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公开(公告)号：US07505299B2
公开(公告)日：2009-03-17
申请号：US11976531
申请日：2007-10-25
CPC分类号： G11C11/405 , G11C11/4097 , H01L27/0207 , H01L27/108 , H01L27/10814 , H01L27/10873
摘要： A semiconductor memory device that can achieve high-speed operation or that is highly integrated and simultaneously can achieve high-speed operation is provided. Transistors are disposed on both sides of diffusion layer regions to which capacitor for storing information is connected and other diffusion layer region of each transistor is connected to the same bit line. When access to a memory cell is made, two transistors are activated and the information is read. When writing operation to the memory cell is carried out, two transistors are used and electric charges are written to the capacitor.
摘要翻译： 提供了可以实现高速操作或高度集成并同时实现高速操作的半导体存储器件。 晶体管设置在扩散层区域的两侧，用于存储信息的电容器被连接到，并且每个晶体管的其它扩散层区域连接到相同的位线。 当访问存储器单元时，两个晶体管被激活并且读取该信息。 当对存储单元进行写操作时，使用两个晶体管，并将电荷写入电容器。
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公开(公告)号：US20060158924A1
公开(公告)日：2006-07-20
申请号：US11280170
申请日：2005-11-17
IPC分类号： G11C11/24
CPC分类号： G11C11/4094 , G11C7/12 , G11C7/18 , G11C11/4074 , G11C11/4097 , G11C2211/4013 , H01L27/0207 , H01L27/10882
摘要： A write command is inputted from an outside, voltages of bit lines become VDL and VSS, and a voltage in accordance with a threshold voltage (LVT: low threshold voltage, MVT: mid threshold voltage, HVT: high threshold voltage) of a memory cell transistor is written into a storage node of a capacitor via the memory cell transistor. Thereafter, when a plate line connected to a plate side of the capacitor is driven from voltage VPL to voltage VPH and the voltage of the storage node is increased due to coupling, the voltage VDL of the bit line is reduced to the voltage VDP, and the voltage excessively written into the storage node is reduced in accordance with a level of a threshold voltage of the memory cell transistor, thereby reducing a variation in the voltage of the storage node due to a variation in the threshold voltage.
摘要翻译： 从外部输入写命令，位线的电压变为VDL和VSS，以及根据存储单元的阈值电压（LVT：低阈值电压，MVT：中间阈值电压，HVT：高阈值电压）的电压 晶体管经由存储单元晶体管写入电容器的存储节点。 此后，当连接到电容器的板侧的板线从电压VPL驱动到电压VPH并且存储节点的电压由于耦合而增加时，位线的电压VDL被降低到电压VDP，并且 根据存储单元晶体管的阈值电压的电平降低过度写入存储节点的电压，从而减小由于阈值电压的变化引起的存储节点的电压的变化。
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公开(公告)号：US20050265068A1
公开(公告)日：2005-12-01
申请号：US11134476
申请日：2005-05-23
IPC分类号： H01L27/108 , G11C11/24 , G11C11/405 , G11C11/4097 , H01L21/8242 , H01L27/02
CPC分类号： G11C11/405 , G11C11/4097 , H01L27/0207 , H01L27/108 , H01L27/10814 , H01L27/10873
摘要： A semiconductor memory device that can achieve high-speed operation or that is highly integrated and simultaneously can achieve high-speed operation is provided. Transistors are disposed on both sides of diffusion layer regions to which capacitor for storing information is connected and other diffusion layer region of each transistor is connected to the same bit line. When access to a memory cell is made, two transistors are activated and the information is read. When writing operation to the memory cell is carried out, two transistors are used and electric charges are written to the capacitor.
