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公开(公告)号：US20230024858A1
公开(公告)日：2023-01-26
申请号：US17834074
申请日：2022-06-07
发明人： Unghwan Pi
摘要： A processing apparatus includes a bit-cell array including at least one bit-cell line including a plurality of bit-cells electrically connected to each other in series, wherein each of the plurality of bit-cells includes: a first magnetic resistor that is configured to store a first resistance value based on a movement of a location of a magnetic domain-wall; a second magnetic resistor that is configured to store a second resistance value, wherein the second resistance value is equal to or less than the first resistance value; a first switching element configured to switch an electrical signal applied to the first magnetic resistor; and a second switching element configured to switch an electrical signal applied to the second magnetic resistor.
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公开(公告)号：US11557720B2
公开(公告)日：2023-01-17
申请号：US17110524
申请日：2020-12-03
发明人： Kyunghwan Lee , Yongseok Kim , Kohji Kanamori , Unghwan Pi , Hyuncheol Kim , Sungwon Yoo , Jaeho Hong
摘要： A memory device includes a magnetic track layer extending on a substrate, the magnetic track layer having a folded structure that is two-dimensionally villi-shaped, a plurality of reading units including a plurality of fixed layers and a tunnel barrier layer between the magnetic track layer and each of the plurality of fixed layers, and a plurality of bit lines extending on different ones of the plurality of reading units, the plurality of reading units being between the magnetic track layer and corresponding ones of the plurality of bit lines.
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公开(公告)号：US11942131B2
公开(公告)日：2024-03-26
申请号：US17834074
申请日：2022-06-07
发明人： Unghwan Pi
CPC分类号： G11C11/1673 , G11C11/1655 , G11C11/1675 , G11C11/1697 , G11C11/54
摘要： A processing apparatus includes a bit-cell array including at least one bit-cell line including a plurality of bit-cells electrically connected to each other in series, wherein each of the plurality of bit-cells includes: a first magnetic resistor that is configured to store a first resistance value based on a movement of a location of a magnetic domain-wall; a second magnetic resistor that is configured to store a second resistance value, wherein the second resistance value is equal to or less than the first resistance value; a first switching element configured to switch an electrical signal applied to the first magnetic resistor; and a second switching element configured to switch an electrical signal applied to the second magnetic resistor.
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公开(公告)号：US11227665B2
公开(公告)日：2022-01-18
申请号：US17001740
申请日：2020-08-25
发明人： Eunsun Noh , Sungchul Lee , Unghwan Pi
摘要： A magnetic memory device includes a reading unit on a substrate, a magnetic track layer on the reading unit, the magnetic track layer including a bottom portion between first and second sidewall portions, and a mold structure on the bottom portion of the magnetic track layer, and between the first and second sidewall portions. The mold structure includes first and second mold layers alternately arranged in a first direction perpendicular to a top surface of the substrate, and the magnetic track layer includes magnetic domains and magnetic domain walls between magnetic domains, the first and second sidewall portions of the magnetic track layer including sidewall notches corresponding to the magnetic domain walls, and the bottom portion includes a bottom notch corresponding to one of the magnetic domain walls.
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