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公开(公告)号：US09853182B2
公开(公告)日：2017-12-26
申请号：US14467470
申请日：2014-08-25
Applicant: SEOUL VIOSYS CO., LTD. , MITSUBISHI CHEMICAL CORPORATION
Inventor： Seung Kyu Choi , Chae Hon Kim , Jung Whan Jung , Ki Bum Nam , Kenji Shimoyama , Kaori Kurihara
CPC classification number: H01L33/0025 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/32
Abstract: Disclosed herein is a light emitting diode (LED) including: a gallium nitride substrate; a gallium nitride-based first contact layer disposed on the gallium nitride substrate; a gallium nitride-based second contact layer; an active layer having a multi-quantum well structure and disposed between the first and second contact layers; and a super-lattice layer having a multilayer structure and disposed between the first contact layer and the active layer. By employing the gallium nitride substrate, the crystallinity of the semiconductor layers can be improved, and in addition, by disposing the super-lattice layer between the first contact layer and the active layer, a crystal defect that may be generated in the active layer can be prevented.
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公开(公告)号：US09362449B2
公开(公告)日：2016-06-07
申请号：US14464179
申请日：2014-08-20
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Chang Yeon Kim , Dae Sung Cho , Ki Bum Nam , Young Wug Kim , Jong Kyun You , Kenji Shimoyama , Takahide Joichi , Kaori Kurihara
CPC classification number: H01L33/20 , H01L33/0075 , H01L33/0079 , H01L33/22 , H01L33/387 , H01L33/44
Abstract: Disclosed herein are a high efficiency light emitting diode and a method of fabricating the same. The light emitting diode includes a semiconductor stacked structure disposed on the support substrate and including a gallium nitride-based p-type semiconductor layer, a gallium nitride-based active layer, and a gallium nitride-based n-type semiconductor layer; and a reflecting layer disposed between the support substrate and the semiconductor stacked structure, wherein the semiconductor stacked structure includes a plurality of protrusions having a truncated cone shape and fine cones formed on top surfaces of the protrusions. By this configuration, light extraction efficiency of the semiconductor stacked structure having low dislocation density can be improved.
Abstract translation: 本文公开了一种高效率发光二极管及其制造方法。 发光二极管包括设置在支撑基板上并包括氮化镓基p型半导体层，氮化镓基有源层和氮化镓基n型半导体层的半导体堆叠结构; 以及设置在所述支撑基板和所述半导体堆叠结构之间的反射层，其中所述半导体堆叠结构包括形成在所述突起的顶表面上的具有截头圆锥形状的多个突起和细锥。 通过这种构造，可以提高具有低位错密度的半导体层叠结构的光提取效率。
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公开(公告)号：US20140361247A1
公开(公告)日：2014-12-11
申请号：US14467470
申请日：2014-08-25
Applicant: SEOUL VIOSYS CO., LTD. , MITSUBISHI CHEMICAL CORPORATION
Inventor： Seung Kyu CHOI , Chae Hon Kim , Jung Whan Jung , Ki Bum Nam , Kenji Shimoyama , Kaori Kurihara
CPC classification number: H01L33/0025 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/32
Abstract: Disclosed herein is a light emitting diode (LED) including: a gallium nitride substrate; a gallium nitride-based first contact layer disposed on the gallium nitride substrate; a gallium nitride-based second contact layer; an active layer having a multi-quantum well structure and disposed between the first and second contact layers; and a super-lattice layer having a multilayer structure and disposed between the first contact layer and the active layer. By employing the gallium nitride substrate, the crystallinity of the semiconductor layers can be improved, and in addition, by disposing the super-lattice layer between the first contact layer and the active layer, a crystal defect that may be generated in the active layer can be prevented.
Abstract translation: 本文公开了一种发光二极管（LED），包括：氮化镓衬底; 设置在氮化镓衬底上的基于氮化镓的第一接触层; 氮化镓基第二接触层; 具有多量子阱结构并设置在第一和第二接触层之间的有源层; 以及具有多层结构并设置在第一接触层和有源层之间的超晶格层。 通过使用氮化镓衬底，可以提高半导体层的结晶度，另外通过在第一接触层和有源层之间设置超晶格层，可以在有源层中产生的晶体缺陷可以 被阻止
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