摘要翻译： 提供了可以实现高速操作或高度集成并同时实现高速操作的半导体存储器件。 晶体管设置在扩散层区域的两侧，用于存储信息的电容器被连接到，并且每个晶体管的其它扩散层区域连接到相同的位线。 当访问存储器单元时，两个晶体管被激活并且读取该信息。 当对存储单元进行写操作时，使用两个晶体管，并将电荷写入电容器。
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公开(公告)号：US07310256B2
公开(公告)日：2007-12-18
申请号：US11134476
申请日：2005-05-23
CPC分类号： G11C11/405 , G11C11/4097 , H01L27/0207 , H01L27/108 , H01L27/10814 , H01L27/10873
摘要： A semiconductor memory device that can achieve high-speed operation or that is highly integrated and simultaneously can achieve high-speed operation is provided. Transistors are disposed on both sides of diffusion layer regions to which capacitor for storing information is connected and other diffusion layer region of each transistor is connected to the same bit line. When access to a memory cell is made, two transistors are activated and the information is read. When writing operation to the memory cell is carried out, two transistors are used and electric charges are written to the capacitor.
摘要翻译： 提供了可以实现高速操作或高度集成并同时实现高速操作的半导体存储器件。 晶体管设置在扩散层区域的两侧，用于存储信息的电容器被连接到，并且每个晶体管的其它扩散层区域连接到相同的位线。 当访问存储器单元时，两个晶体管被激活并且读取该信息。 当对存储单元进行写操作时，使用两个晶体管，并将电荷写入电容器。
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公开(公告)号：US20070147160A1
公开(公告)日：2007-06-28
申请号：US11467793
申请日：2006-08-28
IPC分类号： G11C8/00
CPC分类号： G11C7/1027 , G11C7/1012 , G11C7/1048 , G11C7/1051 , G11C7/1066 , G11C7/1069 , G11C7/1072 , G11C7/1078 , G11C7/1096 , G11C7/12 , G11C7/22 , G11C11/4076 , G11C11/4091 , G11C11/4093 , G11C11/4094 , G11C11/4096 , G11C29/028 , G11C2207/002
摘要： A column circuit that amplifies signals read from a sense amplifier array SAA to local input/output lines LIO in sub-amplifiers SAMP to transfer the amplified signals to main input/output lines MIO is provided. A current control circuit IC that can set one of two kinds of currents according to read enable signals RD1, RD2 is provided in each sub-amplifier SAMP. The read enable signals RD1, RD2 are generated at timings corresponding to the number of cycles in burst read operation under control of the timing controller. Current in the current control circuit IC is set to be large by the RD1 in burst read operation cycle just after activation of a memory bank, while current in the current control circuit IC is set to be small by the RD2 in the next and subsequent burst read cycles. Accordingly, expansion of an operation margin or reduction of power consumption can be realized in a semiconductor device including a semiconductor memory such as a DRAM.
摘要翻译： 提供了一种列电路，其将从读出放大器阵列SAA读取的信号放大到子放大器SAMP中的本地输入/输出线LIO，以将放大的信号传送到主输入/输出线MIO。 在每个子放大器SAMP中设置有能够根据读使能信号RD1，RD2设定两种电流之一的电流控制电路IC。 在定时控制器的控制下，在与脉冲串读取操作中的周期数相对应的定时，生成读使能信号RD 1，RD 2。 电流控制电路IC中的电流在刚刚激活存储体之后的脉冲串读取操作周期中的RD 1被设置为较大，而当前控制电路IC中的电流被下一个的RD 2设置得较小时， 随后的突发读取周期。 因此，可以在包括诸如DRAM的半导体存储器的半导体器件中实现操作余量的扩大或功率消耗的降低。
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公开(公告)号：US20070139995A1
公开(公告)日：2007-06-21
申请号：US11705420
申请日：2007-02-13
CPC分类号： G11C11/4094 , G11C7/12 , G11C7/18 , G11C11/4074 , G11C11/4097 , G11C2211/4013 , H01L27/0207 , H01L27/10882
摘要： A write command is inputted from an outside, voltages of bit lines become VDL and VSS, and a voltage in accordance with a threshold voltage (LVT: low threshold voltage, MVT: mid threshold voltage, HVT: high threshold voltage) of a memory cell transistor is written into a storage node of a capacitor via the memory cell transistor. Thereafter, when a plate line connected to a plate side of the capacitor is driven from voltage VPL to voltage VPH and the voltage of the storage node is increased due to coupling, the voltage VDL of the bit line is reduced to the voltage VDP, and the voltage excessively written into the storage node is reduced in accordance with a level of a threshold voltage of the memory cell transistor, thereby reducing a variation in the voltage of the storage node due to a variation in the threshold voltage.
