公开(公告)号：US20170213853A1

公开(公告)日：2017-07-27

申请号：US15480934

申请日：2017-04-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masaya Kadono ,  Shunpei YAMAZAKI ,  Yukio YAMAUCHI ,  Hidehito KITAKADO

IPC: H01L27/12

CPC classification number: H01L27/1222 ,  H01L23/10 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/127 ,  H01L27/1274 ,  H01L27/1288 ,  H01L27/3258 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L51/5253 ,  H01L51/5259 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.

公开(公告)号：US20170052398A1

公开(公告)日：2017-02-23

申请号：US15248469

申请日：2016-08-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Jun KOYAMA ,  Yukio TANAKA ,  Hidehito KITAKADO ,  Hideto OHNUMA

IPC: G02F1/1368 ,  H01L27/32 ,  G02F1/1362 ,  G02F1/1345 ,  G02F1/1333 ,  H01L27/12 ,  H01L29/786

CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2201/123 ,  G02F2202/104 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/458 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78675 ,  H01L2029/7863 ,  H01L2227/323

Abstract: This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.

Abstract translation: 本发明提供一种具有高操作性能和高可靠性的半导体器件。 在形成驱动电路的n沟道TFT 802中配置与栅极配线重叠的LDD区域707，能够实现高耐热载流子注入的TFT结构。 不与栅极布线重叠的LDD区域717,718,719和720被布置在形成像素单元的n沟道TFT 804中。 结果，实现了具有小的截止电流值的TFT结构。 在这种情况下，属于周期表第15族的元素在LDD区707中比在LDD区717,718,719和720中的浓度更高。

公开(公告)号：US20150177545A1

公开(公告)日：2015-06-25

申请号：US14640045

申请日：2015-03-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Jun KOYAMA ,  Yukio TANAKA ,  Hidehito KITAKADO

IPC: G02F1/1368 ,  G02F1/1362 ,  H01L27/12

CPC classification number: H01L27/1255 ,  G02F1/13454 ,  G02F1/136209 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L29/78651 ,  H01L29/78675

Abstract: In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film.

Abstract translation: 在有源矩阵型液晶显示装置中，其中诸如移位寄存器电路和缓冲电路的功能电路并入同一衬底上，提供了最佳的TFT结构，同时增加了像素矩阵电路的孔径比。 存在这样的结构，其中在缓冲电路等中形成具有与栅电极重叠的第三杂质区的n沟道TFT，以及n沟道TFT，其中不重叠的第四杂质区 栅电极形成在像素矩阵电路中。 形成在像素矩阵电路中的保持电容器由遮光膜，形成在遮光膜上的电介质膜和像素电极形成。 Al特别用于遮光膜，并且使用Al氧化物膜形成电介质膜的阳极氧化工艺。

公开(公告)号：US20150014691A1

公开(公告)日：2015-01-15

申请号：US14499313

申请日：2014-09-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Jun KOYAMA ,  Yukio TANAKA ,  Hidehito KITAKADO

IPC: H01L27/12 ,  G02F1/1362 ,  H01L29/786

CPC classification number: H01L27/1255 ,  G02F1/13454 ,  G02F1/136209 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L29/78651 ,  H01L29/78675

Abstract: In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film.

Abstract translation: 在有源矩阵型液晶显示装置中，其中诸如移位寄存器电路和缓冲电路的功能电路并入同一衬底上，提供了最佳的TFT结构，同时增加了像素矩阵电路的孔径比。 存在这样的结构，其中在缓冲电路等中形成具有与栅电极重叠的第三杂质区的n沟道TFT，以及n沟道TFT，其中不重叠的第四杂质区 栅电极形成在像素矩阵电路中。 形成在像素矩阵电路中的保持电容器由遮光膜，形成在遮光膜上的电介质膜和像素电极形成。 Al特别用于遮光膜，并且使用Al氧化物膜形成电介质膜的阳极氧化工艺。

公开(公告)号：US20140160385A1

公开(公告)日：2014-06-12

申请号：US14070976

申请日：2013-11-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Jun KOYAMA ,  Yukio TANAKA ,  Hidehito KITAKADO ,  Hideto OHNUMA

IPC: H01L27/12 ,  G02F1/1362

CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2201/123 ,  G02F2202/104 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/458 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78675 ,  H01L2029/7863 ,  H01L2227/323

Abstract: This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.

Abstract translation: 本发明提供一种具有高操作性能和高可靠性的半导体器件。 在形成驱动电路的n沟道TFT 802中配置与栅极配线重叠的LDD区域707，能够实现高耐热载流子注入的TFT结构。 不与栅极布线重叠的LDD区域717,718,719和720被布置在形成像素单元的n沟道TFT 804中。 结果，实现了具有小的截止电流值的TFT结构。 在这种情况下，属于周期表第15族的元素在LDD区707中比在LDD区717,718,719和720中的浓度更高。