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公开(公告)号：US10431624B2
公开(公告)日：2019-10-01
申请号：US15193229
申请日：2016-06-27
发明人： Seunghoon Han , Yongsung Kim , Seyedeh Mahsa Kamali , Amir Arbabi , Yu Horie , Andrei Faraon , Sungwoo Hwang
IPC分类号： H01L27/14 , H01L27/12 , H01L21/76 , H01L27/146 , H01L21/762
摘要： A method of manufacturing an image sensor includes: preparing a sensor substrate including: a sensor layer including a photosensitive cell; and a signal line layer including lines to receive electric signals from the photosensitive cell; forming a first material layer having a first refractive index on the sensor substrate; and forming a nanopattern layer on the first material layer, the nanopattern layer including a material having a second refractive index different from the first refractive index.
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公开(公告)号：US11968848B2
公开(公告)日：2024-04-23
申请号：US17071364
申请日：2020-10-15
发明人： Seunghoon Han , Kwanghee Lee , Yongwan Jin , Yongsung Kim , Changgyun Shin , Jeongyub Lee , Amir Arbabi , Andrei Faraon , Yu Horie
IPC分类号： H10K39/32 , H01L27/146
CPC分类号： H10K39/32 , H01L27/14621 , H01L27/14636 , H01L27/14645
摘要： An image sensor includes a first light sensor layer including light sensing cells configured to sense first light of an incident light and generate electrical signals based on the sensed first light, and a color filter array layer disposed on the first light sensor layer, and including color filters respectively facing the light sensing cells. The image sensor further includes a second light sensor layer disposed on the color filter array layer, and configured to sense second light of the incident light and generate an electrical signal based on the sensed second light. Each of the color filters includes a nanostructure including a first material having a first refractive index, and a second material having a second refractive index greater than the first refractive index, the first material and the second material being alternately disposed with a period.
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公开(公告)号：US12087810B2
公开(公告)日：2024-09-10
申请号：US17715389
申请日：2022-04-07
发明人： Jinhong Kim , Changsoo Lee , Yongsung Kim , Euncheol Do , Jooho Lee , Yong-Hee Cho
摘要： A capacitor including a lower electrode; an upper electrode apart from the lower electrode; and a between the lower electrode and the upper electrode, the dielectric including a dielectric layer including TiO2, and a leakage current reducing layer including GeO2 in the dielectric layer. Due to the leakage current reducing layer, a leakage current is effectively reduced while a decrease in the dielectric constant of the dielectric thin-film is small.
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公开(公告)号：US11947238B2
公开(公告)日：2024-04-02
申请号：US17469189
申请日：2021-09-08
发明人： Jeongyub Lee , Yongsung Kim , Jaekwan Kim , Changseung Lee
IPC分类号： G02F1/21
CPC分类号： G02F1/218
摘要： Provided are a multilayer thin-film structure and a phase shifting device using the same. The multilayer thin-film structure includes at least one crystallization preventing layer and at least one dielectric layer that are alternately stacked. The at least one crystallization preventing layer includes an amorphous material, and a thickness of the at least one crystallization preventing layer is less than a thickness of the at least one dielectric layer.
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公开(公告)号：US11137661B2
公开(公告)日：2021-10-05
申请号：US16406677
申请日：2019-05-08
发明人： Jeongyub Lee , Yongsung Kim , Jaekwan Kim , Changseung Lee
IPC分类号： G02F1/21
摘要： Provided are a multilayer thin-film structure and a phase shifting device using the same. The multilayer thin-film structure includes at least one crystallization preventing layer and at least one dielectric layer that are alternately stacked. The at least one crystallization preventing layer includes an amorphous material, and a thickness of the at least one crystallization preventing layer is less than a thickness of the at least one dielectric layer.