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公开(公告)号：US20090116309A1
公开(公告)日：2009-05-07
申请号：US12348306
申请日：2009-01-04
IPC分类号： G11C7/00
CPC分类号： G11C7/1027 , G11C7/1012 , G11C7/1048 , G11C7/1051 , G11C7/1066 , G11C7/1069 , G11C7/1072 , G11C7/1078 , G11C7/1096 , G11C7/12 , G11C7/22 , G11C11/4076 , G11C11/4091 , G11C11/4093 , G11C11/4094 , G11C11/4096 , G11C29/028 , G11C2207/002
摘要： A column circuit that amplifies signals read from a sense amplifier array SAA to local input/output lines LIO in sub-amplifiers SAMP to transfer the amplified signals to main input/output lines MIO is provided. A current control circuit IC that can set one of two kinds of currents according to read enable signals RD1, RD2 is provided in each sub-amplifier SAMP. The read enable signals RD1, RD2 are generated at timings corresponding to the number of cycles in burst read operation under control of the timing controller. Current in the current control circuit IC is set to be large by the RD1 in burst read operation cycle just after activation of a memory bank, while current in the current control circuit IC is set to be small by the RD2 in the next and subsequent burst read cycles. Accordingly, expansion of an operation margin or reduction of power consumption can be realized in a semiconductor device including a semiconductor memory such as a DRAM.
摘要翻译： 提供了一种列电路，其将从读出放大器阵列SAA读取的信号放大到子放大器SAMP中的本地输入/输出线LIO，以将放大的信号传送到主输入/输出线MIO。 在每个子放大器SAMP中提供可以根据读使能信号RD1，RD2设置两种电流之一的电流控制电路IC。 在定时控制器的控制下，在脉冲串读取操作中的周期数对应的定时产生读使能信号RD1，RD2。 电流控制电路IC中的电流在刚刚激活存储体之后的脉冲串读取操作周期中的RD1被设置为较大，而当前控制电路IC中的电流在下一个和随后的脉冲串中被RD2设置得较小 读周期。 因此，可以在包括诸如DRAM的半导体存储器的半导体器件中实现操作余量的扩大或功率消耗的降低。
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8.发明授权Semiconductor memory device having a main amplifier equipped with a current control circuit in a burst read operation 失效具有在突发读取操作中配备有电流控制电路的主放大器的半导体存储器件公开(公告)号：US07489588B2
公开(公告)日：2009-02-10
申请号：US11924353
申请日：2007-10-25
IPC分类号： G11C7/08
CPC分类号： G11C7/1027 , G11C7/1012 , G11C7/1048 , G11C7/1051 , G11C7/1066 , G11C7/1069 , G11C7/1072 , G11C7/1078 , G11C7/1096 , G11C7/12 , G11C7/22 , G11C11/4076 , G11C11/4091 , G11C11/4093 , G11C11/4094 , G11C11/4096 , G11C29/028 , G11C2207/002
摘要： A column circuit that amplifies signals read from a sense amplifier array SAA to local input/output lines LIO in sub-amplifiers SAMP to transfer the amplified signals to main input/output lines MIO is provided. A current control circuit IC that can set one of two kinds of currents according to read enable signals RD1, RD2 is provided in each sub-amplifier SAMP. The read enable signals RD1, RD2 are generated at timings corresponding to the number of cycles in burst read operation under control of the timing controller. Current in the current control circuit IC is set to be large by the RD1 in burst read operation cycle just after activation of a memory bank, while current in the current control circuit IC is set to be small by the RD2 in the next and subsequent burst read cycles. Accordingly, expansion of an operation margin or reduction of power consumption can be realized in a semiconductor device including a semiconductor memory such as a DRAM.
