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公开(公告)号:US20230402107A1
公开(公告)日:2023-12-14
申请号:US17835324
申请日:2022-06-08
Applicant: SanDisk Technologies LLC
Inventor: Nitin Gupta , Shiv Harit Mathur , Ramakrishnan Subramanian , Dmitry Vaysman
CPC classification number: G11C16/30 , G11C11/1697
Abstract: An interface circuit that can operate in toggle mode at data high transfer rates while reducing the self-induced noise is presented. The high speed toggle mode interface supplies a data signal to a data line or other transfer line by a driver circuit. The driver circuit includes a pair of series connected transistors connected between a high supply level and a low supply level, where the data line is supplied from a node between the two transistors. A resistor is connected between one or both of the transistors and one of the supply levels, with a capacitor connected between the low supply level and a node between the resistor and the transistor. The resistor helps to isolate the transistor from the supply level while the capacitor can act as current reservoir to boost the current to the transistor during data transition, reducing the noise seen by the voltage supply.
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公开(公告)号:US09811267B1
公开(公告)日:2017-11-07
申请号:US15294313
申请日:2016-10-14
Applicant: SANDISK TECHNOLOGIES LLC
Inventor: Nian Niles Yang , Grishma Shah , Phil Reusswig , Dmitry Vaysman
IPC: G06F3/06
CPC classification number: G06F3/061 , G06F1/206 , G06F3/0655 , G06F3/0688 , G11C7/04 , G11C16/0483 , G11C16/10 , G11C16/26 , G11C16/3418 , G11C16/3459 , H01L27/11582
Abstract: A non-volatile storage apparatus comprises a controller, one or more memory packages, a system temperature sensor, and one or more memory temperature sensors. The system temperature sensor is located at or on the controller. Each of the one or more memory temperature sensors are positioned at one of the one or more memory packages. The controller monitors system temperature using the system temperature sensor. If the system temperature is above a first threshold, then temperature is sensed at the memory packages using the one or more memory temperature sensors. Individual memory packages have their performance throttled if their temperature exceeds a second threshold.
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公开(公告)号:US11984168B2
公开(公告)日:2024-05-14
申请号:US17835324
申请日:2022-06-08
Applicant: SanDisk Technologies LLC
Inventor: Nitin Gupta , Shiv Harit Mathur , Ramakrishnan Subramanian , Dmitry Vaysman
CPC classification number: G11C16/30 , G11C7/1096 , G11C11/1697
Abstract: An interface circuit that can operate in toggle mode at data high transfer rates while reducing the self-induced noise is presented. The high speed toggle mode interface supplies a data signal to a data line or other transfer line by a driver circuit. The driver circuit includes a pair of series connected transistors connected between a high supply level and a low supply level, where the data line is supplied from a node between the two transistors. A resistor is connected between one or both of the transistors and one of the supply levels, with a capacitor connected between the low supply level and a node between the resistor and the transistor. The resistor helps to isolate the transistor from the supply level while the capacitor can act as current reservoir to boost the current to the transistor during data transition, reducing the noise seen by the voltage supply.
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