公开(公告)号：US20180337070A1

公开(公告)日：2018-11-22

申请号：US15979956

申请日：2018-05-15

Applicant: SEMES CO., LTD.

Inventor： Byungsun Bang ,  Buyoung Jung ,  Jungbong Choi ,  Bong Joo Kim ,  Youngil Lee ,  Gil Hun Song ,  Gui Su Park ,  Kwang Ryul Kim ,  Kwang-Seop Lee ,  Jin Tack Yu

IPC: H01L21/67 ,  H01L21/02 ,  B08B7/00 ,  B08B3/04 ,  B08B3/08 ,  B08B7/04 ,  C03C23/00 ,  B23K26/402

CPC classification number: H01L21/67028 ,  B08B3/041 ,  B08B3/08 ,  B08B7/0042 ,  B08B7/04 ,  B23K26/402 ,  C03C23/0025 ,  H01L21/0206 ,  H01L21/0217

Abstract: Disclosed are a substrate treating apparatus and a substrate treating method. The substrate treating method includes removing a portion of the thin film by irradiating a laser to the substrate, and after the removing of the portion of the thin film, removing the remaining portion of the thin film by supplying a chemical to the substrate.

公开(公告)号：US20130284367A1

公开(公告)日：2013-10-31

申请号：US13873304

申请日：2013-04-30

Applicant: SEMES CO., LTD.

Inventor： Byung Chul Kang ,  Bong Joo Kim ,  Byung Man Kang ,  Young Ho Choo

IPC: B05C11/10 ,  B05D1/00

CPC classification number: B05C11/1042 ,  B05D1/00 ,  H01L21/67017 ,  H01L21/6715 ,  Y10T137/0329

Abstract: Provided is a substrate processing apparatus. The apparatus includes a processing chamber containing a substrate and processing the substrate by using a processing solution and a supplying unit supplying the processing solution to the processing chamber. The supplying unit includes a supply line through which the processing solution is supplied, a preliminary heater installed on the supply line and preliminary heating the processing solution, a main heater installed on the supply line at a lower stream of the preliminary heater and secondarily heating the processing solution, a first detour line connected to the supply line to detour to the preliminary heater and comprising a first valve, a second detour line connected to the supply line to detour the preliminary heater and the main heater or the main heater and comprising a second valve, and a controller controlling the first valve and the second valve.

Abstract translation: 提供了一种基板处理装置。 所述装置包括处理室，所述处理室包含基板并通过使用处理溶液和将所述处理溶液供应到所述处理室的供应单元来处理所述基板。 供给单元包括供给管线，通过该供给管路供给处理液，将预热加热器安装在供给管路上，对该处理液进行预加热，将主加热器安装在预热器的下游的供给管路上， 连接到所述供应管线以绕行到所述预加热器的第一绕线，包括第一阀，连接到所述供应管线的第二绕行线，以绕过所述预加热器和所述主加热器或所述主加热器并且包括第二阀 阀，以及控制第一阀和第二阀的控制器。