摘要翻译： 提供了一种列电路，其将从读出放大器阵列SAA读取的信号放大到子放大器SAMP中的本地输入/输出线LIO，以将放大的信号传送到主输入/输出线MIO。 在每个子放大器SAMP中提供可以根据读使能信号RD1，RD2设置两种电流之一的电流控制电路IC。 在定时控制器的控制下，在脉冲串读取操作中的周期数对应的定时产生读使能信号RD1，RD2。 电流控制电路IC中的电流在刚刚激活存储体之后的脉冲串读取操作周期中的RD1被设置为较大，而当前控制电路IC中的电流在下一个和随后的脉冲串中被RD2设置得较小 读周期。 因此，可以在包括诸如DRAM的半导体存储器的半导体器件中实现操作余量的扩大或功率消耗的降低。
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9.发明授权Semiconductor memory device with sub-amplifiers having a variable current source 有权具有具有可变电流源的子放大器的半导体存储器件公开(公告)号：US07304910B1
公开(公告)日：2007-12-04
申请号：US11467793
申请日：2006-08-28
CPC分类号： G11C7/1027 , G11C7/1012 , G11C7/1048 , G11C7/1051 , G11C7/1066 , G11C7/1069 , G11C7/1072 , G11C7/1078 , G11C7/1096 , G11C7/12 , G11C7/22 , G11C11/4076 , G11C11/4091 , G11C11/4093 , G11C11/4094 , G11C11/4096 , G11C29/028 , G11C2207/002
摘要： A column circuit that amplifies signals read from a sense amplifier array SAA to local input/output lines LIO in sub-amplifiers SAMP to transfer the amplified signals to main input/output lines MIO is provided. A current control circuit IC that can set one of two kinds of currents according to read enable signals RD1, RD2 is provided in each sub-amplifier SAMP. The read enable signals RD1, RD2 are generated at timings corresponding to the number of cycles in burst read operation under control of the timing controller. Current in the current control circuit IC is set to be large by the RD1 in burst read operation cycle just after activation of a memory bank, while current in the current control circuit IC is set to be small by the RD2 in the next and subsequent burst read cycles. Accordingly, expansion of an operation margin or reduction of power consumption can be realized in a semiconductor device including a semiconductor memory such as a DRAM.
摘要翻译： 提供了一种列电路，其将从读出放大器阵列SAA读取的信号放大到子放大器SAMP中的本地输入/输出线LIO，以将放大的信号传送到主输入/输出线MIO。 在每个子放大器SAMP中设置有能够根据读使能信号RD1，RD2设定两种电流之一的电流控制电路IC。 在定时控制器的控制下，在与脉冲串读取操作中的周期数相对应的定时，生成读使能信号RD 1，RD 2。 电流控制电路IC中的电流在刚刚激活存储体之后的脉冲串读取操作周期中的RD 1被设置为较大，而当前控制电路IC中的电流被下一个的RD 2设置得较小时， 随后的突发读取周期。 因此，可以在包括诸如DRAM的半导体存储器的半导体器件中实现操作余量的扩大或功率消耗的降低。
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公开(公告)号：US07193884B2
公开(公告)日：2007-03-20
申请号：US11280170
申请日：2005-11-17
IPC分类号： G11C11/24
CPC分类号： G11C11/4094 , G11C7/12 , G11C7/18 , G11C11/4074 , G11C11/4097 , G11C2211/4013 , H01L27/0207 , H01L27/10882
摘要： A write command is inputted from an outside, voltages of bit lines become VDL and VSS, and a voltage in accordance with a threshold voltage (LVT: low threshold voltage, MVT: mid threshold voltage, HVT: high threshold voltage) of a memory cell transistor is written into a storage node of a capacitor via the memory cell transistor. Thereafter, when a plate line connected to a plate side of the capacitor is driven from voltage VPL to voltage VPH and the voltage of the storage node is increased due to coupling, the voltage VDL of the bit line is reduced to the voltage VDP, and the voltage excessively written into the storage node is reduced in accordance with a level of a threshold voltage of the memory cell transistor, thereby reducing a variation in the voltage of the storage node due to a variation in the threshold voltage.
摘要翻译： 从外部输入写命令，位线的电压变为VDL和VSS，以及根据存储单元的阈值电压（LVT：低阈值电压，MVT：中间阈值电压，HVT：高阈值电压）的电压 晶体管经由存储单元晶体管写入电容器的存储节点。 此后，当连接到电容器的板侧的板线从电压VPL驱动到电压VPH并且存储节点的电压由于耦合而增加时，位线的电压VDL被降低到电压VDP，并且 根据存储单元晶体管的阈值电压的电平降低过度写入存储节点的电压，从而减小由于阈值电压的变化引起的存储节点的电压的变化。
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