-
公开(公告)号：US11968848B2
公开(公告)日：2024-04-23
申请号：US17071364
申请日：2020-10-15
发明人： Seunghoon Han , Kwanghee Lee , Yongwan Jin , Yongsung Kim , Changgyun Shin , Jeongyub Lee , Amir Arbabi , Andrei Faraon , Yu Horie
IPC分类号： H10K39/32 , H01L27/146
CPC分类号： H10K39/32 , H01L27/14621 , H01L27/14636 , H01L27/14645
摘要： An image sensor includes a first light sensor layer including light sensing cells configured to sense first light of an incident light and generate electrical signals based on the sensed first light, and a color filter array layer disposed on the first light sensor layer, and including color filters respectively facing the light sensing cells. The image sensor further includes a second light sensor layer disposed on the color filter array layer, and configured to sense second light of the incident light and generate an electrical signal based on the sensed second light. Each of the color filters includes a nanostructure including a first material having a first refractive index, and a second material having a second refractive index greater than the first refractive index, the first material and the second material being alternately disposed with a period.
-
公开(公告)号：US11808918B2
公开(公告)日：2023-11-07
申请号：US17499170
申请日：2021-10-12
发明人： Jaekwan Kim , Jeongyub Lee , Seunghoon Han , Yongsung Kim , Byunghoon Na , Jangwoo You , Changseung Lee
CPC分类号： G02B1/002 , G02B5/005 , G02B5/1814 , G02B27/4211 , B82Y20/00
摘要： Provided are meta-surface optical device and methods of manufacturing the same. The meta-surface optical device may include a meta-surface arranged on a region of a substrate and a light control member arranged around the meta-surface. The light control member may be arranged on or below the substrate. A material layer formed of the same material used to form the meta-surface may be disposed between the light control member and the substrate. Also, the meta-surface may be a first meta-surface arranged on an upper surface of the substrate, and a second meta-surface may be arranged on a bottom surface of the substrate. Also, the meta-surface may include a first meta-surface and at least one second meta-surface may formed on the first meta-surface, and the light control member may be arranged around the at least one second meta-surface.
-
公开(公告)号：US11329174B2
公开(公告)日：2022-05-10
申请号：US16848165
申请日：2020-04-14
发明人： Jeongyub Lee , Woong Ko , Changseung Lee , Hongkyu Park , Chanwook Baik , Hongseok Lee , Wonjae Joo
IPC分类号： H01L31/0352 , H01L27/144 , H01L31/02 , H01L31/0224 , H01L31/0288 , H01L31/105 , H01L31/18
摘要： A meta optical device configured to sense incident light includes a plurality of nanorods each having a shape dimension less than a wavelength of the incident light. Each nanorod includes a first conductivity type semiconductor layer, an intrinsic semiconductor layer, and a second conductivity type semiconductor layer. The meta optical device may separate and sense wavelengths of the incident light.
-
公开(公告)号：US20210262081A1
公开(公告)日：2021-08-26
申请号：US16920913
申请日：2020-07-06
发明人： Minsung Lee , Youngkwan Cha , Yountaek Ryu , Kyungwoo Park , Woonyoung Choi , Ducksu Kim , Jeongyub Lee , Changseung Lee
摘要： A deposition apparatus forms a material layer on a substrate in a deposition chamber. Provided in the deposition chamber are at least one deposition material providing device that provides a deposition material to the substrate, a deposition mask that defines a deposition area on the substrate, and a stage that supports the substrate. The stage is movable in X and Y directions in a plane parallel to the substrate.
-
公开(公告)号：US10976472B2
公开(公告)日：2021-04-13
申请号：US15805864
申请日：2017-11-07
发明人： Jeongyub Lee , Changseung Lee , Yongsung Kim , Jaekwan Kim , Byonggwon Song , Sanghoon Song , Kiyeon Yang
摘要： A meta-optical device and a method of manufacturing the same are provided. The method includes depositing a group III-V compound semiconductor on a substrate, forming an anti-oxidation layer, performing crystallization by using post annealing, removing the anti-oxidation layer, and manufacturing a meta-optical device by using patterning.
-
公开(公告)号：US20230244017A1
公开(公告)日：2023-08-03
申请号：US17891332
申请日：2022-08-19
发明人： Eunhyoung CHO , Hyochul Kim , Sunghee Lee , Jeongyub Lee
IPC分类号： G02B5/28
CPC分类号： G02B5/285
摘要： An optical apparatus includes a lower optical layer; a nanostructure layer disposed on the lower optical layer and having an active region and a non-active region; and a reflective pad disposed between the lower optical layer and the nanostructure layer to face the non-active region of the nanostructure layer, wherein the nanostructure layer includes a first dielectric patterned in the active region and unpatterned in the non-active region and a second dielectric filled between patterns of the first dielectric, and the first dielectric includes a first material and the second dielectric includes a second material different from the first material and having a different refractive index from a refractive index of the first material.
