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公开(公告)号：US09508909B2
公开(公告)日：2016-11-29
申请号：US14980937
申请日：2015-12-28
Applicant: Seoul Viosys Co., Ltd.
Inventor： Tae Hyuk Im , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
IPC: H01L27/15 , H01L33/60 , H01L33/22 , H01L33/20 , H01L33/38 , H01L33/32 , H01L33/44 , H01L33/06 , H01L33/00
CPC classification number: H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
Abstract: A light-emitting diode includes a support substrate, a semiconductor stack disposed on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer and a n-type semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and having a groove exposing a portion of the semiconductor stack, a first electrode pad contacting the n-type compound semiconductor layer of the semiconductor stack, an electrode extension connected to the first electrode pad, the electrode extension disposed directly over the groove along a line perpendicular to the support substrate, an upper insulation layer disposed between the first electrode pad and the semiconductor stack. The electrode extension includes an Ni layer contacting the n-type compound semiconductor layer, and two Au layers disposed on the Ni layer.
Abstract translation: 发光二极管包括支撑衬底，设置在支撑衬底上的半导体堆叠，包括p型化合物半导体层，有源层和n型半导体层的半导体堆叠，设置在支撑体之间的反射金属层 衬底和半导体堆叠，反射金属层与半导体堆叠的p型化合物半导体层欧姆接触并且具有暴露半导体堆叠的一部分的沟槽;与n型化合物半导体层接触的第一电极焊盘 连接到所述第一电极焊盘的电极延伸部，所述电极延伸部沿着垂直于所述支撑基板的线直接设置在所述凹槽上方，所述绝缘层设置在所述第一电极焊盘和所述半导体堆叠之间。 电极延伸部包括接触n型化合物半导体层的Ni层和设置在Ni层上的两个Au层。
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公开(公告)号：US20160111613A1
公开(公告)日：2016-04-21
申请号：US14980937
申请日：2015-12-28
Applicant: Seoul Viosys Co., Ltd.
Inventor： Tae Hyuk Im , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
CPC classification number: H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
Abstract: A light-emitting diode includes a support substrate, a semiconductor stack disposed on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer and a n-type semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and having a groove exposing a portion of the semiconductor stack, a first electrode pad contacting the n-type compound semiconductor layer of the semiconductor stack, an electrode extension connected to the first electrode pad, the electrode extension disposed directly over the groove along a line perpendicular to the support substrate, an upper insulation layer disposed between the first electrode pad and the semiconductor stack. The electrode extension includes an Ni layer contacting the n-type compound semiconductor layer, and two Au layers disposed on the Ni layer.
Abstract translation: 发光二极管包括支撑衬底，设置在支撑衬底上的半导体堆叠，包括p型化合物半导体层，有源层和n型半导体层的半导体堆叠，设置在支撑体之间的反射金属层 衬底和半导体堆叠，反射金属层与半导体堆叠的p型化合物半导体层欧姆接触并且具有暴露半导体堆叠的一部分的沟槽;与n型化合物半导体层接触的第一电极焊盘 连接到所述第一电极焊盘的电极延伸部，所述电极延伸部沿着垂直于所述支撑基板的线直接设置在所述凹槽上方，所述绝缘层设置在所述第一电极焊盘和所述半导体堆叠之间。 电极延伸部包括与n型化合物半导体层接触的Ni层和设置在Ni层上的2层Au层。
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3.发明授权Method for separating epitaxial layers from growth substrates, and semiconductor device using same 有权从生长衬底分离外延层的方法和使用其的半导体器件公开(公告)号：US09263255B2
公开(公告)日：2016-02-16
申请号：US14386775
申请日：2013-03-19
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jeong Hun Heo , Joo Won Choi , Choong Min Lee , Su Jin Shin , Ki Bum Nam , Yu Dae Han , A Ram Cha Lee
CPC classification number: H01L33/24 , H01L21/0243 , H01L21/02488 , H01L21/02494 , H01L21/0254 , H01L21/02664 , H01L29/0657 , H01L33/0075 , H01L33/0079 , H01L33/0095 , H01L33/025 , H01L33/20 , H01L33/22
Abstract: The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.
Abstract translation: 本发明涉及用于分离外延层和生长衬底的方法以及使用其的半导体器件。 根据本发明，提供一种半导体器件，其包括支撑衬底和设置在支撑衬底上的多个半导体层，其中半导体层的最上层具有不均匀粗糙度的表面。
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公开(公告)号：US09716210B2
公开(公告)日：2017-07-25
申请号：US14690036
申请日：2015-04-17
Applicant: Seoul Viosys Co., Ltd.
Inventor： Kwang Joong Kim , Chang Suk Han , Kyung Hee Ye , Seung Kyu Choi , Ki Bum Nam , Nam Yoon Kim , Kyung Hae Kim , Ju Hyung Yoon
CPC classification number: H01L33/06 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/0025 , H01L33/007 , H01L33/025 , H01L33/04 , H01L33/32
Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the super lattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.
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公开(公告)号：US20140367722A1
公开(公告)日：2014-12-18
申请号：US14368268
申请日：2012-12-21
Applicant: Seoul Viosys Co., Ltd.
Inventor： Tae Hyuk Im , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
CPC classification number: H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
Abstract: Disclosed are a light-emitting diode and a method for manufacturing the same. A light-emitting diode according to one aspect of the present invention includes: a first conductive clad layer; a light-scattering pattern configured, in the first conductive clad layer, having a refractive index different from that of the first conductive clad layer; an active layer located under the first conductive clad layer; a second conductive clad layer located under the active layer; a first electrode configured to be electrically connected to the first conductive clad layer; and a second electrode configured to be electrically connected to the second conductive clad layer. The light-scattering pattern can improve light extraction efficiency.
