公开(公告)号：US08952340B2

公开(公告)日：2015-02-10

申请号：US14313128

申请日：2014-06-24

Applicant: SEN Corporation

Inventor： Mitsuaki Kabasawa ,  Tatsuo Nishihara ,  Kazuhiro Watanabe ,  Yuuji Takahashi ,  Tatsuya Yamada

IPC: G21K1/08 ,  H01J3/14 ,  H01J3/26 ,  H01J49/42

CPC classification number: H01J37/05 ,  H01J37/3171 ,  H01J2237/0473 ,  H01J2237/057 ,  H01J2237/14 ,  H01J2237/15 ,  H01J2237/30472

Abstract: A high-frequency acceleration type ion acceleration and transportation apparatus is a beamline after an ion beam is accelerated by a high-frequency acceleration system having an energy spread with respect to set beam energy and includes an energy analysis deflection electromagnet and a horizontal beam focusing element. In the ion acceleration and transportation apparatus, a double slit that is configured by an energy spread confining slit and an energy analysis slit is additionally disposed at a position at which energy dispersion and a beam size are to be appropriate. The position is determined based on a condition of the energy analysis deflection electromagnet and the horizontal beam focusing element, and the double slit performs energy separation and energy definition and decreases the energy spread of the ion beam by performing adjustment for a smaller energy spread while suppressing a decrease in the amount of a beam current.

Abstract translation: 高频加速型离子加速和输送装置是通过具有相对于设定束能量的能量扩散的高频加速系统加速离子束之后的束线，并且包括能量分析偏转电磁体和水平束聚焦元件 。 在离子加速输送装置中，在能量分散和光束尺寸适当的位置处，另外设置由能量扩散限制狭缝和能量分析狭缝构成的双狭缝。 基于能量分析偏转电磁体和水平光束聚焦元件的条件确定位置，并且双缝执行能量分离和能量定义，并且通过在抑制时能够进行更小的能量扩展的调整来减小离子束的能量扩展 光束电流量的减少。

公开(公告)号：US08759801B2

公开(公告)日：2014-06-24

申请号：US13653211

申请日：2012-10-16

Applicant: SEN Corporation

Inventor： Shiro Ninomiya ,  Mitsukuni Tsukihara ,  Tetsuya Kudo ,  Tatsuya Yamada

IPC: G21K5/04 ,  H01J37/26 ,  H01J37/317

CPC classification number: H01J37/26 ,  H01J37/3023 ,  H01J37/304 ,  H01J37/317 ,  H01J37/3171 ,  H01J2237/18 ,  H01J2237/30472 ,  H01J2237/31701 ,  H01J2237/31703

Abstract: During ion implantation into a wafer, an ion beam current is measured, a change in vacuum conductance which changes in accordance with a change of the location of a structure operating in a vacuum beam line chamber or a vacuum treatment chamber is obtained, furthermore, changes in degree of vacuum at one or plural places are detected using a vacuum gauge installed in the vacuum beam line chamber or the vacuum treatment chamber. The amount of an ion beam current is corrected using the obtained vacuum conductance and the detected degree of vacuum at one or plural places, and the dose amount implanted into the wafer is controlled.

Abstract translation: 在离子注入晶片期间，测量离子束电流，获得根据在真空束线室或真空处理室中操作的结构的位置的变化而变化的真空电导的变化，此外，改变 使用安装在真空束室或真空处理室中的真空计检测一个或多个位置的真空度。 使用获得的真空电导和一个或多个位置处的检测到的真空度来校正离子束电流的量，并且控制注入到晶片中的剂量。

公开(公告)号：US20140150723A1

公开(公告)日：2014-06-05

申请号：US14096735

申请日：2013-12-04

Applicant: SEN Corporation

Inventor： Mitsuaki Kabasawa ,  Kazuhiro Watanabe ,  Hitoshi Ando ,  Kouji Inada ,  Tatsuya Yamada

IPC: C23C14/48

CPC classification number: H01J37/32412 ,  H01J37/3007 ,  H01J37/3171 ,  H01J2237/057 ,  H01J2237/10

Abstract: An ion implantation apparatus includes: a plurality of units for accelerating an ion beam generated in an ion source; and a plurality of units for adjusting a scan beam and implanting ions into a wafer. A horizontal U-shaped folder type beamline having opposite long straight portions includes the plurality of units for adjusting the scan beam in a long straight portion to have substantially the same length as the ion source and the plurality of units for accelerating the ion beam.