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公开(公告)号：US10670891B2
公开(公告)日：2020-06-02
申请号：US15632640
申请日：2017-06-26
申请人： SAMSUNG ELECTRONICS CO., LTD. , IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
发明人： Kiyeon Yang , Youngsun Choi , Seokho Song , Jaewoong Yoon , Choloong Han , Yongsung Kim , Jeongyub Lee , Changseung Lee
摘要： Nonreciprocal optical transmission devices and optical apparatuses including the nonreciprocal optical transmission devices are provided. A nonreciprocal optical transmission device includes an optical input portion, an optical output portion, and an intermediate connecting portion interposed between the optical input portion and the optical output portion, and comprising optical waveguides. A complex refractive index of any one or any combination of the optical waveguides changes between the optical input portion and the optical output portion, and a transmission direction of light through the nonreciprocal optical transmission device is controlled by a change in the complex refractive index.
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公开(公告)号：US12051717B2
公开(公告)日：2024-07-30
申请号：US17702155
申请日：2022-03-23
发明人： Boeun Park , Yongsung Kim , Jeonggyu Song , Jooho Lee
摘要： An anti-ferroelectric thin-film structure including a dielectric layer including an anti-ferroelectric phase of hafnium oxide; and an inserted layer in the dielectric layer, the inserted layer including an oxide. An electronic device to which the anti-ferroelectric thin-film structure has been applied may secure an operating voltage section with little hysteresis.
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8.发明授权公开(公告)号：US12015073B2
公开(公告)日：2024-06-18
申请号：US17984877
申请日：2022-11-10
发明人： Woojin Lee , Kiyoung Lee , Yongsung Kim , Eunsun Kim
CPC分类号： H01L29/516 , C01G23/006 , C01G35/006 , H10B51/00 , H10B53/00 , C01P2002/34 , C01P2002/52 , C01P2002/77 , C01P2006/40
摘要： A thin film structure including a dielectric material layer and an electronic device to which the thin film structure is applied are provided. The dielectric material layer includes a compound expressed by ABO3, wherein at least one of A and B in ABO3 is substituted and doped with another atom having a larger atom radius, and ABO3 becomes A1-xA′xB1-yB′yO3 (where x>=0, y>=0, at least one of x and y≠0, a dopant A′ has an atom radius greater than A and/or a dopant B′ has an atom radius greater than B) through substitution and doping. A dielectric material property of the dielectric material layer varies according to a type of a substituted and doped dopant and a substitution doping concentration.
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9.发明授权公开(公告)号：US11532722B2
公开(公告)日：2022-12-20
申请号：US16779863
申请日：2020-02-03
发明人： Woojin Lee , Kiyoung Lee , Yongsung Kim , Eunsun Kim
IPC分类号： H01L29/51 , C01G23/00 , H01L27/11585 , H01L27/11502 , C01G35/00
摘要： A thin film structure including a dielectric material layer and an electronic device to which the thin film structure is applied are provided. The dielectric material layer includes a compound expressed by ABO3, wherein at least one of A and B in ABO3 is substituted and doped with another atom having a larger atom radius, and ABO3 becomes A1-xA′xB1-yB′yO3 (where x>=0, y>=0, at least one of x and y≠0, a dopant A′ has an atom radius greater than A and/or a dopant B′ has an atom radius greater than B) through substitution and doping. A dielectric material property of the dielectric material layer varies according to a type of a substituted and doped dopant and a substitution doping concentration.
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公开(公告)号：US10976472B2
公开(公告)日：2021-04-13
申请号：US15805864
申请日：2017-11-07
发明人： Jeongyub Lee , Changseung Lee , Yongsung Kim , Jaekwan Kim , Byonggwon Song , Sanghoon Song , Kiyeon Yang
摘要： A meta-optical device and a method of manufacturing the same are provided. The method includes depositing a group III-V compound semiconductor on a substrate, forming an anti-oxidation layer, performing crystallization by using post annealing, removing the anti-oxidation layer, and manufacturing a meta-optical device by using patterning.
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