20170358680A1

公开(公告)日：2017-12-14

申请号：US15420512

申请日：2017-01-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong Hoon JEONG ,  Hong Bum PARK ,  HanMei CHOI ,  Jae Young PARK ,  Seung Hyun LIM

IPC: H01L29/78 ,  H01L27/088 ,  H01L21/28 ,  H01L29/51 ,  H01L21/8234 ,  H01L29/40 ,  H01L29/06 ,  H01L29/423

CPC classification number: H01L29/7854 ,  H01L21/28158 ,  H01L21/823431 ,  H01L21/823462 ,  H01L27/0886 ,  H01L29/0657 ,  H01L29/408 ,  H01L29/42364 ,  H01L29/513 ,  H01L29/7851 ,  H01L29/7853

Abstract: A semiconductor device is provided including a fin active region on a substrate. The fin active region includes a lower region, a middle region, and an upper region. The middle region has lateral surfaces with a slope less steep than the lateral surfaces of the upper region. An isolation region is on a lateral surface of the lower region of the fin active region. A gate electrode structure is provided. A gate dielectric structure having an oxidation oxide layer and a deposition oxide layer, while having a thickness greater than half a width of the upper region of the fin active region is provided. The deposition oxide layer is between the gate electrode structure and the fin active region and the gate electrode structure and the isolation region, and the oxidation oxide layer is between the fin active region and the deposition oxide layer.

公开(公告)号：US20210233995A1

公开(公告)日：2021-07-29

申请号：US17212847

申请日：2021-03-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-Chul SUN ,  Dae Won HA ,  Dong Hoon HWANG ,  Jong Hwa BAEK ,  Jong Min JEON ,  Seung Mo HA ,  Kwang Yong YANG ,  Jae Young PARK ,  Young Su CHUNG

IPC: H01L29/06 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/762

Abstract: A semiconductor device including a device isolation region is provided. The semiconductor device includes first active regions disposed on a substrate, and an isolation region between the active regions. The isolation region includes a first portion formed of a first insulating material, and a second portion formed of a second insulating material, having different characteristics from those of the first insulating material. The first portion is closer to the first active regions than the second portion. The second portion has a bottom surface having a height different from that of a bottom surface of the first portion.

公开(公告)号：US20170358457A1

公开(公告)日：2017-12-14

申请号：US15416574

申请日：2017-01-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwa Jin JANG ,  Jae Young PARK ,  Sun Young LEE ,  Ha Kyu SEONG ,  Han Mei CHOI

IPC: H01L21/3065 ,  H01L21/84 ,  H01L21/263 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L21/3065 ,  H01L21/2633 ,  H01L21/3247 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/1054 ,  H01L29/42392 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/66818 ,  H01L29/785 ,  H01L29/7853 ,  H01L29/78696

Abstract: A method of fabricating a semiconductor device is provided. The method includes forming a first fin structure which includes first semiconductor patterns and second semiconductor patterns stacked alternately on a substrate and extends in a first direction, forming an exposed first wire pattern group which includes the second semiconductor patterns by removing the first semiconductor patterns, heat-treating the exposed first wire pattern group, and forming a first gate electrode which surrounds the first wire pattern group and extends in a second direction different from the first direction.