Abstract translation: 离子注入装置包括：用于加速在离子源中产生的离子束的多个单元; 以及用于调整扫描光束并将离子注入晶片的多个单元。 具有相对的长直线部分的水平U形折叠型光束线包括多个单元，用于将长直线部分中的扫描光束调整为具有与离子源大致相同的长度和用于加速离子束的多个单元。

公开(公告)号：US20140374617A1

公开(公告)日：2014-12-25

申请号：US14313128

申请日：2014-06-24

Applicant: SEN CORPORATION

Inventor： Mitsuaki Kabasawa ,  Tatsuo Nishihara ,  Kazuhiro Watanabe ,  Yuuji Takahashi ,  Tatsuya Yamada

IPC: H01J3/26

CPC classification number: H01J37/05 ,  H01J37/3171 ,  H01J2237/0473 ,  H01J2237/057 ,  H01J2237/14 ,  H01J2237/15 ,  H01J2237/30472

Abstract: A high-frequency acceleration type ion acceleration and transportation apparatus is a beamline after an ion beam is accelerated by a high-frequency acceleration system having an energy spread with respect to set beam energy and includes an energy analysis deflection electromagnet and a horizontal beam focusing element. In the ion acceleration and transportation apparatus, a double slit that is configured by an energy spread confining slit and an energy analysis slit is additionally disposed at a position at which energy dispersion and a beam size are to be appropriate. The position is determined based on a condition of the energy analysis deflection electromagnet and the horizontal beam focusing element, and the double slit performs energy separation and energy definition and decreases the energy spread of the ion beam by performing adjustment for a smaller energy spread while suppressing a decrease in the amount of a beam current.

Abstract translation: 高频加速型离子加速和输送装置是通过具有相对于设定束能量的能量扩散的高频加速系统加速离子束之后的束线，并且包括能量分析偏转电磁体和水平束聚焦元件 。 在离子加速输送装置中，在能量分散和光束尺寸适当的位置处，另外设置由能量扩散限制狭缝和能量分析狭缝构成的双狭缝。 基于能量分析偏转电磁体和水平光束聚焦元件的条件确定位置，并且双缝执行能量分离和能量定义，并且通过在抑制时能够进行更小的能量扩展的调整来减小离子束的能量扩展 光束电流量的减少。

公开(公告)号：US20140366801A1

公开(公告)日：2014-12-18

申请号：US14302901

申请日：2014-06-12

Applicant: SEN CORPORATION

Inventor： Mitsuaki Kabasawa ,  Tatsuo Nishihara ,  Kazuhiro Watanabe ,  Yuuji Takahashi ,  Tatsuya Yamada

IPC: H01L21/02

CPC classification number: H01J37/3171 ,  H01J37/3007 ,  H01J2237/053 ,  H01J2237/057 ,  H01J2237/12 ,  H01J2237/14

Abstract: A high-energy ion implanter includes: a beam generation unit that includes an ion source and a mass analyzer; a high-energy multi-stage linear acceleration unit that accelerates an ion beam so as to generate a high-energy ion beam; a high-energy beam deflection unit that changes the direction of the high-energy ion beam toward the wafer; and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The deflection unit is configured by a plurality of deflection electromagnets, and at least a horizontal focusing element is inserted between the plurality of deflection electromagnets.

Abstract translation: 高能离子注入机包括：束生成单元，其包括离子源和质量分析器; 高能量多级线性加速单元，其加速离子束以产生高能离子束; 高能量束偏转单元，其将高能离子束的朝向晶片的方向改变; 以及将偏转的高能离子束输送到晶片的光束传送单元。 偏转单元由多个偏转电磁体构成，并且在多个偏转电磁体之间插入至少一个水平聚焦元件。

公开(公告)号：US20130092825A1

公开(公告)日：2013-04-18

申请号：US13653211

申请日：2012-10-16

Applicant: SEN Corporation

Inventor： Shiro NINOMIYA ,  Mitsukuni Tsukihara ,  Tetsuya Kudo ,  Tatsuya Yamada

IPC: H01L21/265

CPC classification number: H01J37/26 ,  H01J37/3023 ,  H01J37/304 ,  H01J37/317 ,  H01J37/3171 ,  H01J2237/18 ,  H01J2237/30472 ,  H01J2237/31701 ,  H01J2237/31703

Abstract: During ion implantation into a wafer, an ion beam current is measured, a change in vacuum conductance which changes in accordance with a change of the location of a structure operating in a vacuum beam line chamber or a vacuum treatment chamber is obtained, furthermore, changes in degree of vacuum at one or plural places are detected using a vacuum gauge installed in the vacuum beam line chamber or the vacuum treatment chamber. The amount of an ion beam current is corrected using the obtained vacuum conductance and the detected degree of vacuum at one or plural places, and the dose amount implanted into the wafer is controlled.

Abstract translation: 在离子注入晶片期间，测量离子束电流，获得根据在真空束线室或真空处理室中操作的结构的位置的变化而变化的真空电导的变化，此外，改变 使用安装在真空束室或真空处理室中的真空计检测一个或多个位置的真空度。 使用获得的真空电导和一个或多个位置处的检测到的真空度来校正离子束电流的量，并且控制注入到晶片中的剂量。