公开(公告)号：US12300519B2

公开(公告)日：2025-05-13

申请号：US18215128

申请日：2023-06-27

Applicant: SEMES CO., LTD.

Inventor： Jung Suk Goh ,  Sun Mi Kim ,  Ji Su Hong ,  Kuk Saeng Kim ,  Cheng Bin Cui ,  Pil Kyun Heo

IPC: H01L21/67 ,  B08B3/04

Abstract: Disclosed is a substrate treatment apparatus. The apparatus includes a support unit that supports and rotates a substrate and a spray unit equipped with one or more nozzles to spray a dual fluid that is a mixture of a cleaning agent and carbon dioxide onto the substrate.

公开(公告)号：US11887883B2

公开(公告)日：2024-01-30

申请号：US17341696

申请日：2021-06-08

Applicant: SEMES CO., LTD.

Inventor： Do Yeon Kim ,  Pil Kyun Heo ,  Ho Jong Hwang ,  Hyun Yoon ,  Jong Min Lee ,  Chul Gyun Baik

IPC: B32B3/00 ,  H01L21/687 ,  B29C45/00 ,  B29C45/16 ,  B29K507/04 ,  B29K27/18

CPC classification number: H01L21/68757 ,  B29C45/0001 ,  B29C45/0055 ,  B29C45/16 ,  H01L21/68721 ,  B29K2027/18 ,  B29K2507/04

Abstract: A heterogeneous composite material and a method for manufacturing the heterogeneous composite material are provided. The heterogeneous composite material includes a first compression structure formed by compressing a first material, and a second compression structure formed by compressing a second material different from the first material, and disposed in close contact with the first compression structure, wherein at least a portion of the first compression structure and at least a portion of the second compression structure are disposed on both sides of a boundary surface existing in a circular shape with a predetermined radius with respect to a central axis in a state in contact with each other at the boundary surface.

公开(公告)号：US12046466B2

公开(公告)日：2024-07-23

申请号：US17965911

申请日：2022-10-14

Applicant: SEMES CO., LTD.

Inventor： Yong-Jun Seo ,  Hyun Yoon ,  Jungsuk Goh ,  Byeong Geun Kim ,  Yoonki Sa ,  Doyeon Kim ,  Yerim Yeon ,  Choonghyun Lee ,  Pil Kyun Heo ,  Youngje Um ,  Jaeseong Lee ,  Dongok Ahn

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02101 ,  H01L21/6715

Abstract: The inventive concept provides a method for treating a substrate. In an embodiment, the substrate treating method includes a treatment step of treating a residue on the substrate with a first fluid in a supercritical state and a second fluid in a supercritical state in a process space of a chamber, and the first fluid in the supercritical state and the second fluid in the supercritical state have different densities.

公开(公告)号：US11682577B2

公开(公告)日：2023-06-20

申请号：US16733688

申请日：2020-01-03

Applicant: SEMES CO., LTD.

Inventor： Jihwan Lee ,  Jungbong Choi ,  Chan Young Heo ,  Pil Kyun Heo

IPC: H01L21/687 ,  H01L21/67 ,  B08B3/04

CPC classification number: H01L21/6875 ,  B08B3/04 ,  H01L21/6704 ,  H01L21/67051 ,  H01L21/68728 ,  H01L21/68757

Abstract: The present disclosure relates to a spin head, apparatus and method for treating a substrate including the spin head. The spin head includes a supporting plate where a substrate is placed and a chuck pin placed on the supporting plate and supporting a lateral portion of the substrate, wherein the chuck pin includes an outer body and an inner body inserted in the outer body and provided with a different material from the outer body, wherein each outer body and the inner body is provided with any one of a first material or a second material, and wherein one material of the first material and the second material is provided with a material having lower heat conductivity and better thermal resistance than another one.

公开(公告)号：US11940734B2

公开(公告)日：2024-03-26

申请号：US17726343

申请日：2022-04-21

Applicant: SEMES CO., LTD.

Inventor： Ki Hoon Choi ,  Eung Su Kim ,  Pil Kyun Heo ,  Jin Yeong Sung ,  Hae-Won Choi ,  Anton Koriakin ,  Joon Ho Won

IPC: G03F7/30 ,  F26B5/00

CPC classification number: G03F7/30 ,  F26B5/005

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a supply line having a first open/close valve installed thereon and configured to supply a treating fluid to the treating space; a heater installed on the supply line and configured to heat the treating fluid; an exhaust line having a second open/close valve installed thereon and configured to exhaust the treating space; and, a controller configured to control the first open/close value and the second open/close valve such that the treating fluid heated is supplied to and exhausted from the treating space before a treating process is performed on a substrate in the treating space.

公开(公告)号：US20230341779A1

公开(公告)日：2023-10-26

申请号：US17726343

申请日：2022-04-21

Applicant: SEMES CO., LTD.

