APPARATUS AND METHOD FOR TREATING SUBSTRATE

    公开(公告)号:US20210066077A1

    公开(公告)日:2021-03-04

    申请号:US17004079

    申请日:2020-08-27

    Abstract: The inventive concept relates to a method for treating a substrate. In an embodiment, a method for etching a substrate having a silicon nitride layer includes etching the silicon nitride layer by dispensing a first treatment liquid having a set temperature and a set concentration onto the substrate heated to a set temperature, in which a second treatment liquid is additionally dispensed for a set period of time in an overlapping manner while the first treatment liquid is dispensed in the silicon nitride layer etching process.

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