公开(公告)号：US09679661B1

公开(公告)日：2017-06-13

申请号：US15195492

申请日：2016-06-28

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Zelei Guo ,  Joanna Lai ,  Deepak Raghu

IPC: G11C16/06 ,  G11C16/26 ,  G11C16/04 ,  G11C16/08 ,  G06F11/07 ,  G11C7/06 ,  G11C16/28

CPC classification number: G11C16/26 ,  G06F11/22 ,  G11C7/062 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/28 ,  G11C29/021 ,  G11C29/028 ,  G11C29/12 ,  G11C29/16 ,  G11C29/50004 ,  G11C29/52 ,  G11C2029/0409 ,  G11C2029/0411 ,  G11C2029/1204 ,  G11C2029/5002

Abstract: Performance improvement features can improve the performance of read processes under the right conditions. In order to selectively use the performance improvement features, the system conducts active read sampling to obtain information about bit error rate and then enables the performance improvement feature(s) for future read processes based on the information about bit error rate.

公开(公告)号：US09633738B1

公开(公告)日：2017-04-25

申请号：US15195583

申请日：2016-06-28

Applicant: SanDisk Technologies LLC

Inventor： Zelei Guo ,  Pao-Ling Koh ,  Henry Chin ,  Pitamber Shukla ,  Deepak Raghu ,  Dana Lee

IPC: G11C16/04 ,  G11C16/16 ,  G11C16/10 ,  G11C16/30

CPC classification number: G11C16/16 ,  G11C16/10 ,  G11C16/14 ,  G11C16/22 ,  G11C16/30

Abstract: A storage system includes a controller that is configured to make host data inaccessible. To do so, the controller may control power control circuitry to supply pulses to storage locations storing host data. The pulses may include flash write pulses but no erase pulses, or a combination of flash write pulses and erase pulses. If erase pulses are supplied, the number of the erase pulses may be less than the number supplied for performance of a default erase operation.

公开(公告)号：US10102920B2

公开(公告)日：2018-10-16

申请号：US15237196

申请日：2016-08-15

Applicant: SanDisk Technologies LLC

Inventor： Philip Reusswig ,  Deepak Raghu ,  Zelei Guo ,  Chris Nga Yee Yip

IPC: G11C29/02 ,  G06F11/07 ,  G11C29/50 ,  G06F11/14 ,  G11C11/56 ,  G11C16/26

Abstract: A storage device with a memory may utilize an optimized read retry operation. A read retry table includes a number of read retry cases with updated read thresholds. The read thresholds in the read retry table may be used to avoid errors caused by shifting of charge levels. The optimization of read retry includes weighting or reordering of the read retry cases in the read retry table. The selection of a read retry case (and corresponding read thresholds) are determined based on the weighting or reordering.

公开(公告)号：US20180046527A1

公开(公告)日：2018-02-15

申请号：US15237196

申请日：2016-08-15

Applicant: SanDisk Technologies LLC

Inventor： Philip Reusswig ,  Deepak Raghu ,  Zelei Guo ,  Chris Nga Yee Yip

IPC: G06F11/07 ,  G06F11/14 ,  G11C29/50

CPC classification number: G06F11/076 ,  G06F11/1435 ,  G11C11/5642 ,  G11C16/26 ,  G11C29/021 ,  G11C29/028 ,  G11C29/50004 ,  G11C2029/5004

Abstract: A storage device with a memory may utilize an optimized read retry operation. A read retry table includes a number of read retry cases with updated read thresholds. The read thresholds in the read retry table may be used to avoid errors caused by shifting of charge levels. The optimization of read retry includes weighting or reordering of the read retry cases in the read retry table. The selection of a read retry case (and corresponding read thresholds) are determined based on the weighting or reordering.