公开(公告)号：US20180102238A1

公开(公告)日：2018-04-12

申请号：US15702119

申请日：2017-09-12

Applicant: SEMES CO., LTD.

Inventor： Jamyung GU ,  Jong Hwan AN ,  Shin-Woo NAM ,  Sooryun RO

IPC: H01J37/32 ,  H02N13/00 ,  H03H7/38 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32642 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/32522 ,  H01J37/32715 ,  H01J2237/0203 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6831 ,  H02N13/00 ,  H03H7/38

Abstract: A substrate treating apparatus includes a chamber having a treatment space in the interior thereof, a support unit that supports a substrate in the treatment space, a gas supply unit configured to supply a treatment gas into the treatment space, and a plasma source configured to generate plasma from the treatment gas. The support unit includes an electrostatic chuck, on which the substrate is positioned, a first ring surrounding a circumference of the substrate positioned on the electrostatic chuck, a second ring surrounding a circumference of the electrostatic chuck and formed of an insulation material, an insertion body disposed in the second ring and formed of a conductive material, and an impedance control unit configured to adjust an impedance of the insertion body.

公开(公告)号：US20240392192A1

公开(公告)日：2024-11-28

申请号：US18670724

申请日：2024-05-21

Applicant: SEMES CO., LTD.

Inventor： Kyungseok MIN ,  Jinyoung KIM ,  Youngmoon KIM ,  Sooryun RO ,  Jisoo OH ,  Kwangbae KIM ,  Chulhee LEE

IPC: C09K13/00 ,  H01L21/02 ,  H01L21/311

Abstract: An etching gas composition includes an organic fluorine compound and tungsten fluoride.

公开(公告)号：US20240392191A1

公开(公告)日：2024-11-28

申请号：US18670706

申请日：2024-05-21

Applicant: SEMES CO., LTD.

Inventor： Kyungseok MIN ,  Youngmoon KIM ,  Sooryun RO ,  Jisoo OH ,  Kwangbae KIM ,  Chulhee LEE

IPC: C09K13/00 ,  H01L21/02 ,  H01L21/311

Abstract: An etching gas composition includes an organic fluorine compound and carbon disulfide.