Inventor： Ki Hoon Choi ,  Eung Su Kim ,  Pil Kyun Heo ,  Jin Yeong Sung ,  Hae-Won Choi ,  Anton Koriakin ,  Joon Ho Won

IPC: G03F7/30 ,  F26B5/00

CPC classification number: G03F7/30 ,  F26B5/005

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a supply line having a first open/close valve installed thereon and configured to supply a treating fluid to the treating space; a heater installed on the supply line and configured to heat the treating fluid; an exhaust line having a second open/close valve installed thereon and configured to exhaust the treating space; and, a controller configured to control the first open/close value and the second open/close valve such that the treating fluid heated is supplied to and exhausted from the treating space before a treating process is performed on a substrate in the treating space.

公开(公告)号：US12094733B2

公开(公告)日：2024-09-17

申请号：US17073342

申请日：2020-10-17

Applicant: SEMES CO., LTD.

Inventor： Young Dae Chung ,  Won Geun Kim ,  Jee Young Lee ,  Ji Hoon Jeong ,  Tae Shin Kim ,  Se Hoon Oh ,  Pil Kyun Heo ,  Hyun Goo Park

IPC: H01L21/67 ,  H01L21/306 ,  C09K13/04

CPC classification number: H01L21/6708 ,  H01L21/30604 ,  H01L21/67115 ,  C09K13/04

Abstract: Disclosed is a substrate treatment apparatus including a rotation unit that supports and rotates a substrate, a chemical discharge unit that discharges a chemical solution to the rotation unit, a chemical recovery unit disposed close to the rotation unit and configured to recover the chemical solution scattering from the rotation unit, and a laser irradiation unit that applies a laser beam to the substrate and heats the substrate.

公开(公告)号：US11804371B2

公开(公告)日：2023-10-31

申请号：US16920418

申请日：2020-07-02

Applicant: SEMES CO., LTD.

Inventor： Do Yeon Kim ,  Se Hoon Oh ,  Won Geun Kim ,  Ju Mi Lee ,  Ho Jong Hwang ,  Pil Kyun Heo ,  Hyun Yoon ,  Choong Hyun Lee ,  Hyun Goo Park

IPC: H01L21/02 ,  H01L21/67 ,  B05C11/08 ,  G03F7/16

CPC classification number: H01L21/02057 ,  H01L21/6715 ,  B05C11/08 ,  G03F7/162 ,  H01L21/02282 ,  H01L21/67051

Abstract: Provided is a substrate treatment apparatus including a treatment container equipped with a conductive member. The conductive member is made of a material having a lower resistivity than that of the treatment container. The conductive member prevents a rise of an electric potential of the treatment container, which is caused by charging during treatment of a substrate, thereby preventing the substrate from being contaminated and damaged by particles and electrostatic arcing.

公开(公告)号：US11764084B2

公开(公告)日：2023-09-19

申请号：US16951718

申请日：2020-11-18

Applicant: SEMES CO., LTD.

Inventor： Jung Suk Goh ,  Sun Mi Kim ,  Ji Su Hong ,  Kuk Saeng Kim ,  Cheng Bin Cui ,  Pil Kyun Heo

IPC: H01L21/67 ,  B08B3/04

CPC classification number: H01L21/6708 ,  B08B3/041 ,  H01L21/67253

Abstract: Disclosed is a substrate treatment apparatus. The apparatus includes a support unit that supports and rotates a substrate and a spray unit equipped with one or more nozzles to spray a dual fluid that is a mixture of a cleaning agent and carbon dioxide onto the substrate.

公开(公告)号：US11495467B2

公开(公告)日：2022-11-08

申请号：US17115313

申请日：2020-12-08

Applicant: SEMES CO., LTD.

Inventor： Jung Suk Goh ,  Jae Seong Lee ,  Do Youn Lim ,  Kuk Saeng Kim ,  Young Dae Chung ,  Tae Shin Kim ,  Jee Young Lee ,  Won Geun Kim ,  Ji Hoon Jeong ,  Kwang Sup Kim ,  Pil Kyun Heo ,  Yoon Ki Sa ,  Ye Rim Yeon ,  Hyun Yoon ,  Do Yeon Kim ,  Yong Jun Seo ,  Byeong Geun Kim ,  Young Je Um

IPC: H01L21/26 ,  H01L21/311 ,  H01L21/67 ,  H01L21/66

Abstract: Method and apparatus for etching a thin layer including silicon nitride formed on a substrate are disclosed. Etchant including phosphoric acid and water is supplied on the substrate so that a liquid layer is formed on the substrate. The thin layer is etched by reaction between the thin layer and the etchant. Thickness of the liquid layer is measured to detect variation in the thickness of the liquid layer while etching the thin layer. Variation in the concentration of the phosphoric acid and the water is calculated based on the variation in the thickness of the liquid layer. Water is supplied on the substrate based on the variation in the concentration of the phosphoric acid and the water so that the concentration of the phosphoric acid and the water becomes a predetermined value.