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1.发明申请公开(公告)号：US20190091640A1
公开(公告)日：2019-03-28
申请号：US16114253
申请日：2018-08-28
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Hajime NISHIDE , Takashi IZUTA , Takatoshi HAYASHI , Katsuhiro FUKUI , Koichi OKAMOTO , Kazuhiro FUJITA , Atsuyasu MIURA , Kenji KOBAYASHI , Sei NEGORO , Hiroki TSUJIKAWA
Abstract: A chemical liquid preparation method of preparing a chemical liquid for treating a film formed on a substrate, including a gas dissolving process in which an oxygen-containing gas and an inert-gas-containing gas are dissolved in the chemical liquid by supplying the oxygen-containing gas which contains oxygen gas and the inert-gas-containing gas which contains an inert gas to a chemical liquid, wherein in the gas dissolving process, a dissolved oxygen concentration in the chemical liquid is adjusted by setting a mixing ratio between the oxygen-containing gas and the inert-gas-containing gas supplied to the chemical liquid as a mixing ratio corresponding to a predetermined target dissolved oxygen concentration.
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公开(公告)号：US20240342672A1
公开(公告)日：2024-10-17
申请号：US18755680
申请日：2024-06-27
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Hajime NISHIDE , Takashi IZUTA , Takatoshi HAYASHI , Katsuhiro FUKUI , Koichi OKAMOTO , Kazuhiro FUJITA , Atsuyasu MIURA , Kenji KOBAYASHI , Sei NEGORO , Hiroki TSUJIKAWA
IPC: B01F35/82 , B01F23/231 , B01F23/237 , B01F35/21 , B01F35/22 , G05D11/00 , G05D21/02 , H01L21/306 , H01L21/3213 , H01L21/67 , B01F101/58
CPC classification number: B01F35/82 , B01F23/231 , B01F23/237611 , B01F23/237612 , B01F23/23765 , B01F35/2132 , B01F35/2202 , G05D11/00 , G05D21/02 , H01L21/30608 , H01L21/32134 , H01L21/67017 , H01L21/67028 , H01L21/67051 , H01L21/67075 , H01L21/6708 , B01F2101/58
Abstract: A chemical liquid preparation method of preparing a TMAH-containing chemical liquid, including, a correspondence relationship preparing step of preparing a correspondence relationship between a supply flow rate ratio between an oxygen-containing gas and an inert-gas-containing gas and a convergent dissolved oxygen concentration in the TMAH-containing chemical liquid that is converged to when the oxygen-containing gas and the inert-gas-containing gas are supplied into the TMAH-containing chemical liquid; a concentration setting step of setting a target dissolved oxygen concentration in the TMAH-containing chemical liquid; a supply-flow-rate-ratio acquiring step of acquiring the supply flow rate ratio between the oxygen-containing gas and the inert-gas-containing gas corresponding to the target dissolved oxygen concentration in accordance with the correspondence relationship prepared in the correspondence relationship preparing step; and a gas supplying step of supplying the oxygen-containing gas and the inert-gas-containing gas with the supply flow rate ratio acquired in the supply-flow-rate-ratio acquiring step.
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公开(公告)号：US20220347641A1
公开(公告)日：2022-11-03
申请号：US17867693
申请日：2022-07-19
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Hajime NISHIDE , Takashi IZUTA , Takatoshi HAYASHI , Katsuhiro FUKUI , Koichi OKAMOTO , Kazuhiro FUJITA , Atsuyasu MIURA , Kenji KOBAYASHI , Sei NEGORO , Hiroki TSUJIKAWA
IPC: B01F35/82 , H01L21/67 , G05D21/02 , H01L21/306 , G05D11/00 , H01L21/3213 , B01F23/231 , B01F35/21 , B01F35/22
Abstract: A chemical liquid preparation method of preparing a chemical liquid for treating a film formed on a substrate, including a gas dissolving process in which an oxygen-containing gas and an inert-gas-containing gas are dissolved in the chemical liquid by supplying the oxygen-containing gas which contains oxygen gas and the inert-gas-containing gas which contains an inert gas to a chemical liquid, wherein in the gas dissolving process, a dissolved oxygen concentration in the chemical liquid is adjusted by setting a mixing ratio between the oxygen-containing gas and the inert-gas-containing gas supplied to the chemical liquid as a mixing ratio corresponding to a predetermined target dissolved oxygen concentration.
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