Abstract translation: 公开了一种发光二极管及其制造方法。 根据本发明的一个方面的发光二极管包括：第一导电覆层; 在第一导电覆层中配置的折射率不同于第一导电覆层的折射率的光散射图案; 位于第一导电覆层下方的有源层; 位于有源层下方的第二导电覆层; 第一电极，被配置为电连接到所述第一导电包覆层; 以及第二电极，被配置为电连接到第二导电包覆层。 光散射图可以提高光提取效率。
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Patent Agency Ranking
公开(公告)号：US09991424B2
公开(公告)日：2018-06-05
申请号：US15355219
申请日：2016-11-18
Applicant: Seoul Viosys Co., Ltd.
Inventor： Tae Hyuk Im , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
IPC: H01L31/12 , H01L33/44 , H01L33/22 , H01L33/00 , H01L33/20 , H01L33/38 , H01L33/32 , H01L33/06 , H01L33/60 , H01L33/40
CPC classification number: H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
Abstract: A light-emitting diode including a support substrate, a semiconductor stack disposed on the support substrate and including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and including a groove exposing a portion of the semiconductor stack, an insulation layer disposed between the support substrate and the semiconductor stack and disposed in the groove, and a first electrode including a first electrode pad and a first electrode extension and contacting the n-type compound semiconductor layer of the semiconductor stack, in which the first electrode extension is connected to the first electrode pad, and the first electrode extension is formed along an outer boundary of the light-emitting diode.
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公开(公告)号：US09853182B2
公开(公告)日：2017-12-26
申请号：US14467470
申请日：2014-08-25
Applicant: SEOUL VIOSYS CO., LTD. , MITSUBISHI CHEMICAL CORPORATION
Inventor： Seung Kyu Choi , Chae Hon Kim , Jung Whan Jung , Ki Bum Nam , Kenji Shimoyama , Kaori Kurihara
CPC classification number: H01L33/0025 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/32
Abstract: Disclosed herein is a light emitting diode (LED) including: a gallium nitride substrate; a gallium nitride-based first contact layer disposed on the gallium nitride substrate; a gallium nitride-based second contact layer; an active layer having a multi-quantum well structure and disposed between the first and second contact layers; and a super-lattice layer having a multilayer structure and disposed between the first contact layer and the active layer. By employing the gallium nitride substrate, the crystallinity of the semiconductor layers can be improved, and in addition, by disposing the super-lattice layer between the first contact layer and the active layer, a crystal defect that may be generated in the active layer can be prevented.
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公开(公告)号：US20170309775A1
公开(公告)日：2017-10-26
申请号：US15643403
申请日：2017-07-06
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Kwang Joong Kim , Chang Suk Han , Kyung Hee Ye , Seung Kyu Choi , Ki Bum Nam , Nam Yoon Kim , Kyung Hae Kim , Ju Hyung Yoon
CPC classification number: H01L33/06 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/0025 , H01L33/007 , H01L33/025 , H01L33/04 , H01L33/32
Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.
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9.发明申请METHOD FOR SEPARATING EPITAXIAL LAYERS FROM GROWTH SUBSTRATES, AND SEMICONDUCTOR DEVICE USING SAME 有权用于从生长衬底分离外延层的方法和使用其的半导体器件公开(公告)号：US20160172539A1
公开(公告)日：2016-06-16
申请号：US15040969
申请日：2016-02-10
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jeong Hun Heo , Joo Won Choi , Choong Min Lee , Su Jin Shin , Ki Bum Nam , Yu Dae Han , A Ram Cha Lee
CPC classification number: H01L33/24 , H01L21/0243 , H01L21/02488 , H01L21/02494 , H01L21/0254 , H01L21/02664 , H01L29/0657 , H01L33/0075 , H01L33/0079 , H01L33/0095 , H01L33/025 , H01L33/20 , H01L33/22
Abstract: The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.
Abstract translation: 本发明涉及用于分离外延层和生长衬底的方法以及使用其的半导体器件。 根据本发明，提供一种半导体器件，其包括支撑衬底和设置在支撑衬底上的多个半导体层，其中半导体层的最上层具有不均匀粗糙度的表面。
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公开(公告)号：US09362449B2
公开(公告)日：2016-06-07
申请号：US14464179
申请日：2014-08-20
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Chang Yeon Kim , Dae Sung Cho , Ki Bum Nam , Young Wug Kim , Jong Kyun You , Kenji Shimoyama , Takahide Joichi , Kaori Kurihara
CPC classification number: H01L33/20 , H01L33/0075 , H01L33/0079 , H01L33/22 , H01L33/387 , H01L33/44
Abstract: Disclosed herein are a high efficiency light emitting diode and a method of fabricating the same. The light emitting diode includes a semiconductor stacked structure disposed on the support substrate and including a gallium nitride-based p-type semiconductor layer, a gallium nitride-based active layer, and a gallium nitride-based n-type semiconductor layer; and a reflecting layer disposed between the support substrate and the semiconductor stacked structure, wherein the semiconductor stacked structure includes a plurality of protrusions having a truncated cone shape and fine cones formed on top surfaces of the protrusions. By this configuration, light extraction efficiency of the semiconductor stacked structure having low dislocation density can be improved.
Abstract translation: 本文公开了一种高效率发光二极管及其制造方法。 发光二极管包括设置在支撑基板上并包括氮化镓基p型半导体层，氮化镓基有源层和氮化镓基n型半导体层的半导体堆叠结构; 以及设置在所述支撑基板和所述半导体堆叠结构之间的反射层，其中所述半导体堆叠结构包括形成在所述突起的顶表面上的具有截头圆锥形状的多个突起和细锥。 通过这种构造，可以提高具有低位错密度的半导体层叠结构的光提取效率。
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