公开(公告)号：US20210210794A1

公开(公告)日：2021-07-08

申请号：US17116678

申请日：2020-12-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masaki YAMAKAJI ,  Junpei MOMO ,  Ryota TAJIMA ,  Takahiro KASAHARA

IPC: H01M10/42 ,  H01M10/48 ,  H01M50/116 ,  H01M50/124

Abstract: To provide a lithium-ion storage battery or electronic device that is flexible and highly safe. One embodiment of the present invention is a flexible storage battery including a positive electrode, a negative electrode, a separator between the positive electrode and the negative electrode, an exterior body that surrounds the positive electrode, the negative electrode, and the separator, and a wiring provided along the exterior body. At least part of the wiring is more easily breakable by deformation than the exterior body. The wiring is more vulnerable to deformation than the exterior body and thus damaged earlier than the exterior body. Damage to the wiring is detected and an alert is sent to a user; thus, the use of the storage battery can be stopped before the exterior body is damaged.

公开(公告)号：US20160156071A1

公开(公告)日：2016-06-02

申请号：US14943070

申请日：2015-11-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masaki YAMAKAJI ,  Junpei MOMO ,  Ryota TAJIMA ,  Takahiro KASAHARA

IPC: H01M10/42 ,  H01M2/02 ,  H01M10/0525 ,  H01M10/48

CPC classification number: H01M10/425 ,  H01M2/0275 ,  H01M2/0287 ,  H01M10/0525 ,  H01M10/48 ,  H01M10/488 ,  H01M2220/30 ,  Y02E60/122

Abstract: To provide a lithium-ion storage battery or electronic device that is flexible and highly safe. One embodiment of the present invention is a flexible storage battery including a positive electrode, a negative electrode, a separator between the positive electrode and the negative electrode, an exterior body that surrounds the positive electrode, the negative electrode, and the separator, and a wiring provided along the exterior body. At least part of the wiring is more easily breakable by deformation than the exterior body. The wiring is more vulnerable to deformation than the exterior body and thus damaged earlier than the exterior body. Damage to the wiring is detected and an alert is sent to a user; thus, the use of the storage battery can be stopped before the exterior body is damaged.

Abstract translation: 提供灵活高度安全的锂离子蓄电池或电子设备。 本发明的一个实施例是一种柔性蓄电池，其包括正极，负极，正极和负极之间的隔板，围绕正极，负极和隔板的外部主体，以及 沿着外部主体设置的接线。 布线的至少一部分通过变形比外部体更容易破裂。 布线比外部主体更容易变形，因此比外部体更早地损坏。 检测到接线损坏，向用户发送警报; 因此，可以在外部体损坏之前停止使用蓄电池。

公开(公告)号：US20130175525A1

公开(公告)日：2013-07-11

申请号：US13780138

申请日：2013-02-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI ,  Tomoya FUTAMURA ,  Takahiro KASAHARA

IPC: H01L33/00

CPC classification number: G02F1/136204 ,  H01L27/0248 ,  H01L27/1225 ,  H01L27/124 ,  H01L33/0041 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.

公开(公告)号：US20230059502A1

公开(公告)日：2023-02-23

申请号：US17976450

申请日：2022-10-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takahiro KASAHARA

IPC: H01L27/12 ,  H01L21/28 ,  H01L29/66 ,  H01L29/786

Abstract: The number of masks and photolithography processes used in a manufacturing process of a semiconductor device are reduced. A first conductive film is formed over a substrate; a first insulating film is formed over the first conductive film; a semiconductor film is formed over the first insulating film; a semiconductor film including a channel region is formed by etching part of the semiconductor film; a second insulating film is formed over the semiconductor film; a mask is formed over the second insulating film; a first portion of the second insulating film that overlaps the semiconductor film and second portions of the first insulating film and the second insulating film that do not overlap the semiconductor film are removed with the use of the mask; the mask is removed; and a second conductive film electrically connected to the semiconductor film is formed over at least part of the second insulating film.

公开(公告)号：US20190363112A1

公开(公告)日：2019-11-28

申请号：US16537091

申请日：2019-08-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takahiro KASAHARA

IPC: H01L27/12 ,  H01L29/66 ,  H01L21/28 ,  H01L29/786

Abstract: The number of masks and photolithography processes used in a manufacturing process of a semiconductor device are reduced. A first conductive film is formed over a substrate; a first insulating film is formed over the first conductive film; a semiconductor film is formed over the first insulating film; a semiconductor film including a channel region is formed by etching part of the semiconductor film; a second insulating film is formed over the semiconductor film; a mask is formed over the second insulating film; a first portion of the second insulating film that overlaps the semiconductor film and second portions of the first insulating film and the second insulating film that do not overlap the semiconductor film are removed with the use of the mask; the mask is removed; and a second conductive film electrically connected to the semiconductor film is formed over at least part of the second insulating film.