-
公开(公告)号：US10459258B2
公开(公告)日：2019-10-29
申请号：US15668297
申请日：2017-08-03
发明人： Chanwook Baik , Changwon Lee , Heejeong Jeong , Jaekwan Kim , Byonggwon Song , Jeongyub Lee
摘要： A method of designing a meta optical device is provided. The method includes: setting, via a processor, design data for arrangement and dimensions of a nanostructure of the meta optical device, according to a function to be implemented by the meta optical device; obtaining a phase change graph with respect to a change in the dimensions; setting a shape dimension region with phase defect in the phase change graph; and substituting a shape dimension with phase defect, which is included in the shape dimension region with phase defect among the dimensions included in the design data, with a substitution value that is outside the shape dimension region with phase defect. Accordingly, a meta optical device having no phase defect is implemented.
-
公开(公告)号：US10124438B2
公开(公告)日：2018-11-13
申请号：US15065488
申请日：2016-03-09
发明人： Jeongyub Lee , Yunsung Woo , Changseung Lee , Eunhyoung Cho
IPC分类号： H05K3/02 , B23K26/0622 , B23K26/384 , H05K3/18 , B23K26/08 , H01L31/18 , H05K3/00 , B23K26/386 , B23K26/082 , H05K3/14
摘要： A method of patterning holes includes placing a substrate on a stage of a laser system, the substrate having a graphene layer on a surface thereof, generating a pulse laser from the laser system, and forming a plurality of hole patterns spaced apart from each other on the graphene layer by irradiating the pulse laser while the graphene layer is in motion.
-
公开(公告)号：US09722068B2
公开(公告)日：2017-08-01
申请号：US15026681
申请日：2014-09-16
发明人： Xianyu Wenxu , Yongsung Kim , Changyoul Moon , Yongyoung Park , Wooyoung Yang , Jeongyub Lee , Jooho Lee
IPC分类号： H01L29/78 , H01L29/45 , H01L29/66 , H01L29/778 , H01L29/06 , H01L29/16 , H01L21/306 , H01L21/3105 , H01L29/08 , H01L29/10 , H01L29/24 , H01L29/423 , H01L29/47
CPC分类号： H01L29/78 , H01L21/30625 , H01L21/31051 , H01L29/0653 , H01L29/0847 , H01L29/1033 , H01L29/1606 , H01L29/24 , H01L29/42364 , H01L29/4238 , H01L29/45 , H01L29/47 , H01L29/66045 , H01L29/7781
摘要： Provided are semiconductor devices and methods of manufacturing the same. A semiconductor device may include a source, a drain, a semiconductor element between the source and the drain, and a graphene layer that is provided on the source and the semiconductor element and is spaced apart from the drain. Surfaces of the source and the drain are substantially co-planar with a surface of the semiconductor element. The semiconductor element may be spaced apart from the source and may contact the drain. The graphene layer may have a planar structure. A gate insulating layer and a gate may be provided on the graphene layer. The semiconductor device may be a transistor. The semiconductor device may have a barristor structure. The semiconductor device may be a planar type graphene barristor.
-
公开(公告)号：US20240203788A1
公开(公告)日：2024-06-20
申请号：US18541091
申请日：2023-12-15
发明人： Eunhyoung CHO , Sunghee Lee , Jeongyub Lee , Hanboram Lee
IPC分类号： H01L21/768 , H01L21/285
CPC分类号： H01L21/76849 , H01L21/28562 , H01L21/76831 , H01L21/76861 , H01L21/76879
摘要： A method of selectively forming a layer according to atomic layer deposition includes providing a substrate which includes a first region consisting of a first material and having a first surface and a second region consisting of a second material and having a second surface, forming a first reaction inhibition layer on the second surface using a reaction inhibitor selectively adsorbed on the second surface, selectively forming a first deposition layer on the first surface using a first precursor and a first reactant, wherein the first reactant reacts with the first precursor to form an atomic layer and does not react with the reaction inhibitor to form the atomic layer, and converting the first reaction inhibition layer on the second surface into a second deposition layer using a second reactant which reacts with the first reaction inhibition layer to form the atomic layer.
-
-
-
-
-
-
-
-
-
搜索结果
19 条记录 (耗时 0.032 秒)
