公开(公告)号：US11923213B2

公开(公告)日：2024-03-05

申请号：US17128159

申请日：2020-12-20

Applicant: SEMES CO., LTD.

Inventor： Tae Shin Kim ,  Young Dae Chung ,  Ji Hoon Jeong ,  Jee Young Lee ,  Won Geun Kim

IPC: H01L23/00 ,  B08B3/10 ,  B23K26/00 ,  B23K26/06 ,  B23K26/064 ,  B23K26/352 ,  G02B7/02 ,  G02B27/09 ,  H01L21/02 ,  H01L21/268 ,  H01L21/66 ,  H01L21/67 ,  H01L21/687 ,  B23K101/40 ,  B23K103/00

CPC classification number: H01L21/67115 ,  B08B3/10 ,  B23K26/0006 ,  B23K26/0604 ,  B23K26/0626 ,  B23K26/064 ,  B23K26/352 ,  G02B7/028 ,  G02B27/0916 ,  G02B27/0955 ,  H01L21/02057 ,  H01L21/268 ,  H01L21/67051 ,  H01L21/67248 ,  H01L21/68764 ,  H01L22/20 ,  B23K2101/40 ,  B23K2103/56

Abstract: Proposed is a substrate heating unit including: a laser generator providing a laser beam for heating a substrate; and a beam shaper processing the laser beam from the laser generator and selectively providing one of a first beam having a uniform energy distribution and a second beam having an edge-enhanced energy distribution to the substrate.

公开(公告)号：US12055857B2

公开(公告)日：2024-08-06

申请号：US18147469

申请日：2022-12-28

Applicant: SEMES CO., LTD.

Inventor： Tae Hee Kim ,  Ji Hoon Jeong ,  Tae Shin Kim ,  Young Dae Chung ,  Young Eun Jeon

IPC: G03F7/00

CPC classification number: G03F7/70191 ,  G03F7/70025

Abstract: The inventive concept provides a mask treatment apparatus. The mask treatment may include a support unit that supports the mask, and a light irradiation unit that irradiate the mask with a light to adjust a critical dimension of a pattern formed in the mask, wherein the light irradiation unit includes a light source that generates the light, and a light modulation element that modulates the light generated by the light source and forms an irradiation pattern.

公开(公告)号：US11772198B2

公开(公告)日：2023-10-03

申请号：US17115284

申请日：2020-12-08

Applicant: SEMES CO., LTD.

Inventor： Won Geun Kim ,  Tae Shin Kim

IPC: B23K26/362 ,  H01L21/263 ,  B23K101/40

CPC classification number: B23K26/362 ,  H01L21/2633 ,  B23K2101/40

Abstract: A thin layer etching apparatus includes an etchant supply unit configured to supply an etchant onto a substrate to etch a thin layer formed on the substrate, a temperature measuring unit configured to measure a temperature of the substrate while an etching process is performed by the etchant, a laser irradiating unit configured to irradiate a first laser beam on a first portion including a central portion of the substrate and to irradiate a second laser beam in a ring shape on a second portion surrounding the first portion so that the temperature of the substrate is maintained at a predetermined temperature during the etching process, and a process control unit configured to control power of the first and second laser beams based on the temperature of the substrate measured by the temperature measuring unit to reduce a temperature difference between the first and second portions of the substrate.

公开(公告)号：US11715651B2

公开(公告)日：2023-08-01

申请号：US17079445

申请日：2020-10-24

Applicant: SEMES CO., LTD.

Inventor： Young Dae Chung ,  Won Geun Kim ,  Jee Young Lee ,  Ji Hoon Jeong ,  Tae Shin Kim ,  Jung Suk Goh ,  Cheng Bin Cui ,  Ye Rim Yeon

IPC: H01L21/67

CPC classification number: H01L21/6708 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/67253

Abstract: A substrate treatment apparatus includes a substrate support unit, a chemical supply unit supplying a chemical solution onto an upper surface of a substrate supported on the substrate support unit, a laser irradiation unit applying a laser pulse to the substrate to heat the substrate, and a controller controlling the laser irradiation unit to emit the laser pulse such that the substrate is repeatedly heated and cooled to maintain a preset temperature.

公开(公告)号：US12224200B2

公开(公告)日：2025-02-11

申请号：US17394868

申请日：2021-08-05

Applicant: SEMES CO., LTD.

Inventor： Ji Hoon Jeong ,  Won-Geun Kim ,  Young Dae Chung ,  Jee Young Lee ,  Tae Shin Kim

IPC: H01L21/687 ,  H01L21/67

Abstract: The present disclosure provides a substrate treating apparatus. The substrate treating apparatus includes a support unit that supports a substrate, and a heating unit that irradiates a beam to the substrate and heat the substrate, and the heating unit further includes an irradiation part that irradiates the beam, and a rotation part that rotates the beam.

公开(公告)号：US12094733B2

公开(公告)日：2024-09-17

申请号：US17073342

申请日：2020-10-17

Applicant: SEMES CO., LTD.

Inventor： Young Dae Chung ,  Won Geun Kim ,  Jee Young Lee ,  Ji Hoon Jeong ,  Tae Shin Kim ,  Se Hoon Oh ,  Pil Kyun Heo ,  Hyun Goo Park

IPC: H01L21/67 ,  H01L21/306 ,  C09K13/04

CPC classification number: H01L21/6708 ,  H01L21/30604 ,  H01L21/67115 ,  C09K13/04

Abstract: Disclosed is a substrate treatment apparatus including a rotation unit that supports and rotates a substrate, a chemical discharge unit that discharges a chemical solution to the rotation unit, a chemical recovery unit disposed close to the rotation unit and configured to recover the chemical solution scattering from the rotation unit, and a laser irradiation unit that applies a laser beam to the substrate and heats the substrate.

公开(公告)号：US11495467B2

公开(公告)日：2022-11-08

申请号：US17115313

申请日：2020-12-08

Applicant: SEMES CO., LTD.

Inventor： Jung Suk Goh ,  Jae Seong Lee ,  Do Youn Lim ,  Kuk Saeng Kim ,  Young Dae Chung ,  Tae Shin Kim ,  Jee Young Lee ,  Won Geun Kim ,  Ji Hoon Jeong ,  Kwang Sup Kim ,  Pil Kyun Heo ,  Yoon Ki Sa ,  Ye Rim Yeon ,  Hyun Yoon ,  Do Yeon Kim ,  Yong Jun Seo ,  Byeong Geun Kim ,  Young Je Um

IPC: H01L21/26 ,  H01L21/311 ,  H01L21/67 ,  H01L21/66

Abstract: Method and apparatus for etching a thin layer including silicon nitride formed on a substrate are disclosed. Etchant including phosphoric acid and water is supplied on the substrate so that a liquid layer is formed on the substrate. The thin layer is etched by reaction between the thin layer and the etchant. Thickness of the liquid layer is measured to detect variation in the thickness of the liquid layer while etching the thin layer. Variation in the concentration of the phosphoric acid and the water is calculated based on the variation in the thickness of the liquid layer. Water is supplied on the substrate based on the variation in the concentration of the phosphoric acid and the water so that the concentration of the phosphoric acid and the water becomes a predetermined value.