公开(公告)号：US20150362806A1

公开(公告)日：2015-12-17

申请号：US14837599

申请日：2015-08-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI ,  Tomoya FUTAMURA ,  Takahiro KASAHARA

IPC: G02F1/1362 ,  H01L27/12

CPC classification number: G02F1/136204 ,  H01L27/0248 ,  H01L27/1225 ,  H01L27/124 ,  H01L33/0041 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.

Abstract translation: 为了利用包括氧化物半导体的显示装置的特性，需要具有适当结构和占用面积小的保护电路等。 保护电路使用非线性元件形成，该非线性元件包括覆盖栅电极的栅极绝缘膜; 栅绝缘膜上的第一氧化物半导体层; 覆盖与第一氧化物半导体层的沟道形成区重叠的区域的沟道保护层; 以及通过层叠导电层和第二氧化物半导体层并在第一氧化物半导体层上形成的第一布线层和第二布线层。 栅电极连接到扫描线或信号线，第一布线层或第二布线层直接连接到栅电极。

公开(公告)号：US20140175449A1

公开(公告)日：2014-06-26

申请号：US14188859

申请日：2014-02-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro KASAHARA

IPC: H01L27/12

CPC classification number: G02F1/134336 ,  G02F1/134309 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/134345 ,  G02F2201/52 ,  G09G3/3607 ,  G09G3/3611 ,  G09G3/3614 ,  G09G3/3659 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1266 ,  H01L27/3213 ,  H01L27/3218 ,  H01L27/326 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78654 ,  H01L51/5284

Abstract: A new TFT arrangement is demonstrated, which enables prevention of TFT to be formed over a joint portion between the adjacent SOI layers prepared by the process including the separation of a thin single crystal semiconductor layer from a semiconductor wafer. The TFT arrangement is characterized by the structure where a plurality of TFTs each belonging to different pixels is gathered and arranged close to an intersection portion of a scanning line and a signal line. This structure allows the distance between regions, which are provided with the plurality of TFTs, to be extremely large compared with the distance between adjacent TFTs in the conventional TFT arrangement in which all TFTs are arranged in at a regular interval. The formation of a TFT over the joint portion can be avoided by the present arrangement, which leads to the formation of a display device with a negligible amount of display defects.

Abstract translation: 证明了一种新的TFT装置，其能够防止在通过包括从半导体晶片分离薄单晶半导体层的工艺制备的相邻SOI层之间的接合部分上形成TFT。 TFT装置的特征在于其中属于不同像素的多个TFT聚集并布置在扫描线和信号线的交叉部分附近的结构。 这种结构允许设置有多个TFT的区域之间的距离与其中所有TFT以规则间隔布置的常规TFT布置中的相邻TFT之间的距离相比非常大。 通过这种布置可以避免在接合部分上形成TFT，这导致形成具有可忽略的显示缺陷量的显示装置。

公开(公告)号：US20240347553A1

公开(公告)日：2024-10-17

申请号：US18756094

申请日：2024-06-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takahiro KASAHARA

IPC: H01L27/12 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/28 ,  H01L29/66 ,  H01L29/786 ,  H10K59/12 ,  H10K59/121

CPC classification number: H01L27/1288 ,  H01L21/28008 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/66969 ,  H01L29/7869 ,  G02F1/136236 ,  G02F1/1368 ,  H10K59/1201 ,  H10K59/1213

Abstract: The number of masks and photolithography processes used in a manufacturing process of a semiconductor device are reduced. A first conductive film is formed over a substrate; a first insulating film is formed over the first conductive film; a semiconductor film is formed over the first insulating film; a semiconductor film including a channel region is formed by etching part of the semiconductor film; a second insulating film is formed over the semiconductor film; a mask is formed over the second insulating film; a first portion of the second insulating film that overlaps the semiconductor film and second portions of the first insulating film and the second insulating film that do not overlap the semiconductor film are removed with the use of the mask; the mask is removed; and a second conductive film electrically connected to the semiconductor film is formed over at least part of the second insulating film.

公开(公告)号：US20230290789A1

公开(公告)日：2023-09-14

申请号：US18133086

申请日：2023-04-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI ,  Tomoya FUTAMURA ,  Takahiro KASAHARA

IPC: H01L27/12 ,  G02F1/1362 ,  H01L27/02 ,  H01L29/786 ,  H10K59/131 ,  H10K59/121

CPC classification number: H01L27/1225 ,  G02F1/136204 ,  G02F1/136286 ,  H01L27/124 ,  H01L27/0266 ,  H01L29/7869 ,  H10K59/131 ,  H10K59/1213

Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

公开(公告)号：US20210327916A1

公开(公告)日：2021-10-21

申请号：US17365174

申请日：2021-07-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI ,  Tomoya FUTAMURA ,  Takahiro KASAHARA

IPC: H01L27/12 ,  G02F1/1362 ,  H01L27/02 ,  H01L29/786 ,  H01L27/32

Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.