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公开(公告)号：US11495467B2
公开(公告)日：2022-11-08
申请号：US17115313
申请日：2020-12-08
Applicant: SEMES CO., LTD.
Inventor： Jung Suk Goh , Jae Seong Lee , Do Youn Lim , Kuk Saeng Kim , Young Dae Chung , Tae Shin Kim , Jee Young Lee , Won Geun Kim , Ji Hoon Jeong , Kwang Sup Kim , Pil Kyun Heo , Yoon Ki Sa , Ye Rim Yeon , Hyun Yoon , Do Yeon Kim , Yong Jun Seo , Byeong Geun Kim , Young Je Um
IPC: H01L21/26 , H01L21/311 , H01L21/67 , H01L21/66
Abstract: Method and apparatus for etching a thin layer including silicon nitride formed on a substrate are disclosed. Etchant including phosphoric acid and water is supplied on the substrate so that a liquid layer is formed on the substrate. The thin layer is etched by reaction between the thin layer and the etchant. Thickness of the liquid layer is measured to detect variation in the thickness of the liquid layer while etching the thin layer. Variation in the concentration of the phosphoric acid and the water is calculated based on the variation in the thickness of the liquid layer. Water is supplied on the substrate based on the variation in the concentration of the phosphoric acid and the water so that the concentration of the phosphoric acid and the water becomes a predetermined value.
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公开(公告)号：US12046466B2
公开(公告)日：2024-07-23
申请号：US17965911
申请日：2022-10-14
Applicant: SEMES CO., LTD.
Inventor： Yong-Jun Seo , Hyun Yoon , Jungsuk Goh , Byeong Geun Kim , Yoonki Sa , Doyeon Kim , Yerim Yeon , Choonghyun Lee , Pil Kyun Heo , Youngje Um , Jaeseong Lee , Dongok Ahn
CPC classification number: H01L21/02101 , H01L21/6715
Abstract: The inventive concept provides a method for treating a substrate. In an embodiment, the substrate treating method includes a treatment step of treating a residue on the substrate with a first fluid in a supercritical state and a second fluid in a supercritical state in a process space of a chamber, and the first fluid in the supercritical state and the second fluid in the supercritical state have different densities.
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