公开(公告)号：US11756815B2

公开(公告)日：2023-09-12

申请号：US17083189

申请日：2020-10-28

Applicant: SEMES CO., LTD.

Inventor： Yong Jun Seo ,  Sang Hyun Son ,  Sang Min Ha ,  Dong Ok Ahn

IPC: H01L21/67 ,  H01L23/00 ,  H01L21/324 ,  G01P15/02 ,  G01C19/00 ,  H01L23/498

CPC classification number: H01L21/67248 ,  G01C19/00 ,  G01P15/02 ,  H01L21/324 ,  H01L21/67103 ,  H01L23/4985 ,  H01L23/562

Abstract: Disclosed is an apparatus for precisely monitoring warpage deformation of a substrate. The apparatus includes a sensing unit and a processor. The sensing unit is removably mounted on the substrate and detects information on the warpage deformation of the substrate during a treatment process performed on the substrate. The processor generates warpage state information on the basis of the warpage information detected by the sensing unit.

公开(公告)号：US20230350438A1

公开(公告)日：2023-11-02

申请号：US17732553

申请日：2022-04-29

Applicant: SEMES Co., Ltd.

Inventor： Yong Jun Seo ,  Sang Hyun Son ,  Sang Min Ha ,  Hyeong Jun Cho ,  Dong Ok Ahn

IPC: H01L21/67 ,  G05D23/19 ,  G01K3/14

CPC classification number: G05D23/1927 ,  G01K3/14 ,  H01L21/67248 ,  H01L21/67103

Abstract: A process measurement apparatus and method capable of increasing production by decreasing an operating time are provided. The process measurement method is performed by a computing device, and includes receiving a plurality of sensed values from a plurality of sensors disposed in a wafer-type temperature sensor, generating a first temperature value of a first heating zone based on the plurality of sensed values, and determining a first compensation value based on a first difference value corresponding to a difference between the first temperature value and a target value, wherein a first compensation ratio between the first difference value and the first compensation value when the first difference value is a first value is different from a second compensation ratio between the first difference value and the first compensation value when the first difference value is a second value.

公开(公告)号：US11495467B2

公开(公告)日：2022-11-08

申请号：US17115313

申请日：2020-12-08

Applicant: SEMES CO., LTD.

Inventor： Jung Suk Goh ,  Jae Seong Lee ,  Do Youn Lim ,  Kuk Saeng Kim ,  Young Dae Chung ,  Tae Shin Kim ,  Jee Young Lee ,  Won Geun Kim ,  Ji Hoon Jeong ,  Kwang Sup Kim ,  Pil Kyun Heo ,  Yoon Ki Sa ,  Ye Rim Yeon ,  Hyun Yoon ,  Do Yeon Kim ,  Yong Jun Seo ,  Byeong Geun Kim ,  Young Je Um

IPC: H01L21/26 ,  H01L21/311 ,  H01L21/67 ,  H01L21/66

Abstract: Method and apparatus for etching a thin layer including silicon nitride formed on a substrate are disclosed. Etchant including phosphoric acid and water is supplied on the substrate so that a liquid layer is formed on the substrate. The thin layer is etched by reaction between the thin layer and the etchant. Thickness of the liquid layer is measured to detect variation in the thickness of the liquid layer while etching the thin layer. Variation in the concentration of the phosphoric acid and the water is calculated based on the variation in the thickness of the liquid layer. Water is supplied on the substrate based on the variation in the concentration of the phosphoric acid and the water so that the concentration of the phosphoric acid and the water becomes a predetermined value.